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300 krad 100V N-Channel Radiation Hardened MOSFET

SKU: MRH10N22U3SF

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The MRH10N22U3SF from Microchip Technology is a RF Transistor with Duty_Cycle 2%, Breakdown Voltage - Drain-Source 100 V, Voltage - Drain-Source (Vdss) 100 V, Voltage - Gate-Source (Vgs) ±20 V, Drain Current 19 to 22 A. Tags: Surface Mount. More details for MRH10N22U3SF can be seen below.

Product Specifications

Product Details

  • Part Number
    MRH10N22U3SF
  • Manufacturer
    Microchip Technology
  • Description
    300 krad 100V N-Channel Radiation Hardened MOSFET

General Parameters

  • Transistor Type
    MOSFET
  • Application Industry
    Space, Military
  • Application
    DC–DC Converters, Motor Control, Switch Mode Power Supplies
  • CW/Pulse
    Pulse
  • Duty_Cycle
    2%
  • Transconductance
    14 s
  • Threshold Voltage
    2 to 4 V (Gate)
  • Breakdown Voltage - Drain-Source
    100 V
  • Voltage - Drain-Source (Vdss)
    100 V
  • Voltage - Gate-Source (Vgs)
    ±20 V
  • Drain Current
    19 to 22 A
  • Gate Leakage Current (Ig)
    ±100 nA (Gate to Source)
  • Power Dissipation (Pdiss)
    75 W
  • Input Capacitance
    1948 pF
  • On Resistance
    42 mOhms (Drain-Source)
  • Output Capacitance
    465 pF
  • Thermal Resistance
    0.56 to 1.67 Degree C/W
  • Package Type
    Surface Mount
  • Package
    Ceramic
  • Grade
    Space Qualified
  • Operating Temperature
    -55 to 150 Degree C

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