45W GaN High Electron Mobility Transistor

SKU: CHK8201-SYA

Note : Your request will be directed to United Monolithic Semiconductors.

CHK8201-SYA Image

The CHK8201-SYA from United Monolithic Semiconductors is an RF Transistor with an operating frequency of up to 4 GHz. This transistor has a small signal gain of 22 dB and a saturated output power of 45 W. It requires a DC bias voltage of 50 V and has a quiescent drain current of 200-640 mA. The CHK8101-SYC is developed on a 0.5µm gate length GaN on the SiC HEMT process and comes in a hermetic ceramic-metal flange power package. It offers general-purpose and broadband solutions for a variety of RF power applications and is well-suited for multi-purpose applications such as space and telecommunication.

Product Specifications

Product Details

  • Part Number
    CHK8201-SYA
  • Manufacturer
    United Monolithic Semiconductors
  • Description
    45W GaN High Electron Mobility Transistor

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Aerospace & Defence, Radar
  • Application
    Radar, telecommunication, Space
  • CW/Pulse
    CW, Pulse
  • Frequency
    1000 to 4000 MHz
  • Power
    46.53 dBm
  • Power(W)
    45 W
  • Saturated Power
    45 W
  • Gain
    22 dB
  • Small Signal Gain
    22 dB
  • Power Added Effeciency
    55 %
  • Efficiency
    55 %
  • Supply Voltage
    50 V
  • Input Power
    29 dBm
  • Voltage - Drain-Source (Vdss)
    50 to 60 V
  • Voltage - Gate-Source (Vgs)
    -10 to 2 V
  • Current
    200 to 640 mA
  • Drain Current
    1.8 A
  • Drain Bias Current
    200 mA
  • Quiescent Drain Current
    200 to 640 mA
  • Gate Leakage Current (Ig)
    -4 to 64 mA
  • Power Dissipation (Pdiss)
    35 W
  • Thermal Resistance
    3 Degree
  • Package Type
    Flanged
  • Package
    Hermatical Sealed Cearmic Package
  • RoHS
    Yes
  • Grade
    Space Qualified
  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -55 to 150 Degree C

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