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26 GHz Super Low Noise pHEMT Device

SKU: MwT-LN240

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The MwT-LN240 from MicroWave Technology is a RF Transistor with Frequency DC to 12 GHz, P1dB 16 dBm, Small Signal Gain 10 to 13 dB, Noise Figure 0.2 to 0.5 dB, Input Power 16 to 30 mW. Tags: Surface Mount. More details for MwT-LN240 can be seen below.

Product Specifications

Product Details

  • Part Number
    MwT-LN240
  • Manufacturer
    MicroWave Technology
  • Description
    26 GHz Super Low Noise pHEMT Device

General Parameters

  • Transistor Type
    pHEMT
  • CW/Pulse
    CW
  • Frequency
    DC to 12 GHz
  • P1dB
    16 dBm
  • Small Signal Gain
    10 to 13 dB
  • Noise Figure
    0.2 to 0.5 dB
  • Transconductance
    140 to 180 mS
  • Input Power
    16 to 30 mW
  • Drain Gate Voltage
    -9 to -7.5 V (Breakdown)
  • Voltage - Drain-Source (Vdss)
    4 to 4.5 V
  • Voltage - Gate-Source (Vgs)
    -8 to -6 V (Breakdown)
  • Drain Current
    110 mA (Saturated)
  • Power Dissipation (Pdiss)
    300 to 400 mW
  • Voltage Rating
    -0.2 V (Pinch-off)
  • Thermal Resistance
    300 Degrees C/W
  • Package Type
    Surface Mount
  • Package
    Chip
  • Dimension
    410 x 430 um
  • Grade
    Commercial, Military, Space Qualified
  • Storage Temperature
    -65 to 160 Degree C

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