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650 V Enhancement Mode GaN Silicon Power Transistor

SKU: TDG650E602TSP

RF Transistor by Teledyne Defense Electronics
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The TDG650E602TSP from Teledyne Defense Electronics is a RF Transistor with Voltage - Drain-Source (Vdss) 650 V, Voltage - Gate-Source (Vgs) -10 to 7 V, Drain Current 47 to 60 A, Drain Leakage Current (Id) 1.2 to 800 uA (Drain-Source), Input Capacitance 518 pF. Tags: Surface Mount. More details for TDG650E602TSP can be seen below.

Product Specifications

Product Details

  • Part Number
    TDG650E602TSP
  • Manufacturer
    Teledyne Defense Electronics
  • Description
    650 V Enhancement Mode GaN Silicon Power Transistor

General Parameters

  • Technology
    GaN on SiC
  • Application
    Battery management, Traction Drive, dc-dc Converters, Space Motor Drives, Bridgeless Totem Pole PFC
  • CW/Pulse
    Pulse
  • Threshold Voltage
    1.1 to 2.6 V (Gate to Source)
  • Voltage - Drain-Source (Vdss)
    650 V
  • Voltage - Gate-Source (Vgs)
    -10 to 7 V
  • Drain Current
    47 to 60 A
  • Drain Leakage Current (Id)
    1.2 to 800 uA (Drain-Source)
  • Input Capacitance
    518 pF
  • On Resistance
    11 to 60 mOhms (Drain-Source)
  • Output Capacitance
    126 pF
  • Thermal Resistance
    0.27 Degree C/W
  • Package Type
    Surface Mount
  • Dimension
    9 x 7.6 mm
  • Grade
    Space Qualified
  • Operating Temperature
    -55 to 150 Degree C
  • Storage Temperature
    -55 to 150 Degree C

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