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GaN on SiC HEMT in Ceramic-Metal Flange Package

SKU: CHKA012bSYA

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The CHKA012bSYA from United Monolithic Semiconductors is a RF Transistor with Frequency 1000 to 6000 MHz, Power 51.14 dBm, Power(W) 130 W, Saturated Power 90 to 130 W, Gain 19 dB. Tags: Flanged. More details for CHKA012bSYA can be seen below.

Product Specifications

Product Details

  • Part Number
    CHKA012bSYA
  • Manufacturer
    United Monolithic Semiconductors
  • Description
    GaN on SiC HEMT in Ceramic-Metal Flange Package

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Aerospace & Defence, Radar
  • Application
    multi-purpose, radar, telecommunication
  • CW/Pulse
    CW, Pulse
  • Frequency
    1000 to 6000 MHz
  • Power
    51.14 dBm
  • Power(W)
    130 W
  • Saturated Power
    90 to 130 W
  • Gain
    19 dB
  • Small Signal Gain
    19 dB
  • Power Added Effeciency
    58 %
  • Efficiency
    58 %
  • Supply Voltage
    50 to 60 V
  • Voltage - Drain-Source (Vdss)
    50 to 60 V
  • Voltage - Gate-Source (Vgs)
    -10 to 2 V
  • Current
    200 mA
  • Drain Current
    0.64 to 2.05 A
  • Drain Bias Current
    3.9 A
  • Quiescent Drain Current
    0.64 to 2.05 A
  • Gate Leakage Current (Ig)
    -13 to 200 mA
  • Power Dissipation (Pdiss)
    82.7 W
  • Thermal Resistance
    1.25 Degree
  • Package Type
    Flanged
  • Package
    Hermatical Sealed Cearmic Package
  • RoHS
    Yes
  • Grade
    Space Qualified
  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -55 to 150 Degree C

Technical Documents
View details on the manufacturer's website
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