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Space Qualified GaN Power Transistors

11 Space Qualified GaN Power Transistors from 2 Manufacturers meet your specification.

Space Qualified GaN Power Transistors from multiple manufacturers are listed on SATNow. Use the filters to select products based on your requirement. View product details, download datasheets, compare products, get quotes and pricing for matching products. SATNow has compiled this list of products specifically for Space and Satellite Applications.

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  • Segment: Satellite
EPC7014 Image
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60 V Rad Hard GaN Power Transistor for Deep Space Probes

Space Qualified GaN Power Transistor from Efficient Power Conversion
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SKU:EPC7014
Segment:
Satellite
Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
60 to 72 V
Drain Source Resistance:
240 to 340 milli-ohm
Continous Drain Current:
2.4 A
Pulsed Drain Current:
4 A
Total Charge:
142 to 184 nC
Input Capacitance:
16 to 22 pF
Output Capacitance:
17 to 26 pF
Temperature operating range:
-55 to 125 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
BGA
Dimensions:
0.9 x 0.9 mm
more info
EPC7019 Image
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Rad Hard GaN Power Transistor for Deep Space Applications

Space Qualified GaN Power Transistor from Efficient Power Conversion
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SKU:EPC7019
Segment:
Satellite
Gate Threshold Voltage:
800 to 2500 mV
Drain Source Voltage:
40 V
Drain Source Resistance:
1.2 to 1.5 milli-ohm
Continous Drain Current:
95 A
Pulsed Drain Current:
530 A
Total Charge:
22 nC
Input Capacitance:
2830 pF
Output Capacitance:
1660 pF
Temperature operating range:
-55 to 150 degree C
Package Type:
Die
Dimensions:
6.05 x 2.3 mm
more info
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40 V, 8 A, GaN Power Transistor

Space Qualified GaN Power Transistor from EPC Space
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SKU:FBG04N08A
Segment:
Satellite
Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
40 V
Drain Source Resistance:
24 to 28 milli-ohm
Continous Drain Current:
8 A
Pulsed Drain Current:
32 A
Total Charge:
2.2 to 2.8 nC
Input Capacitance:
283 to 312 pF
Output Capacitance:
170 to 270 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Surface Mount
Dimensions:
3.4 x 3.4 mm
more info
FBG04N30B Image
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Radiation Hardened eGaN HEMT for Satellites and Deep Space Probes

Space Qualified GaN Power Transistor from EPC Space
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SKU:FBG04N30B
Segment:
Satellite
Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
40 V
Drain Source Resistance:
5 to 8.5 milli-ohm
Continous Drain Current:
30 A
Pulsed Drain Current:
120 A
Total Charge:
8.9 to 11.4 nC
Input Capacitance:
1100 to 1300 pF
Output Capacitance:
650 to 900 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Surface Mount
Dimensions:
5.7 x 3.9 mm
more info
EPC7019G Image
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40 V eGaN HEMT for Commercial Satellite Applications

Space Qualified GaN Power Transistor from EPC Space
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SKU:EPC7019G
Segment:
Satellite
Configuration:
Dual
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
40 V
Drain Source Resistance:
3.7 milliohm
Continous Drain Current:
95 A
Pulsed Drain Current:
530 A
Total Charge:
22 nC
Input Capacitance:
2830 pF
Output Capacitance:
1660 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Surface Mount
Dimensions:
8.0 x 5.6 mm
more info
EPC7014UB Image
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Rad Hard e-GaN HEMT for Commercial Satellite Space Environments

Space Qualified GaN Power Transistor from EPC Space
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SKU:EPC7014UB
Segment:
Satellite
Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
60 V
Drain Source Resistance:
340 to 580 milli-ohm
Continous Drain Current:
1 A
Pulsed Drain Current:
4 A
Total Charge:
0.142 to 0.184 nC
Input Capacitance:
16 to 22 pF
Output Capacitance:
0.1 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Surface Mount
Dimensions:
3.25 x 2.74 mm
more info
FBG10N30B Image
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Radiation Hardened 100 V eGaN Transistor

Space Qualified GaN Power Transistor from EPC Space
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SKU:FBG10N30B
Segment:
Satellite
Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
8 to 12 milli-ohm
Continous Drain Current:
30 A
Pulsed Drain Current:
120 A
Total Charge:
8.3 to 11 nC
Input Capacitance:
850 to 1000 pF
Output Capacitance:
500 to 700 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Surface Mount
Dimensions:
5.715 x 3.937 mm
more info
FBG10N05A Image
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100 V Radiation Hardened eGaN HEMT

Space Qualified GaN Power Transistor from EPC Space
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SKU:FBG10N05A
Segment:
Satellite
Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
36 to 45 milli-ohm
Continous Drain Current:
5 A
Pulsed Drain Current:
20 A
Total Charge:
1.7 to 2.2 nC
Input Capacitance:
207 to 233 pF
Output Capacitance:
133 to 170 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Surface Mount
Dimensions:
3.4 x 3.4 mm
more info
FBG20N04A Image
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200 V Radiation Hard GaN HEMT for Deep Space Applications

Space Qualified GaN Power Transistor from EPC Space
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SKU:FBG20N04A
Segment:
Satellite
Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.8 V
Drain Source Voltage:
200 V
Drain Source Resistance:
68 to 130 milli-ohm
Continous Drain Current:
4 A
Pulsed Drain Current:
16 A
Total Charge:
1.6 to 3 nC
Input Capacitance:
106 to 150 pF
Output Capacitance:
72 to 90 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Surface Mount
Dimensions:
3.4 x 3.4 mm
more info
FBG20N18B Image
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200 V Rad Hard e-GaN HEMT for Satellite and Avionics Applications

Space Qualified GaN Power Transistor from EPC Space
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SKU:FBG20N18B
Segment:
Satellite
Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
200 V
Drain Source Resistance:
21 to 28 milli-ohm
Continous Drain Current:
18 A
Pulsed Drain Current:
72 A
Total Charge:
5 to 7 nC
Input Capacitance:
637 to 900 pF
Output Capacitance:
300 to 359 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Surface Mount
Dimensions:
5.7 x 3.9 mm
more info
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RoHS Compliant

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GaN Transistors Directory