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15 W GaN on SiC HEMT

SKU: CHK8101-SYC

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The CHK8101-SYC from United Monolithic Semiconductors is a RF Transistor with Frequency 1000 to 6000 MHz, Power 41.76 dBm, Power(W) 15 W, Saturated Power 20 W, Duty_Cycle 10%. Tags: Flanged. More details for CHK8101-SYC can be seen below.

Product Specifications

Product Details

  • Part Number
    CHK8101-SYC
  • Manufacturer
    United Monolithic Semiconductors
  • Description
    15 W GaN on SiC HEMT

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Aerospace & Defence
  • Application
    general purpose, broadband, multipurpose, space, telecommunication
  • CW/Pulse
    CW, Pulse
  • Frequency
    1000 to 6000 MHz
  • Power
    41.76 dBm
  • Power(W)
    15 W
  • Saturated Power
    20 W
  • Duty_Cycle
    10%
  • Gain
    19 dB
  • Small Signal Gain
    19 dB
  • Power Added Effeciency
    65 %
  • Efficiency
    65 %
  • Supply Voltage
    50 V
  • Breakdown Voltage - Drain-Source
    180 V
  • Voltage - Drain-Source (Vdss)
    50 V
  • Current
    100 mA
  • Drain Current
    0.7 A
  • Drain Bias Current
    100 mA
  • Quiescent Drain Current
    0.1 A
  • Gate Leakage Current (Ig)
    0.4 mA
  • Leakage Current
    -0.4 mA (Gate Leakage Current)
  • Power Dissipation (Pdiss)
    14 W
  • Thermal Resistance
    5.8 Degree
  • Package Type
    Flanged
  • Package
    Hermatical Sealed Cearmic Package
  • RoHS
    Yes
  • Grade
    Space Qualified
  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -55 to 150 Degree C

Technical Documents
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