Rad-Hard 60 V, 0.6 A PNP Transistor

SKU: 2N2907AHR

Note : Your request will be directed to STMicroelectronics.

2N2907AHR Image

The 2N2907AHR from STMicroelectronics is a RF Transistor with Duty_Cycle 0.015, Gain 75 to 300 dB (DC Current Gain), Small Signal Gain 3 dB, Voltage - Collector Base (Vcbo) 60 V, Voltage - Collector Emitter (Vceo) 60 V. Tags: Surface Mount. More details for 2N2907AHR can be seen below.

Product Specifications

Product Details

  • Part Number
    2N2907AHR
  • Manufacturer
    STMicroelectronics
  • Description
    Rad-Hard 60 V, 0.6 A PNP Transistor

General Parameters

  • Transistor Type
    Bipolar
  • Technology
    PNP
  • CW/Pulse
    CW, Pulse
  • Pulsed Width
    300 µs
  • Duty_Cycle
    0.015
  • Gain
    75 to 300 dB (DC Current Gain)
  • Small Signal Gain
    3 dB
  • Voltage - Collector Base (Vcbo)
    60 V
  • Voltage - Collector Emitter (Vceo)
    60 V
  • Voltage - Emitter Base
    -5 V
  • Current
    150 mA
  • Collector Current (Ic)
    0.5 A
  • Base Current (Ib)
    50 nA(Emitter-base cut-off current)
  • Leakage Current
    0.5 A
  • Power Dissipation (Pdiss)
    0.4 to 0.73 W
  • Output Capacitance
    8 pF
  • Thermal Resistance
    240 to 437.5 Degree C/W
  • Package Type
    Surface Mount
  • Package
    LCC-3, UB
  • Dimension
    15 x 15 x 0.6 mm
  • Operating Temperature
    -65 to 200 Degree C
  • Note
    Collector-base cut-off current : 10 uA to 10 nA, Radiation : 100 krad

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