IGT8994M50

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IGT8994M50 Image

The IGT8994M50 from Integra Technologies, Inc. is a RF Transistor with Frequency 8.9 to 9.4 GHz, Power 49.03 dBm, Power(W) 80 W, Duty_Cycle 10 %, Gain 10 dB. More details for IGT8994M50 can be seen below.

Product Specifications

Product Details

  • Part Number
    IGT8994M50
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    GaN-on-SiC RF power transistor for X-band Radar Systems

General Parameters

  • Transistor Type
    HEMT
  • Segment
    Satellite
  • Technology
    GaN on SiC
  • Application Industry
    Radar
  • Application Type
    X Band
  • Application
    X-Band Radar System
  • CW/Pulse
    Pulse
  • Frequency
    8.9 to 9.4 GHz
  • Power
    49.03 dBm
  • Power(W)
    80 W
  • CW Power
    80 W
  • Pulsed Width
    200 µs
  • Duty_Cycle
    10 %
  • Gain
    10 dB
  • Efficiency
    38 %
  • Input Return Loss
    5 to 18 dB
  • VSWR
    3:1
  • Supply Voltage
    50 V
  • Input Power
    8 W
  • Voltage - Drain-Source (Vdss)
    -8 to 1 V
  • Voltage - Gate-Source (Vgs)
    130 V
  • Current
    1 mA
  • Drain Current
    4.8 A
  • Impedance Zl
    50 Ohm
  • Impedance Zs
    50 Ohm
  • Junction Temperature (Tj)
    -55 to 200 Degree C
  • RoHS
    Yes
  • Grade
    Commercial, Military, Space Qualified
  • Operating Temperature
    -55 to 200 Degree C
  • Storage Temperature
    -55 to 150 Degree C

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