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Rad-Hard 80 V, 5 A PNP bipolar Transistor

SKU: 2N5153RESYHRx

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The 2N5153RESYHRx from STMicroelectronics is a RF Transistor with Duty_Cycle 0.02, Gain 35 to 200 dB(DC Current Gain), Voltage - Collector Base (Vcbo) 100 V, Voltage - Collector Emitter (Vceo) 80 V, Voltage - Emitter Base 5 V. Tags: Through Hole. More details for 2N5153RESYHRx can be seen below.

Product Specifications

Product Details

  • Part Number
    2N5153RESYHRx
  • Manufacturer
    STMicroelectronics
  • Description
    Rad-Hard 80 V, 5 A PNP bipolar Transistor

General Parameters

  • Transistor Type
    Bipolar
  • Technology
    PNP
  • CW/Pulse
    CW, Pulse
  • Pulsed Width
    300 µs
  • Duty_Cycle
    0.02
  • Gain
    35 to 200 dB(DC Current Gain)
  • Voltage - Collector Base (Vcbo)
    100 V
  • Voltage - Collector Emitter (Vceo)
    80 V
  • Voltage - Emitter Base
    5 V
  • Current
    2.5 A
  • Collector Current (Ic)
    5 A
  • Leakage Current
    5 A
  • Power Dissipation (Pdiss)
    3.3 to 35 W
  • Output Capacitance
    250 pF
  • Thermal Resistance
    5 to 53 Degree C/W
  • Package Type
    Through Hole
  • Package
    TO-257
  • Operating Temperature
    -65 to 200 Degree C
  • Note
    Collector cut-off current : 1 to 10 uA, Emitter cut-off current : 1 uA to 1 mA, 100 krad ESCC LDR

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