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P-Channel Field Effect Transistor from -0.015A to -0.6A

SKU: 2N5115

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The 2N5115 from Microchip Technology is a RF Transistor with Supply Voltage 30 V, Voltage - Drain-Source (Vdss) 3 to 6 V, Voltage - Gate-Source (Vgs) 30 V(Gate-Source Breakdown Voltage), Drain Current -60 to -15 mA, Collector Current (Ic) 0.036 A. Tags: Through Hole. More details for 2N5115 can be seen below.

Product Specifications

Product Details

  • Part Number
    2N5115
  • Manufacturer
    Microchip Technology
  • Description
    P-Channel Field Effect Transistor from -0.015A to -0.6A

General Parameters

  • Transistor Type
    FET
  • Technology
    Si
  • CW/Pulse
    CW
  • Supply Voltage
    30 V
  • Drain Gate Voltage
    30 V
  • Voltage - Drain-Source (Vdss)
    3 to 6 V
  • Voltage - Gate-Source (Vgs)
    30 V(Gate-Source Breakdown Voltage)
  • Drain Current
    -60 to -15 mA
  • Collector Current (Ic)
    0.036 A
  • Power Dissipation (Pdiss)
    0.5 W
  • Input Capacitance
    25 pF
  • On Resistance
    100 Ohms
  • Output Capacitance
    7 pF
  • Package Type
    Through Hole
  • Package
    TO-18
  • Operating Temperature
    -65 to 200 Degree C
  • Storage Temperature
    -65 to 200 Degree C

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