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130W Packaged Power Transistor

SKU: CHKA012bSYA

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The CHKA012bSYA from United Monolithic Semiconductors is a RF Transistor with Frequency DC to 6 GHz, Gain 16 dB, Small Signal Gain 19 dB, Power Added Effeciency 58%, Drain Current 3.9 A (Saturated). Tags: Surface Mount. More details for CHKA012bSYA can be seen below.

Product Specifications

Product Details

  • Part Number
    CHKA012bSYA
  • Manufacturer
    United Monolithic Semiconductors
  • Description
    130W Packaged Power Transistor

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Radar
  • Application
    Telecommunications
  • CW/Pulse
    CW, Pulse
  • Frequency
    DC to 6 GHz
  • Gain
    16 dB
  • Small Signal Gain
    19 dB
  • Power Added Effeciency
    58%
  • Drain Current
    3.9 A (Saturated)
  • Quiescent Drain Current
    0.64 to 2.05 A
  • Junction Temperature (Tj)
    200 Degree C
  • Thermal Resistance
    1.26 Degrees C/W
  • Package Type
    Surface Mount
  • Package
    SMD
  • RoHS
    Yes
  • Grade
    Space Qualified
  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -55 to 150 Degree C

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