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Space Qualified Memory from Manufacturers in United States - Page 4

141 Space Qualified Memory from 10 Manufacturers meet your specification.
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141 Space Qualified Memory from 10 Manufacturers
141 Products from 10 Manufacturers
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HX6136 Image
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Honeywell Aerospace - HX6136

Space Qualified Memory from Honeywell Aerospace
Description:1K x 36-bit Radiation Hardened First-In First-Out Memory

Product Specs

Orbit:
GEO
Memory Type:
SRAM
Storage Capacity:
36 Mb
Volatility:
Volatile
Read Access Time:
36 ns
Write Access Time:
36 ns
Bit Size:
9 Bits
Output Waveform:
RICMOS, CMOS
Radiation Dose:
1x106 rad(Si)
Soft Error Rate:
1x10-10 upsets/bit-day
Dose Rate Upset:
1x109 rad(Si)/s
Dose Rate Survivability:
1x1011 rad(Si)/s
Voltage:
5 V
Operating Temperature:
-55 to 125 Degree C
Space Standard:
MIL-PRF-38535, MIL-STD-883
Storage Temperature:
-65 to 150 Degree C
Package:
32-Lead CFP, 68-Lead CQFP, 132-Lead CQFP
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Cobham Advanced Electronic Solutions - UT81NFR1G1

Space Qualified Memory from Cobham Advanced Electronic Solutions
Description:1 Gb Serial NOR Flash Memory

Product Specs

Memory Type:
NOR Flash, SRAM
Storage Capacity:
1 Gb
Volatility:
Non-Volatile, Volatile
Bit Size:
1G x 1-bits
Data Retention:
10 Years
Radiation Dose:
300 krad(Si)
Standard:
QML-Q, QML-Q+, QML-V
Voltage:
2.25 to 3.6 V
Current:
± 10 mA
Power Consumption:
22.5 W (Power Dissipation)
Programming Endurance:
100k Cycles
Operating Temperature:
-55 to 105 Degree C
Storage Temperature:
-55 to 150 Degree C
Package:
142 pin CCGA, CBGA, and CLGA
Application:
Space, Boot memory for microprocessors and FPGAs
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BAE Systems - 251A172

Space Qualified Memory from BAE Systems

Product Specs

Memory Type:
SRAM
Volatility:
Volatile
Radiation Dose:
100 krad
Standard:
MIL-PRF-38535, MIL-STD-883
Voltage:
2.5 to 3.3 V
Package:
84-lead FP
Application:
Specific, Test & Measurement, Military, Commercial, Space, Avionics
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Avalanche Technology - AS3064B16

Space Qualified Memory from Avalanche Technology
Description:Space-Grade Parallel Persistent SRAM Memory

Product Specs

Memory Type:
SRAM
Volatility:
Volatile
Read Access Time:
45 ns
Write Access Time:
45 ns
Data Retention:
10 to 1000000 Years
Voltage:
2.7 to 3.6 V
Current:
40 to 60 mA
Operating Temperature:
-40 to 125 Degree C
Package:
48-ball FBGA
Application:
Automotive, Military
Dimension:
10 x 10 mm
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Data Device Corporation - 89LV1632

Space Qualified Memory from Data Device Corporation
Description:Rad Hard 16 Megabit (512K x 32-Bit) Low Voltage MCM SRAM Memory

Product Specs

Memory Type:
SRAM
Storage Capacity:
512 Mb
Volatility:
Volatile
Read Access Time:
20, 25, 30 ns
Write Access Time:
20 to 30 ns
Radiation Dose:
100 krad
Mass:
42 gms
Voltage:
3 to 3.6 V
Current:
310 to 330 mA
Power Consumption:
4 W
Operating Temperature:
-55 to 125 Degree C
Space Standard:
MIL-PRF-38534, MIL-PRF-38535
Storage Temperature:
-65 to 150 Degree C
Package:
68-pin quad flat package
Application:
Space Applications
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Frontgrade Technologies - UT8Q512E

Space Qualified Memory from Frontgrade Technologies
Description:512K x 8 Radiation Tolerant, Asynchronous SRAM

