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P-Channel Silicon Field Effect Transistor

SKU: 2N2609

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2N2609 Image

The 2N2609 from Microchip Technology is a RF Transistor with Noise Figure 3 dB, Supply Voltage 30 V, Voltage - Gate-Source (Vgs) 30 V(Gate-Source Breakdown Voltage), Collector Current (Ic) 0.006 A, Base Current (Ib) -10 to -2 mA. Tags: Through Hole. More details for 2N2609 can be seen below.

Product Specifications

Product Details

  • Part Number
    2N2609
  • Manufacturer
    Microchip Technology
  • Description
    P-Channel Silicon Field Effect Transistor

General Parameters

  • Transistor Type
    FET
  • Technology
    Si
  • CW/Pulse
    CW
  • Noise Figure
    3 dB
  • Supply Voltage
    30 V
  • Voltage - Gate-Source (Vgs)
    30 V(Gate-Source Breakdown Voltage)
  • Collector Current (Ic)
    0.006 A
  • Base Current (Ib)
    -10 to -2 mA
  • Power Dissipation (Pdiss)
    300 mW
  • Input Capacitance
    10 pF
  • Package Type
    Through Hole
  • Package
    TO-18
  • RoHS
    Yes
  • Operating Temperature
    -65 to 200 Degree C

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