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Rad-Hard 160 V, 0.5 A NPN bipolar Transistor

SKU: 2N5551HR

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The 2N5551HR from STMicroelectronics is a RF Transistor with Duty_Cycle 0.015, Gain 20 to 250 dB(DC Current Gain), Voltage - Collector Base (Vcbo) 180 V, Voltage - Collector Emitter (Vceo) 160 V, Voltage - Emitter Base 6 V. Tags: Surface Mount. More details for 2N5551HR can be seen below.

Product Specifications

Product Details

  • Part Number
    2N5551HR
  • Manufacturer
    STMicroelectronics
  • Description
    Rad-Hard 160 V, 0.5 A NPN bipolar Transistor

General Parameters

  • Transistor Type
    Bipolar
  • Technology
    NPN
  • CW/Pulse
    CW, Pulse
  • Pulsed Width
    300 µs
  • Duty_Cycle
    0.015
  • Gain
    20 to 250 dB(DC Current Gain)
  • Voltage - Collector Base (Vcbo)
    180 V
  • Voltage - Collector Emitter (Vceo)
    160 V
  • Voltage - Emitter Base
    6 V
  • Current
    10 mA
  • Collector Current (Ic)
    0.5 A
  • Base Current (Ib)
    50
  • Leakage Current
    0.5 A
  • Power Dissipation (Pdiss)
    0.36 to 0.58 W
  • Input Capacitance
    20 pF
  • Output Capacitance
    6 pF
  • Thermal Resistance
    302 Degree C/W
  • Package Type
    Surface Mount
  • Package
    LCC-3, UB
  • Dimension
    15 x 15 x 0.6 mm
  • Operating Temperature
    -65 to 200 Degree C
  • Note
    Collector-base cut-off current : 50 uA to 50 nA, Radiation : 100 krad

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