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Ceramic Radiation Hard GaAs Transistor

SKU: CH301A

RF Transistor by ISOCOM (31 more products)
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The CH301A from ISOCOM is a RF Transistor with Supply Voltage 0.7 to 1.8 V(Forward Voltage), Collector Current (Ic) 100 mA, Power Dissipation (Pdiss) 150 mW, On Resistance 10 Ohms, Operating Temperature -55 to 125 Degree C. Tags: Surface Mount. More details for CH301A can be seen below.

Product Specifications

Product Details

  • Part Number
    CH301A
  • Manufacturer
    ISOCOM
  • Description
    Ceramic Radiation Hard GaAs Transistor

General Parameters

  • Transistor Type
    MOS, CMOS
  • Technology
    GaAs
  • Application Industry
    Military, Space, Medical
  • Application
    Space Radiation Equipment, Military, High Reliability System, Medical Instruments, MOS, CMOS Applications, Logic Interfacing, Data Transmission, Power Supply, Modems
  • CW/Pulse
    CW
  • Collector Base Voltage
    70 to 200 V(Collector-Base Breakdown Voltage)
  • Collector Emmiter Voltage
    70 to 100 V(Collector-Emitter Breakdown Voltage)
  • Supply Voltage
    0.7 to 1.8 V(Forward Voltage)
  • Breakdown Voltage
    7 to 9 V(Emitter-Collector Breakdown Voltage)
  • Collector Current (Ic)
    100 mA
  • Leakage Current
    7 to 100 uA
  • Power Dissipation (Pdiss)
    150 mW
  • On Resistance
    10 Ohms
  • Package Type
    Surface Mount
  • Package
    Hybrid 4-pin
  • Dimension
    3 x 3 mm
  • Operating Temperature
    -55 to 125 Degree C
  • Storage Temperature
    -65 to 150 Degree C

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