Space Qualified Memory - Honeywell Aerospace

19 Space Qualified Memory from Honeywell Aerospace meet your specification.

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  • Manufacturers: Honeywell Aerospace
SKU:HLX6228
Memory Type:
SRAM
Storage Capacity:
128 Mb
Volatility:
Volatile
Read Access Time:
18 ns
Write Access Time:
15 ns
Bit Size:
128K x 8 Bits
Output Waveform:
RICMOS, CMOS
Radiation Dose:
1x106 rad(Si)
Soft Error Rate:
1x10-10 upsets/bit-day
Dose Rate Upset:
1x109 rad(Si)/s
Dose Rate Survivability:
1x1012 rad(Si)/s
Voltage:
3.3 V
Current:
25 mA
Power Consumption:
2 to 360 mW
Operating Temperature:
-55 to 125 Degree C
Package:
32-Lead CFP, 40-Lead CFP
Application:
Space and military, Defense
more info
SKU:HLX6256
Memory Type:
SRAM
Storage Capacity:
32 Mb
Volatility:
Volatile
Read Access Time:
20 ns
Write Access Time:
18 ns
Bit Size:
32K x 8 Bits
Output Waveform:
RICMOS, CMOS
Radiation Dose:
1x106 rad(Si)
Soft Error Rate:
1x10-10 upsets/bit-day
Dose Rate Upset:
1x109 rad(Si)/s
Dose Rate Survivability:
1x1011 rad(Si)/s
Voltage:
3.3 V
Current:
25 mA
Power Consumption:
4 to 400 mW
Operating Temperature:
-55 to 125 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
28-Lead CFP, 28-Lead DIP, 36-Lead CFP
Application:
Space and military, Defense
more info
SKU:HLXSR01608
Memory Type:
SRAM
Storage Capacity:
32 Mb
Volatility:
Volatile
Write Access Time:
9 ns
Bit Size:
2M x 8 Bits
Output Waveform:
CMOS
Radiation Dose:
1x106 rad(Si)
Soft Error Rate:
1x10-12 upsets/bit-day, 5x10-12 upsets/bit-day
Dose Rate Upset:
1x10-10 upsets/bit-day
Dose Rate Survivability:
1x1012 rad(Si)/s
Mass:
6.5 gms
Voltage:
1.5 to 3.3 V
Current:
15 mA
Power Consumption:
125 mW
Operating Temperature:
-55 to 125 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
40-Lead Ceramic Flat Pack
Application:
Space and military
Dimension:
21.67 x 25.65 x 2.87 mm
more info
Description:512k x 32 Radiation Hardened Static RAM is a high performance 524,288 word x 32-bit static random access memory
Memory Type:
SRAM
Storage Capacity:
2 Mb
Volatility:
Volatile
Write Access Time:
9 ns
Bit Size:
512K x 32 Bits
Output Waveform:
CMOS
Radiation Dose:
3x105 and 1x106 rad(Si)
Soft Error Rate:
1x10-12 upsets/bit-day, 5x10-12 upsets/bit-day
Dose Rate Upset:
1x10-10 upsets/bit-day
Dose Rate Survivability:
1x1012 rad(Si)/s
Mass:
7 gms
Voltage:
1.5 to 3.3 V
Current:
15 mA
Power Consumption:
260 mW
Operating Temperature:
-55 to 125 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
86-Lead Ceramic Flat Pack
Application:
Space and military
Dimension:
21.67 x 28.91 x 4.01 mm
more info
Description:512k x 8 Radiation Tolerant Static RAM, 150nm silicon-on-insulator CMOS
Memory Type:
SRAM
Storage Capacity:
512 Mb
Volatility:
Volatile
Write Access Time:
7 ns
Bit Size:
512K x 8 Bits
Output Waveform:
CMOS
Radiation Dose:
1x105 rad(Si)
Soft Error Rate:
1x10-12 upsets/bit-day, 2x10-12 upsets/bit-day
Voltage:
1.8 to 3.3 V
Current:
15 mA
Power Consumption:
80 mW
Operating Temperature:
-55 to 125 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
36-Lead Ceramic Flat Pack
Application:
Space and military
more info