Product Specs

Space Heritage:
Yes
Orbit:
LEO, GEO
Memory Type:
SRAM
Storage Capacity:
4 MB
Volatility:
Volatile
Read Access Time:
20 nS
Write Access Time:
20 nS
Bit Size:
4 Mbits
Output Waveform:
TTL, CMOS
Radiation Dose:
100 krad
Soft Error Rate:
1.1 x E-9 errors/bit-day
Standard:
MIL-STD-883
Voltage:
3 to 3.6 V
Current:
50 to 76 mA
Operating Temperature:
-55 to 125 Degree C
Space Standard:
QML-Q, QML-V
Storage Temperature:
-65 to 150 Degree C
Package Type:
Ceramic
Package:
36-Lead FP
Application:
Ideal for fault tolerant designs in harsh space environments
more info
HX6409 Image
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Honeywell Aerospace - HX6409

Space Qualified Memory from Honeywell Aerospace
Description:4K x 9-bit Monolithic Radiation Hardened Static RAM

Product Specs

Orbit:
GEO
Memory Type:
SRAM
Storage Capacity:
36 Mb
Volatility:
Volatile
Read Access Time:
36 ns
Write Access Time:
36 ns
Bit Size:
36 Bits
Output Waveform:
RICMOS, CMOS
Radiation Dose:
1x106 rad(Si)
Soft Error Rate:
1x10-10 upsets/bit-day
Dose Rate Upset:
1x109 rad(Si)/s
Dose Rate Survivability:
1x1011 rad(Si)/s
Voltage:
5 V
Operating Temperature:
-55 to 125 Degree C
Space Standard:
MIL-PRF-38535, MIL-STD-883
Package:
32-Lead CFP, 68-Lead CQFP, 132-Lead CQFP
more info
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Cobham Advanced Electronic Solutions - UT8R512K8

Space Qualified Memory from Cobham Advanced Electronic Solutions
Description:512Kx8 SRAM Memory

Product Specs

Memory Type:
SRAM
Storage Capacity:
512 Mb
Volatility:
Volatile
Read Access Time:
15 ns
Write Access Time:
15 ns
Output Waveform:
TTL, CMOS
Radiation Dose:
100 krad(Si), 1.0E9 rad(Si)/sec (Upset), 1.0E11 rad(Si)/sec (Latchup)
Mass:
3.762 gms
Standard:
QML-Q, QML-V
Voltage:
1.8 to 3.3 V
Current:
±5 mA
Power Consumption:
1.2 W
Operating Temperature:
-55 to 125 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
36-Pin Ceramic
Application:
Ideal for fault tolerant designs for low earth orbits
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BAE Systems - 251A137

Space Qualified Memory from BAE Systems

Product Specs

Memory Type:
SRAM
Volatility:
Volatile
Radiation Dose:
100 krad
Standard:
MIL-PRF-38535, MIL-STD-883
Voltage:
2.5 to 3.3 V
Package:
84-lead FP
Application:
Specific, Test & Measurement, Military, Commercial, Space, Avionics
more info
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Avalanche Technology - AS301GB32

Space Qualified Memory from Avalanche Technology
Description:Space Grade Parallel Persistent SRAM Memory

Product Specs

Memory Type:
SRAM
Volatility:
Volatile
Read Access Time:
45 ns
Write Access Time:
45 ns
Data Retention:
10 to 1000000 Years
Voltage:
1 to 3.3 V
Current:
20 to 170 mA
Programming Endurance:
10^16 Cycles
Operating Temperature:
-40 to 125 Degree C
Storage Temperature:
-55 to 150 Degree C
Package:
142-ball FBGA
Application:
Automotive, Military
Dimension:
15 x 17 mm
more info
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Data Device Corporation - 79C2040B

Space Qualified Memory from Data Device Corporation
Description:Rad Hard 20 Megabit (512K x 40-Bit) EEPROM MCM Memory

