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Rad-Hard 50 V, 0.8 A NPN Transistor

SKU: 2N2222ARUBx

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The 2N2222ARUBx from STMicroelectronics is a RF Transistor with Duty_Cycle 0.015, Gain 35 to 300 dB(DC Current Gain), Small Signal Gain 2.5 dB, Voltage - Collector Base (Vcbo) 75 V, Voltage - Collector Emitter (Vceo) 50 V. Tags: Surface Mount. More details for 2N2222ARUBx can be seen below.

Product Specifications

Product Details

  • Part Number
    2N2222ARUBx
  • Manufacturer
    STMicroelectronics
  • Description
    Rad-Hard 50 V, 0.8 A NPN Transistor

General Parameters

  • Transistor Type
    Bipolar
  • Technology
    NPN
  • CW/Pulse
    CW, Pulse
  • Pulsed Width
    300 µs
  • Duty_Cycle
    0.015
  • Gain
    35 to 300 dB(DC Current Gain)
  • Small Signal Gain
    2.5 dB
  • Voltage - Collector Base (Vcbo)
    75 V
  • Voltage - Collector Emitter (Vceo)
    50 V
  • Voltage - Emitter Base
    6 V
  • Current
    150 mA
  • Collector Current (Ic)
    0.8 A
  • Base Current (Ib)
    10 nA(Emitter-base cut-off current)
  • Leakage Current
    0.8 A
  • Power Dissipation (Pdiss)
    0.5 to 0.73 W
  • Output Capacitance
    8 pF
  • Thermal Resistance
    240 to 350 Degree C/W
  • Package Type
    Surface Mount
  • Package
    UB
  • Dimension
    15 x 15 x 0.6 mm
  • Operating Temperature
    -65 to 200 Degree C
  • Note
    Collector-base cut-off current : 10 uA to 10 nA, Radiation : 100 krad

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