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Space Qualified Dual GaN Power Transistor

1 Space Qualified Dual GaN Power Transistor from 1 Manufacturer meet your specification.

Space Qualified Dual GaN Power Transistor from multiple manufacturers are listed on SATNow. Use the filters to select products based on your requirement. View product details, download datasheets, compare products, get quotes and pricing for matching products. SATNow has compiled this list of products specifically for Space and Satellite Applications.

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  • Configuration: Dual
EPC7019G Image
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40 V eGaN HEMT for Commercial Satellite Applications

Space Qualified Dual GaN Power Transistor from EPC Space
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SKU:EPC7019G
Segment:
Satellite
Configuration:
Dual
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
40 V
Drain Source Resistance:
3.7 milliohm
Continous Drain Current:
95 A
Pulsed Drain Current:
530 A
Total Charge:
22 nC
Input Capacitance:
2830 pF
Output Capacitance:
1660 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Surface Mount
Dimensions:
8.0 x 5.6 mm
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Pulsed Drain Current (A)

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Qualification

RoHS Compliant

Package Type

GaN Transistors Directory