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P-Channel Field Effect Transistor from -0.015A to -0.6A

SKU: 2N5116UB

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The 2N5116UB from Microchip Technology is a RF Transistor with Supply Voltage 30 V, Voltage - Drain-Source (Vdss) 1 to 4 V, Voltage - Gate-Source (Vgs) 30 V(Gate-Source Breakdown Voltage), Drain Current -25 to -5 mA, Collector Current (Ic) 0.015 A. Tags: Surface Mount. More details for 2N5116UB can be seen below.

Product Specifications

Product Details

  • Part Number
    2N5116UB
  • Manufacturer
    Microchip Technology
  • Description
    P-Channel Field Effect Transistor from -0.015A to -0.6A

General Parameters

  • Transistor Type
    FET
  • Technology
    Si
  • CW/Pulse
    CW
  • Supply Voltage
    30 V
  • Drain Gate Voltage
    30 V
  • Voltage - Drain-Source (Vdss)
    1 to 4 V
  • Voltage - Gate-Source (Vgs)
    30 V(Gate-Source Breakdown Voltage)
  • Drain Current
    -25 to -5 mA
  • Collector Current (Ic)
    0.015 A
  • Power Dissipation (Pdiss)
    0.5 W
  • Input Capacitance
    27 pF
  • On Resistance
    175 Ohms
  • Output Capacitance
    7 pF
  • Package Type
    Surface Mount
  • Package
    UB
  • Operating Temperature
    -65 to 200 Degree C
  • Storage Temperature
    -65 to 200 Degree C

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