1. Home
  2. Electrical / Electronic Components
  3. GaN Power Transistors
Filters

GaN Power Transistors for Space Applications - Efficient Power Conversion

9 GaN Power Transistors from Efficient Power Conversion meet your specification.

GaN Power Transistors from Efficient Power Conversion are listed on SatNow. We have compiled a list of GaN Power Transistors from the Efficient Power Conversion website/catalog and made their products searchable by specification. Use the filters to narrow down on products based on your requirements. Download datasheets and request quotes for products that you find interesting. Your inquiry will be directed to Efficient Power Conversion and their distributors in your region.

Selected Filters Reset All
  • Manufacturers: Efficient Power Conversion
 Download Datasheet  Request Information  Product Details

40V, 62 A Rad Hard Enhancement Mode GaN Transistor

GaN Power Transistor from Efficient Power Conversion
 Download Datasheet  Request Information
SKU:EPC7002
Segment:
Satellite
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
40 V
Drain Source Resistance:
8.5 to 14.5 mOhms
Continous Drain Current:
10 A
Pulsed Drain Current:
62 A
Total Charge:
2.9 nC
Input Capacitance:
349 pF
Output Capacitance:
201 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Die
Dimensions:
1.7 x 1.1 mm
more info
 Download Datasheet  Request Information  Product Details

40V, 250 A Rad Hard Enhancement Mode GaN Transistor

GaN Power Transistor from Efficient Power Conversion
 Download Datasheet  Request Information
SKU:EPC7001
Segment:
Satellite
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
40 V
Drain Source Resistance:
2.1 to 4 mOhms
Continous Drain Current:
60 A
Pulsed Drain Current:
250 A
Total Charge:
11 nC
Input Capacitance:
1342 pF
Output Capacitance:
792 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Die
Dimensions:
4.1 x 1.6 mm
more info
 Download Datasheet  Request Information  Product Details

100V, 42 A Rad Hard Enhancement Mode GaN Transistor

GaN Power Transistor from Efficient Power Conversion
 Download Datasheet  Request Information
SKU:EPC7003
Segment:
Satellite
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
18 to 30 mOhms
Continous Drain Current:
10 A
Pulsed Drain Current:
42 A
Total Charge:
1.8 to 2.5 nC
Input Capacitance:
230 to 313 pF
Output Capacitance:
119 to 143 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Die
Dimensions:
1.7 x 1.1 mm
more info
 Download Datasheet  Request Information  Product Details

100V Rad Hard Enhancement Mode Power Transistor

GaN Power Transistor from Efficient Power Conversion
 Download Datasheet  Request Information
SKU:EPC7004
Segment:
Satellite
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
5 to 7 mOhms
Continous Drain Current:
60 A
Pulsed Drain Current:
160 A
Total Charge:
6.4 nC
Input Capacitance:
817 pF
Output Capacitance:
485 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Die
Dimensions:
4.1 x 1.6 mm
more info
 Download Datasheet  Request Information  Product Details

Rad Hard Enhancement Mode Power Transistor

GaN Power Transistor from Efficient Power Conversion
 Download Datasheet  Request Information
SKU:EPC7018
Segment:
Satellite
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
2.7 to 3.9 mOhms
Continous Drain Current:
90 A
Pulsed Drain Current:
345 A
Total Charge:
15.2 nC
Input Capacitance:
1828 pF
Output Capacitance:
1025 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Die
Dimensions:
6.05 x 2.3 mm
more info
 Download Datasheet  Request Information  Product Details

200V Rad Hard Enhancement Mode Power Transistor

GaN Power Transistor from Efficient Power Conversion
 Download Datasheet  Request Information
SKU:EPC7007
Segment:
Satellite
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
200 V
Drain Source Resistance:
17 to 25 mOhms
Continous Drain Current:
20 A
Pulsed Drain Current:
80 A
Total Charge:
5.4 nC
Input Capacitance:
525 pF
Output Capacitance:
256 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Die
Dimensions:
3.6 x 1.6 mm
more info
 Download Datasheet  Request Information  Product Details

200V, 170 A Rad Hard Enhancement Mode GaN Transistor

GaN Power Transistor from Efficient Power Conversion
 Download Datasheet  Request Information
SKU:EPC7020
Segment:
Satellite
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
200 V
Drain Source Resistance:
8 to 11 mOhms
Continous Drain Current:
39 A
Pulsed Drain Current:
170 A
Total Charge:
11.7 nC
Input Capacitance:
1137 pF
Output Capacitance:
494 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Die
Dimensions:
4.6 x 2.6 mm
more info
EPC7014 Image
 Download Datasheet  Request Information  Product Details

60 V Rad Hard GaN Power Transistor for Deep Space Probes

GaN Power Transistor from Efficient Power Conversion
 Download Datasheet  Request Information
SKU:EPC7014
Segment:
Satellite
Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
60 to 72 V
Drain Source Resistance:
240 to 340 milli-ohm
Continous Drain Current:
2.4 A
Pulsed Drain Current:
4 A
Total Charge:
142 to 184 nC
Input Capacitance:
16 to 22 pF
Output Capacitance:
17 to 26 pF
Temperature operating range:
-55 to 125 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
BGA
Dimensions:
0.9 x 0.9 mm
more info
EPC7019 Image
 Download Datasheet  Request Information  Product Details

Rad Hard GaN Power Transistor for Deep Space Applications

GaN Power Transistor from Efficient Power Conversion
 Download Datasheet  Request Information
SKU:EPC7019
Segment:
Satellite
Gate Threshold Voltage:
800 to 2500 mV
Drain Source Voltage:
40 V
Drain Source Resistance:
1.2 to 1.5 milli-ohm
Continous Drain Current:
95 A
Pulsed Drain Current:
530 A
Total Charge:
22 nC
Input Capacitance:
2830 pF
Output Capacitance:
1660 pF
Temperature operating range:
-55 to 150 degree C
Package Type:
Die
Dimensions:
6.05 x 2.3 mm
more info
Have a Custom Requirement?

FiltersReset All

Segment

Manufacturers

Configuration

Gate Threshold Voltage (V)

Apply

Drain Source Voltage (V)

Apply

Drain Source Resistance (milli-ohm)

Apply

Continous Drain Current (A)

Apply

Pulsed Drain Current (A)

Apply

Total Charge (nC)

Apply

Qualification

RoHS Compliant

Package Type

GaN Transistors Directory