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Rad-Hard 80 V, 1 A NPN Transistor

SKU: 2N3700HR

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The 2N3700HR from STMicroelectronics is a RF Transistor with Duty_Cycle 0.02, Gain 40 to 300 dB(DC Current Gain), Small Signal Gain 5 dB, Voltage - Collector Base (Vcbo) 140 V, Voltage - Collector Emitter (Vceo) 80 V. Tags: Surface Mount. More details for 2N3700HR can be seen below.

Product Specifications

Product Details

  • Part Number
    2N3700HR
  • Manufacturer
    STMicroelectronics
  • Description
    Rad-Hard 80 V, 1 A NPN Transistor

General Parameters

  • Transistor Type
    Bipolar
  • Technology
    NPN
  • CW/Pulse
    CW, Pulse
  • Pulsed Width
    300 µs
  • Duty_Cycle
    0.02
  • Gain
    40 to 300 dB(DC Current Gain)
  • Small Signal Gain
    5 dB
  • Voltage - Collector Base (Vcbo)
    140 V
  • Voltage - Collector Emitter (Vceo)
    80 V
  • Voltage - Emitter Base
    7 V
  • Current
    150 mA
  • Collector Current (Ic)
    1 A
  • Base Current (Ib)
    10 nA(Emitter-base cut-off current)
  • Leakage Current
    1 A
  • Power Dissipation (Pdiss)
    0.5 to 0.76 W
  • Input Capacitance
    60 pF
  • Output Capacitance
    12 pF
  • Thermal Resistance
    230 to 350 Degree C/W
  • Package Type
    Surface Mount
  • Package
    LCC-3, UB
  • Dimension
    15 x 15 x 0.6 mm
  • Operating Temperature
    -65 to 200 Degree C
  • Note
    Collector-base cut-off current : 10 uA to 10 nA, Radiation : 100 krad

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