Description:HX6409 is a 4096-word by 9-bit memory array; the HX6218 is a 2048-word by 18-bit memory array; and the HX6136 is a 1024-word by 36-bit memory array
Memory Type:
SRAM
Storage Capacity:
36 Mb
Volatility:
Volatile
Read Access Time:
36 ns
Write Access Time:
36 ns
Bit Size:
9 Bits
Output Waveform:
RICMOS, CMOS
Radiation Dose:
1x106 rad(Si)
Soft Error Rate:
1x10-10 upsets/bit-day
Dose Rate Upset:
1x109 rad(Si)/s
Dose Rate Survivability:
1x1011 rad(Si)/s
Voltage:
5 V
Operating Temperature:
-55 to 125 Degree C
Package:
32-Lead CFP, 68-Lead CQFP, 132-Lead CQFP
more info
Description:HX6409 is a 4096-word by 9-bit memory array; the HX6218 is a 2048-word by 18-bit memory array; and the HX6136 is a 1024-word by 36-bit memory array
Memory Type:
SRAM
Storage Capacity:
36 Mb
Volatility:
Volatile
Read Access Time:
36 ns
Write Access Time:
36 ns
Bit Size:
18 Bits
Output Waveform:
RICMOS, CMOS
Radiation Dose:
1x106 rad(Si)
Soft Error Rate:
1x10-10 upsets/bit-day
Dose Rate Upset:
1x109 rad(Si)/s
Dose Rate Survivability:
1x1011 rad(Si)/s
Voltage:
5 V
Operating Temperature:
-55 to 125 Degree C
Package:
32-Lead CFP, 68-Lead CQFP, 132-Lead CQFP
more info
Description:128K x 8 Radiation Hardened Static RAM is a high performance 131,072 word x 8-bit
Memory Type:
SRAM
Storage Capacity:
128 Mb
Volatility:
Volatile
Read Access Time:
16 ns
Write Access Time:
16 ns
Bit Size:
128K x 8 Bits
Output Waveform:
TTL, RICMOS, CMOS
Radiation Dose:
1x106 rad(Si)
Soft Error Rate:
1x10-10 upsets/bit-day
Dose Rate Upset:
1x1011rad(Si)/s
Dose Rate Survivability:
1x1012 rad(Si)/s
Voltage:
5 V
Current:
25 mA
Power Consumption:
5 to 1000 mW
Operating Temperature:
-55 to 125 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
32-Lead CFP, 40-Lead CFP
Application:
Space and military, Defense
more info
Description:32K x 8 Radiation Hardened Static RAM is a high performance 32,768 word x 8-bit static random access memory
Memory Type:
SRAM
Storage Capacity:
32 Mb
Volatility:
Volatile
Read Access Time:
17 ns
Write Access Time:
25 ns
Bit Size:
32K x 8 Bits
Output Waveform:
TTL, CMOS
Radiation Dose:
1x106 rad(Si)
Soft Error Rate:
1x10-10 upsets/bit-day
Dose Rate Upset:
1x109 rad(Si)/s
Dose Rate Survivability:
1x1011 rad(Si)/s
Voltage:
5 V
Current:
25 mA
Power Consumption:
600 mW (at 40 MHz)
Operating Temperature:
-55 to 125 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
28-Lead CFP, 28-Lead DIP, 36-Lead CFP—Bottom Braze, 36-Lead CFP –Top Braze
Application:
Space and military
more info
SKU:HX6356
Memory Type:
SRAM
Storage Capacity:
32 Mb
Volatility:
Volatile
Read Access Time:
14 ns
Write Access Time:
25 ns
Bit Size:
32K x 8 Bits
Output Waveform:
TTL, RICMOS, CMOS
Radiation Dose:
1x106 rad(Si)
Soft Error Rate:
1x10-10 upsets/bit-day
Dose Rate Upset:
1x109 rad(Si)/s
Dose Rate Survivability:
1x1011 rad(Si)/s
Voltage:
5 V
Current:
25 mA
Power Consumption:
5 to 800 mW
Operating Temperature:
-55 to 125 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
36-Lead CFP—Bottom Braze, 36-Lead CFP –Top Braze
Application:
Space and military, Defense
more info

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