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Space Qualified Surface Mount Power GaN Transistors

16 Space Qualified Surface Mount Power GaN Transistors from 3 Manufacturers meet your specification.

Space Qualified Surface Mount Power GaN Transistors from multiple manufacturers are listed on SATNow. Use the filters to select products based on your requirement. View product details, download datasheets, compare products, get quotes and pricing for matching products. SATNow has compiled this list of products specifically for Space and Satellite Applications.

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  • Package Type: Surface Mount
ISL70020SEH Image
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Renesas - ISL70020SEH

Space Qualified Surface Mount Power GaN Transistor from Renesas
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Description:65 A Enhancement Mode GaN Power Transistor for Commercial Aerospace Applications
Segment:
Ground
Configuration:
Single
Gate Threshold Voltage:
0.7 to 2.5 V
Drain Source Voltage:
40 V
Drain Source Resistance:
1.2 to 8 milli-ohm
Continous Drain Current:
65 A
Total Charge:
19 to 25 nC
Input Capacitance:
1920 pF
Output Capacitance:
1620 to 2430 pF
Temperature operating range:
-55 to 125 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Dimensions:
6050µm x 2300µm (238.19 mils x 90.55 mils) Thickness: 685µm (26.97 mils)
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ISL73020SEH Image
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40 V Enhancement Mode GaN Power Transistor

Space Qualified Surface Mount Power GaN Transistor from Renesas
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SKU:ISL73020SEH
Segment:
Ground
Configuration:
Single
Gate Threshold Voltage:
0.7 to 2.5 V
Drain Source Voltage:
40 V
Drain Source Resistance:
1.2 to 8 milli-ohm
Continous Drain Current:
65 A
Total Charge:
19 to 25 nC
Input Capacitance:
1920 pF
Output Capacitance:
1620 to 2430 pF
Temperature operating range:
-55 to 125 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Dimensions:
6050µm x 2300µm (238.19 mils x 90.55 mils) Thickness: 685µm (26.97 mils)
more info
ISL70023SEH Image
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100 V Enhancement Mode GaN Power Transistor

Space Qualified Surface Mount Power GaN Transistor from Renesas
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SKU:ISL70023SEH
Segment:
Ground
Configuration:
Single
Gate Threshold Voltage:
0.7 to 3 V
Drain Source Voltage:
100 V
Drain Source Resistance:
5 to 12 milli-ohm
Continous Drain Current:
60 A
Total Charge:
14 to 25 nC
Input Capacitance:
1500 pF
Output Capacitance:
960 to 1250 pF
Temperature operating range:
-55 to 125 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Dimensions:
6050µm x 2300µm (238.19 mils x 90.55 mils) Thickness: 685µm (26.97 mils)
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100V, 60A Enhancement Mode GaN Power Transistor

Space Qualified Surface Mount Power GaN Transistor from Renesas
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SKU:ISL73023SEH
Segment:
Ground
Configuration:
Single
Gate Threshold Voltage:
0.7 to 3 V
Drain Source Voltage:
100 V
Drain Source Resistance:
5 to 12 milli-ohm
Continous Drain Current:
60 A
Total Charge:
14 to 25 nC
Input Capacitance:
1500 pF
Output Capacitance:
960 to 1250 pF
Temperature operating range:
-55 to 125 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Dimensions:
6050µm x 2300µm (238.19 mils x 90.55 mils) Thickness: 685µm (26.97 mils)
more info
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200V, 7.5A Enhancement Mode GaN Power Transistor

Space Qualified Surface Mount Power GaN Transistor from Renesas
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SKU:SL70024SEH
Segment:
Ground
Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
200 V
Drain Source Resistance:
45 to 110 milli-ohm
Continous Drain Current:
7.5 A
Total Charge:
2.5 to 5 nC
Input Capacitance:
270 pF
Output Capacitance:
150 to 200 pF
Temperature operating range:
-55 to 125 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Dimensions:
2766µm x 950µm (108.90 mils x 37.40 mils) Thickness: 685µm (26.97 mils)
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200V, 7.5A Enhancement Mode GaN Power Transistor

Space Qualified Surface Mount Power GaN Transistor from Renesas
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SKU:ISL73024SEH
Segment:
Ground
Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
200 V
Drain Source Resistance:
45 to 110 milli-ohm
Continous Drain Current:
7.5 A
Total Charge:
2.5 to 5 nC
Input Capacitance:
270 pF
Output Capacitance:
150 to 200 pF
Temperature operating range:
-55 to 125 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Dimensions:
2766µm x 950µm (108.90 mils x 37.40 mils) Thickness: 685µm (26.97 mils)
more info
EPC7014 Image
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60 V Rad Hard GaN Power Transistor for Deep Space Probes

Space Qualified Surface Mount Power GaN Transistor from Efficient Power Conversion
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SKU:EPC7014
Segment:
Satellite
Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
60 to 72 V
Drain Source Resistance:
240 to 340 milli-ohm
Continous Drain Current:
2.4 A
Pulsed Drain Current:
4 A
Total Charge:
142 to 184 nC
Input Capacitance:
16 to 22 pF
Output Capacitance:
17 to 26 pF
Temperature operating range:
-55 to 125 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
BGA
Dimensions:
0.9 x 0.9 mm
more info
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40 V, 8 A, GaN Power Transistor

Space Qualified Surface Mount Power GaN Transistor from EPC Space
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SKU:FBG04N08A
Segment:
Satellite
Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
40 V
Drain Source Resistance:
24 to 28 milli-ohm
Continous Drain Current:
8 A
Pulsed Drain Current:
32 A
Total Charge:
2.2 to 2.8 nC
Input Capacitance:
283 to 312 pF
Output Capacitance:
170 to 270 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Surface Mount
Dimensions:
3.4 x 3.4 mm
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FBG04N30B Image
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Radiation Hardened eGaN HEMT for Satellites and Deep Space Probes

Space Qualified Surface Mount Power GaN Transistor from EPC Space
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SKU:FBG04N30B
Segment:
Satellite
Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
40 V
Drain Source Resistance:
5 to 8.5 milli-ohm
Continous Drain Current:
30 A
Pulsed Drain Current:
120 A
Total Charge:
8.9 to 11.4 nC
Input Capacitance:
1100 to 1300 pF
Output Capacitance:
650 to 900 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Surface Mount
Dimensions:
5.7 x 3.9 mm
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EPC7019G Image
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40 V eGaN HEMT for Commercial Satellite Applications

Space Qualified Surface Mount Power GaN Transistor from EPC Space
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SKU:EPC7019G
Segment:
Satellite
Configuration:
Dual
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
40 V
Drain Source Resistance:
3.7 milliohm
Continous Drain Current:
95 A
Pulsed Drain Current:
530 A
Total Charge:
22 nC
Input Capacitance:
2830 pF
Output Capacitance:
1660 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Surface Mount
Dimensions:
8.0 x 5.6 mm
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