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Hermetically Sealed, Radiation-Hard Transistor from 0.2 to 6 mA

SKU: 4N23

RF Transistor by ISOCOM (31 more products)
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4N23 Image

The 4N23 from ISOCOM is a RF Transistor with Gain 300 dB(DC current gain), Supply Voltage 0.7 to 1.5 V(Forward Voltage), Collector Current (Ic) 0.2 to 6 mA, Power Dissipation (Pdiss) 60 to 300 mW, Input Capacitance 5 pF. Tags: Through Hole. More details for 4N23 can be seen below.

Product Specifications

Product Details

  • Part Number
    4N23
  • Manufacturer
    ISOCOM
  • Description
    Hermetically Sealed, Radiation-Hard Transistor from 0.2 to 6 mA

General Parameters

  • Transistor Type
    MOS, CMOS
  • Technology
    GaAs
  • Application Industry
    Military, Space, Medical
  • Application
    Space Radiation Equipment, Military, High Reliability System, Medical Instruments, MOS, CMOS Applications, Logic Interfacing, Data Transmission, Power Supply, Modems
  • CW/Pulse
    CW
  • Gain
    300 dB(DC current gain)
  • Collector Base Voltage
    35 to 70 V(Collector-Base Breakdown Voltage)
  • Collector Emmiter Voltage
    35 to 90 V(Collector-Emitter Breakdown Voltage)
  • Supply Voltage
    0.7 to 1.5 V(Forward Voltage)
  • Breakdown Voltage
    4 to 7 V(Emitter-Collector Breakdown Voltage)
  • Collector Current (Ic)
    0.2 to 6 mA
  • Power Dissipation (Pdiss)
    60 to 300 mW
  • Input Capacitance
    5 pF
  • Output Capacitance
    5 pF
  • Package Type
    Through Hole
  • Package
    TO-5 6-pin
  • Operating Temperature
    -65 to 125 Degree C
  • Storage Temperature
    -65 to 125 Degree C

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