Product Specs

Memory Type:
EEPROM
Storage Capacity:
20 Mb
Volatility:
Non-Volatile
Read Access Time:
150, 200 ns
Write Access Time:
10 ms
Data Retention:
10 Years
Radiation Dose:
10 krad, 25 krad, 40 krad, 60 krad
Mass:
35 gms
Voltage:
4.5 to 5.5 V
Current:
75 to 250 mA
Power Consumption:
0.375 W
Programming Endurance:
10000 Cycles
Operating Temperature:
-55 to 125 Degree C
Space Standard:
MIL-PRF-38534, MIL-PRF-38535
Storage Temperature:
-65 to 150 Degree C
Package:
Flat Pack
Application:
Space Applications
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Frontgrade Technologies - UT81NDQ512G8T

Space Qualified Memory from Frontgrade Technologies
Description:Space Industry 4Tb NAND Flash Memory

Product Specs

Space Heritage:
Yes
Memory Type:
DDR2, DDR3, NAND Flash
Storage Capacity:
512 GB x 8
Volatility:
Non-Volatile
Read Access Time:
74000 nS
Bit Size:
512 Gbits
Data Retention:
JESD47G
Radiation Dose:
50 krad
Voltage:
1.2 to 3.3 V
Power Consumption:
300 mW
Programming Endurance:
3 K Program/Erase Cycles (TLC mode), 40 K Program/Erase Cycles (SLC mode)
Operating Temperature:
-40 to 85 Degree C
Package Type:
Surface Mount
Package:
132-PBGA 1mm Pitch
Application:
Solid-State Drives, Solid-State Recorders, Reconfigurable Computing, Imaging and Communications Data Buffering, Space Computing
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HXNV06400 Image
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Honeywell Aerospace - HXNV06400

Space Qualified Memory from Honeywell Aerospace
Description:64 Mb Magneto resistive Memory for Space Applications

Product Specs

Memory Type:
MRAM
Storage Capacity:
64 Mb
Volatility:
Non-Volatile
Read Access Time:
100 ns
Write Access Time:
150 ns
Bit Size:
8 and 16 Bits
Output Waveform:
CMOS
Data Retention:
15 Years
Radiation Dose:
3x105 and 1x106 rad(Si)
Soft Error Rate:
1x10-10 upsets/bit-day, 1x10-11 upsets/bit-day
Dose Rate Upset:
1x109 rad(Si)/s
Dose Rate Survivability:
1x1012 rad(Si)/s
Voltage:
2.5 to 3.3 V
Current:
90 mA
Power Consumption:
4.1 W
Programming Endurance:
1x1015 Cycles
Operating Temperature:
-40 to 125 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
112-Lead Ceramic Flat Pack
Application:
Space and military
more info
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Cobham Advanced Electronic Solutions - UT28F256QLE

Space Qualified Memory from Cobham Advanced Electronic Solutions
Description:Radiation-Hardened 32K x 8 PROM

Product Specs

Memory Type:
PROM
Storage Capacity:
32 Mb
Volatility:
Non-Volatile
Read Access Time:
45 ns
Bit Size:
256kb, 32k x 8 bit
Output Waveform:
TTL, CMOS
Radiation Dose:
100 krad to 1 Mkrad(Si)
Standard:
JEDEC 132
Voltage:
5 V
Current:
80 mA
Power Consumption:
1.5 W (Power Dissipation)
Programming Endurance:
3 to 40 k Cycles
Operating Temperature:
-55 to 125 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
28-lead, BGA
Application:
Solid-State Drives, Solid-State Recorders, Reconfigurable Computing, Imaging and Communications Data Buffering, Space Computing
more info
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Data Device Corporation - 69F64G16

Space Qualified Memory from Data Device Corporation
Description:Rad Hard NAND Flash Memory

Product Specs

Memory Type:
NAND Flash
Storage Capacity:
256 Mb
Volatility:
Non-Volatile
Read Access Time:
16 to 25 ns
Write Access Time:
20 ns
Radiation Dose:
100 krad
Mass:
15 gms, 19 gms
Voltage:
1.7 to 3.6 V
Operating Temperature:
-55 to 125 Degree C
Space Standard:
MIL-PRF-38534, MIL-PRF-38535
Storage Temperature:
-65 to 150 Degree C
Package:
Flat Pack
Application:
Space Applications
more info
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