Space Qualified Memory - Data Device Corporation

36 Space Qualified Memory from Data Device Corporation meet your specification.

Space Qualified Memory from Data Device Corporation are listed on SatNow. We have compiled a list of Space Qualified Memory from the Data Device Corporation website/catalog and made their products searchable by specification. Use the filters to narrow down on products based on your requirements. Download datasheets and request quotes for products that you find interesting. Your inquiry will be directed to Data Device Corporation and their distributors in your region.

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  • Manufacturers: Data Device Corporation
SKU:27C010T
Memory Type:
EEPROM
Storage Capacity:
1 Mb
Volatility:
Non-Volatile
Read Access Time:
120, 150, 200 ns
Radiation Dose:
100 krad
Mass:
6 gms
Voltage:
4.5 to 5.5 V
Current:
30 to 50 mA
Power Consumption:
0.05 W
Operating Temperature:
-55 to 125 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
32 pin RAD-PAK® flat pack
Application:
Space Applications
more info
SKU:27C512T
Memory Type:
EEPROM
Storage Capacity:
512 Mb
Volatility:
Non-Volatile
Read Access Time:
120, 150, 200 ns
Radiation Dose:
100 krad
Standard:
MIL-STD-883
Voltage:
4.5 to 5.5 V
Current:
30 to 50 mA
Power Consumption:
0.1 W
Operating Temperature:
-55 to 125 Degree C
Storage Temperature:
-65 to 125 Degree C
Package:
32 pin RAD-PAK® flat pack, 32 pin RAD-PAK® DIP
Application:
Space Applications
more info
SKU:28C010T (SMD# 5962-38267)
Memory Type:
EEPROM
Storage Capacity:
1 Mb
Volatility:
Non-Volatile
Read Access Time:
120, 150, 200 ns
Write Access Time:
10 ms
Data Retention:
10 Years
Radiation Dose:
10 krad, 25 krad, 40 krad, 60 krad
Mass:
7.4 gms, 2.7 gms, 10.9 gms
Standard:
MIL-STD-883
Voltage:
4.5 to 5.5 V
Current:
15 to 50 mA
Power Consumption:
0.02 W
Operating Temperature:
-55 to 125 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
32 pin RAD-PAK® flat pack, 32 pin RAD-PAK® DIP
Application:
Space Applications
more info
SKU:28C011T (SMD# 5962-38267)
Memory Type:
EEPROM
Storage Capacity:
1 Mb
Volatility:
Non-Volatile
Read Access Time:
120, 150, 200 ns
Write Access Time:
10 ms
Data Retention:
10 Years
Radiation Dose:
10 krad, 25 krad, 40 krad, 60 krad
Voltage:
4.5 to 5.5 V
Current:
15 to 50 mA
Power Consumption:
0.02 W
Operating Temperature:
-55 to 125 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
32-pin RAD-PAK® flat package
Application:
Space Applications
more info
SKU:28LV010
Memory Type:
EEPROM
Storage Capacity:
1 Mb
Volatility:
Non-Volatile
Read Access Time:
200 to 250 ns
Write Access Time:
15 ms
Data Retention:
10 Years
Radiation Dose:
10 krad, 25 krad, 40 krad, 60 krad
Mass:
2.69 gms, 7.38 gms, 10.97 gms
Standard:
MIL-STD-883
Voltage:
3.3 V
Current:
6 to 15 mA
Power Consumption:
0.02 W
Operating Temperature:
-55 to 125 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
DIP, Flat Pack
Application:
Space Applications
more info
SKU:28LV011
Memory Type:
EEPROM
Storage Capacity:
1 Mb
Volatility:
Non-Volatile
Read Access Time:
200 to 250 ns
Write Access Time:
15 ms
Data Retention:
10 Years
Radiation Dose:
10 krad, 25 krad, 40 krad, 60 krad
Voltage:
3.3 V
Current:
6 to 15 mA
Power Consumption:
0.02 W
Operating Temperature:
-55 to 125 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
32 Pin RAD-PAK® Flat Pack
Application:
Space Applications
more info
SKU:29F0408
Memory Type:
Flash
Storage Capacity:
32 Mb
Volatility:
Non-Volatile
Read Access Time:
35 ns
Write Access Time:
50 ns
Data Retention:
10 Years
Voltage:
4.5 to 5.5 V
Current:
15 to 40 mA
Operating Temperature:
-40 to 125 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
44 pin flat package
Application:
Space Applications
more info
SKU:29F32G08
Memory Type:
NAND Flash
Storage Capacity:
32 Mb
Volatility:
Non-Volatile
Read Access Time:
16 to 25 ns
Write Access Time:
20 ns
Mass:
15 gms, 19 gms
Voltage:
1.7 to 3.6 V
Operating Temperature:
-55 to 125 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
Flat Pack
Application:
Space Applications
more info
SKU:33LV408
Memory Type:
SRAM
Storage Capacity:
4 Mb
Volatility:
Volatile
Read Access Time:
20, 25, 30 ns
Write Access Time:
20 to 30 ns
Radiation Dose:
100 krad
Voltage:
3 to 3.6 V
Current:
130 to 150 mA
Power Consumption:
1 W
Operating Temperature:
-55 to 125 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
32-Pin RAD-PAK® flat pack
Application:
Space Applications
more info
SKU:48SD1616
Memory Type:
SDRAM
Storage Capacity:
256 Mb
Volatility:
Volatile
Read Access Time:
6 ns
Radiation Dose:
100 krad
Voltage:
0 to 3.6 V
Current:
115 mA
Power Consumption:
1 W
Operating Temperature:
-55 to 125 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
72-Pin RAD-PAK® Flat Package
Application:
Space Applications
more info

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