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Space Qualified Memory

77 Space Qualified Memory from 4 Manufacturers meet your specification.
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  • Manufacturers: Infineon Technologies, CAES, Microchip Technology, Avalanche Technology
AT60142H Image
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512 MB Radiation Hardened CMOS SRAM

Space Qualified Memory from Microchip Technology
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SKU:AT60142H
Memory Type:
SRAM, RAM
Storage Capacity:
512 Mb
Volatility:
Volatile
Read Access Time:
15 ns
Write Access Time:
15 ns
Bit Size:
524 x 288 x 8 Bits
Output Waveform:
TTL, CMOS
Radiation Dose:
300 krad(Si)
Standard:
MIL-STD-883, QML-Q, QML-V, MIL-PRF-38535, ESCC 9000
Voltage:
3 to 3.6 V
Current:
1 mA
Power Consumption:
540 to 650 mW
Operating Temperature:
-55 to 125 Degree C
Storage Temperature:
-65 to 150 Degree C
Application:
Aerospace electronics, portable instruments, embarked systems
more info
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72-Mbit QDR SRAM Four-Word Burst Architecture with RadStop Technology

Space Qualified Memory from Infineon Technologies
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SKU:CYRS1545AV18
Memory Type:
SRAM
Storage Capacity:
72 Mb
Volatility:
Volatile
Read Access Time:
1 ms (first access)
Radiation Dose:
300 krad
Standard:
MIL-STD-883
Voltage:
1.7 to 1.9 V
Operating Temperature:
-55 to 125 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
LGA, CCGA
Application:
Military, edges
Dimension:
21 × 25 × 2.83 mm
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CAES - UT8R2M39

Space Qualified Memory from CAES
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Description:80 Mb, radiation hardened by design, high performance CMOS static RAM multichip module (MCM)
Memory Type:
RAM
Storage Capacity:
80 Mb
Volatility:
Volatile
Read Access Time:
20 ns
Write Access Time:
10 ns
Bit Size:
39 Bits
Output Waveform:
CMOS
Radiation Dose:
100 krad(Si)
Standard:
QML-Q, QML-Q+, QML-V
Voltage:
1.7 to 3.6 V
Current:
± 10 mA
Power Consumption:
2 W
Operating Temperature:
-55 to 105 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
132-Pin Side-Brazed Dual Cavity Ceramic Quad Flatpack
Application:
Microprocessors, microcontrollers, FPGAs
more info
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Space-Grade Parallel Persistent SRAM Memory

Space Qualified Memory from Avalanche Technology
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SKU:AS3016B16
Memory Type:
SRAM
Volatility:
Volatile
Read Access Time:
45 ns
Write Access Time:
45 ns
Data Retention:
10 to 1000000 Years
Voltage:
2.7 to 3.6 V
Operating Temperature:
-40 to 125 Degree C
Package:
48-ball FBGA
Application:
Automotive, Military
Dimension:
10 x 10 mm
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Infineon Technologies - CYRS1545AV18-250GCMB

Space Qualified Memory from Infineon Technologies
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Description:72-Mbit QDR II+ SRAM Four-Word Burst Architecture with RadStop Technology
Memory Type:
SRAM
Storage Capacity:
72 Mb
Volatility:
Volatile
Radiation Dose:
300 krad
Standard:
MIL-PRF-38535
Voltage:
1.7 to 1.9 V
Current:
1275 mA
Operating Temperature:
-55 to 125 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
165-ball Ceramic Column Grid Array
Application:
Military
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CAES - UT8R4M39

Space Qualified Memory from CAES
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Description:160 Mb, radiation hardened by design, high performance CMOS static RAM multichip module (MCM)
Memory Type:
RAM
Storage Capacity:
160 Mb
Volatility:
Volatile
Read Access Time:
20 ns
Write Access Time:
10 ns
Bit Size:
39 Bits
Output Waveform:
CMOS
Radiation Dose:
100 krad(Si)
Standard:
QML-Q, QML-Q+, QML-V
Voltage:
1.7 to 3.6 V
Current:
± 10 mA
Power Consumption:
1.3 W
Operating Temperature:
-55 to 105 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
132-Pin Side-Brazed Dual Cavity Ceramic Quad Flatpack
Application:
Microprocessors, microcontrollers, FPGAs
more info
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Space-Grade Parallel Persistent SRAM Memory

Space Qualified Memory from Avalanche Technology
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SKU:AS3032B16
Memory Type:
SRAM
Volatility:
Volatile
Read Access Time:
45 ns
Write Access Time:
45 ns
Data Retention:
10 to 1000000 Years
Voltage:
2.7 to 3.6 V
Operating Temperature:
-40 to 125 Degree C
Package:
48-ball FBGA
Application:
Automotive, Military
Dimension:
10 x 10 mm
more info
AT60142HT Image
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5 V Tolerant Radiation Hardened 4 Mbit SRAM

Space Qualified Memory from Microchip Technology
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SKU:AT60142HT
Memory Type:
SRAM, RAM
Storage Capacity:
4 Mb
Volatility:
Volatile
Read Access Time:
15 to 17 ns
Write Access Time:
15 to 17 ns
Bit Size:
512K x 8 Bits
Output Waveform:
TTL, CMOS
Radiation Dose:
300 krad(Si)
Standard:
MIL-PRF-38535, ESCC 9000
Voltage:
3.3 V, 5 V (Tolerant)
Current:
1 mA
Power Consumption:
540 to 610 mW
Operating Temperature:
-55 to 125 Degree C
Storage Temperature:
-65 to 150 Degree C
Application:
Aerospace electronics, portable instruments, embarked systems
more info
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Radiation hardened 2-Mbit Serial (SPI) F-RAM

Space Qualified Memory from Infineon Technologies
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SKU:CYRS15B102Q
Memory Type:
FRAM
Storage Capacity:
2 Mb
Volatility:
Volatile
Read Access Time:
1 ms (first access)
Data Retention:
121 Years
Radiation Dose:
150 krad, 200 krad
Standard:
MIL-PRF-38535
Voltage:
2 to 3.6 V
Operating Temperature:
-55 to 125 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
16-pin ceramic SOP
Application:
Military
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512Kx8 SRAM Memory

Space Qualified Memory from CAES
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SKU:UT8R512K8
Memory Type:
SRAM
Storage Capacity:
512 Mb
Volatility:
Volatile
Read Access Time:
15 ns
Write Access Time:
15 ns
Output Waveform:
TTL, CMOS
Radiation Dose:
100 krad(Si), 1.0E9 rad(Si)/sec (Upset), 1.0E11 rad(Si)/sec (Latchup)
Mass:
3.762 gms
Standard:
QML-Q, QML-V
Voltage:
1.8 to 3.3 V
Current:
±5 mA
Power Consumption:
1.2 W
Operating Temperature:
-55 to 125 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
36-Pin Ceramic
Application:
Ideal for fault tolerant designs for low earth orbits
more info
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