Space Qualified Memory - CAES

26 Space Qualified Memory from CAES meet your specification.

Space Qualified Memory from CAES are listed on SatNow. We have compiled a list of Space Qualified Memory from the CAES website/catalog and made their products searchable by specification. Use the filters to narrow down on products based on your requirements. Download datasheets and request quotes for products that you find interesting. Your inquiry will be directed to CAES and their distributors in your region.

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  • Manufacturers: CAES
SKU:UT28F256LVQLE
Memory Type:
PROM
Storage Capacity:
32 Mb
Volatility:
Non-Volatile
Read Access Time:
65 ns
Bit Size:
256kb, 32k x 8 bit
Output Waveform:
TTL, CMOS
Radiation Dose:
100 krad to 1 Mkrad(Si)
Voltage:
3 to 3.6 V
Current:
50 mA
Power Consumption:
40 mW
Operating Temperature:
-55 to 125 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
28-lead
Application:
Boot Code Storage for Microcontrollers and Microprocessors
more info
SKU:UT28F256QLE
Memory Type:
PROM
Storage Capacity:
32 Mb
Volatility:
Non-Volatile
Read Access Time:
45 ns
Bit Size:
256kb, 32k x 8 bit
Output Waveform:
TTL, CMOS
Radiation Dose:
100 krad to 1 Mkrad(Si)
Standard:
JEDEC 132
Voltage:
5 V
Current:
80 mA
Power Consumption:
1.5 W (Power Dissipation)
Programming Endurance:
3 to 40 k Cycles
Operating Temperature:
-55 to 125 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
28-lead, BGA
Application:
Solid-State Drives, Solid-State Recorders, Reconfigurable Computing, Imaging and Communications Data Buffering, Space Computing
more info
SKU:UT81NDQ512G8T
Memory Type:
NAND Flash
Storage Capacity:
1 Gb
Volatility:
Non-Volatile
Read Access Time:
3 ns (Clock Rate)
Bit Size:
8 Bits
Radiation Dose:
30 to 50 krad (Si)
Mass:
0.534 gms
Standard:
JEDEC 132
Voltage:
2.7 to 3.6 V
Power Consumption:
300 mW
Programming Endurance:
3000 to 40000 Cycles
Package:
132-ball BGA
Application:
Space, Systems and imaging and Communications
more info
SKU:UT81NFR128M8
Memory Type:
NOR Flash, SRAM
Storage Capacity:
128 Mb
Volatility:
Non-Volatile, Volatile
Read Access Time:
60 ns
Write Access Time:
40 ns
Bit Size:
128M x 8-bits or 64M x 16 Bits
Output Waveform:
CMOS
Data Retention:
10 Years
Radiation Dose:
300 krad(Si)
Standard:
QML-Q, QML-Q+, QML-V
Voltage:
2.25 to 3.6 V
Current:
± 10 mA
Power Consumption:
22.5 W (Power Dissipation)
Programming Endurance:
100k Cycles
Operating Temperature:
-55 to 105 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
142 pin CCGA, CBGA, and CLGA
Application:
Space, Boot memory for microprocessors and FPGAs
more info
SKU:UT81NFR1G1
Memory Type:
NOR Flash, SRAM
Storage Capacity:
1 Gb
Volatility:
Non-Volatile, Volatile
Bit Size:
1G x 1-bits
Data Retention:
10 Years
Radiation Dose:
300 krad(Si)
Standard:
QML-Q, QML-Q+, QML-V
Voltage:
2.25 to 3.6 V
Current:
± 10 mA
Power Consumption:
22.5 W (Power Dissipation)
Programming Endurance:
100k Cycles
Operating Temperature:
-55 to 105 Degree C
Storage Temperature:
-55 to 150 Degree C
Package:
142 pin CCGA, CBGA, and CLGA
Application:
Space, Boot memory for microprocessors and FPGAs
more info
SKU:UT81NFR64M1
Memory Type:
NOR Flash
Storage Capacity:
64 Mb
Volatility:
Non-Volatile
Bit Size:
64M x 1-bits
Data Retention:
10 Years
Radiation Dose:
300 krad(Si)
Standard:
QML-Q, QML-V
Voltage:
1.7 to 3.6 V
Current:
± 10 mA
Programming Endurance:
100k Cycles
Operating Temperature:
-55 to 125 Degree C
Storage Temperature:
-55 to 150 Degree C
Package:
20 pin ceramic
Application:
Space, Boot memory for microprocessors and FPGAs
more info
SKU:UT81NFR8M8
Memory Type:
NOR Flash
Storage Capacity:
16 Mb
Volatility:
Non-Volatile, Volatile
Read Access Time:
60 ns
Bit Size:
8M x 8-bits or 4M x 16-bits
Data Retention:
10 Years
Radiation Dose:
300 krad(Si)
Standard:
QML-Q, QML-V
Voltage:
1.7 to 3.6 V
Current:
± 10 mA
Programming Endurance:
100k Cycles
Operating Temperature:
-55 to 125 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
48 pin ceramic
Application:
Space, Boot memory for microprocessors and FPGAs
more info
SKU:UT8CR512K32
Memory Type:
RAM
Storage Capacity:
8 Mb
Volatility:
Volatile
Read Access Time:
17 ns
Write Access Time:
17 ns
Bit Size:
8 Bits
Output Waveform:
CMOS
Radiation Dose:
100 krad(Si)
Mass:
20.238 gms
Standard:
QML-Q, QML-V
Voltage:
1.8 to 3.3 V
Current:
± 5 mA
Power Consumption:
1.2 W (Power Dissipation)
Operating Temperature:
-55 to 105 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
68-lead ceramic quad flatpack
Application:
Ideal for fault tolerant designs in harsh space environments
more info
Description:32 Mb, radiation hardened by design, high performance CMOS static RAM multichip module (MCM)
Memory Type:
RAM
Storage Capacity:
32 Mb
Volatility:
Volatile
Read Access Time:
20 ns
Write Access Time:
10 ns
Bit Size:
32 Bits
Output Waveform:
CMOS
Radiation Dose:
100 krad(Si)
Standard:
QML-Q, QML-Q+, QML-V
Voltage:
1.7 to 3.6 V
Current:
± 10 mA
Power Consumption:
3.3 W
Operating Temperature:
-55 to 105 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
132-Pin Side-Brazed Dual Cavity Ceramic Quad Flatpack
Application:
Microprocessors, microcontrollers, FPGAs
more info
Description:64 Mb, radiation hardened by design, high performance CMOS static RAM multichip module (MCM)
Memory Type:
RAM
Storage Capacity:
32 Mb
Volatility:
Volatile
Read Access Time:
20 ns
Write Access Time:
10 ns
Bit Size:
32 Bits
Output Waveform:
CMOS
Radiation Dose:
100 krad(Si)
Standard:
QML-Q, QML-Q+, QML-V
Voltage:
1.7 to 3.6 V
Current:
± 10 mA
Power Consumption:
2 W
Operating Temperature:
-55 to 105 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
132-Pin Side-Brazed Dual Cavity Ceramic Quad Flatpack
Application:
Microprocessors, microcontrollers, FPGAs
more info

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