Space Qualified Memory - RAM

10 Space Qualified Memory from 2 Manufacturers meet your specification.
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  • Memory Type: RAM
SKU:AT60142H
Memory Type:
SRAM, RAM
Storage Capacity:
512 Mb
Volatility:
Volatile
Read Access Time:
15 ns
Write Access Time:
15 ns
Bit Size:
524 x 288 x 8 Bits
Output Waveform:
TTL, CMOS
Radiation Dose:
300 krad(Si)
Standard:
MIL-STD-883, QML-Q, QML-V, MIL-PRF-38535, ESCC 9000
Voltage:
3 to 3.6 V
Current:
1 mA
Power Consumption:
540 to 650 mW
Operating Temperature:
-55 to 125 Degree C
Storage Temperature:
-65 to 150 Degree C
Application:
Aerospace electronics, portable instruments, embarked systems
more info
SKU:AT60142HT
Memory Type:
SRAM, RAM
Storage Capacity:
4 Mb
Volatility:
Volatile
Read Access Time:
15 to 17 ns
Write Access Time:
15 to 17 ns
Bit Size:
512K x 8 Bits
Output Waveform:
TTL, CMOS
Radiation Dose:
300 krad(Si)
Standard:
MIL-PRF-38535, ESCC 9000
Voltage:
3.3 V, 5 V (Tolerant)
Current:
1 mA
Power Consumption:
540 to 610 mW
Operating Temperature:
-55 to 125 Degree C
Storage Temperature:
-65 to 150 Degree C
Application:
Aerospace electronics, portable instruments, embarked systems
more info
SKU:UT8CR512K32
Memory Type:
RAM
Storage Capacity:
8 Mb
Volatility:
Volatile
Read Access Time:
17 ns
Write Access Time:
17 ns
Bit Size:
8 Bits
Output Waveform:
CMOS
Radiation Dose:
100 krad(Si)
Mass:
20.238 gms
Standard:
QML-Q, QML-V
Voltage:
1.8 to 3.3 V
Current:
± 5 mA
Power Consumption:
1.2 W (Power Dissipation)
Operating Temperature:
-55 to 105 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
68-lead ceramic quad flatpack
Application:
Ideal for fault tolerant designs in harsh space environments
more info
Description:32 Mb, radiation hardened by design, high performance CMOS static RAM multichip module (MCM)
Memory Type:
RAM
Storage Capacity:
32 Mb
Volatility:
Volatile
Read Access Time:
20 ns
Write Access Time:
10 ns
Bit Size:
32 Bits
Output Waveform:
CMOS
Radiation Dose:
100 krad(Si)
Standard:
QML-Q, QML-Q+, QML-V
Voltage:
1.7 to 3.6 V
Current:
± 10 mA
Power Consumption:
3.3 W
Operating Temperature:
-55 to 105 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
132-Pin Side-Brazed Dual Cavity Ceramic Quad Flatpack
Application:
Microprocessors, microcontrollers, FPGAs
more info
Description:64 Mb, radiation hardened by design, high performance CMOS static RAM multichip module (MCM)
Memory Type:
RAM
Storage Capacity:
32 Mb
Volatility:
Volatile
Read Access Time:
20 ns
Write Access Time:
10 ns
Bit Size:
32 Bits
Output Waveform:
CMOS
Radiation Dose:
100 krad(Si)
Standard:
QML-Q, QML-Q+, QML-V
Voltage:
1.7 to 3.6 V
Current:
± 10 mA
Power Consumption:
2 W
Operating Temperature:
-55 to 105 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
132-Pin Side-Brazed Dual Cavity Ceramic Quad Flatpack
Application:
Microprocessors, microcontrollers, FPGAs
more info
Description:128 Mb, radiation hardened by design, high performance CMOS static RAM multichip module (MCM)
Memory Type:
RAM
Storage Capacity:
32 Mb
Volatility:
Volatile
Read Access Time:
25 ns
Write Access Time:
10 ns
Bit Size:
32 Bits
Output Waveform:
CMOS
Radiation Dose:
100 krad(Si)
Standard:
QML-Q, QML-Q+, QML-V
Voltage:
1.7 to 3.6 V
Current:
± 10 mA
Power Consumption:
1.3 W
Operating Temperature:
-55 to 105 Degree C
Storage Temperature:
-65 to 150 Degree C
Package Type:
Ceramic
Package:
132-Pin Side-Brazed Dual Cavity Ceramic Quad Flatpack
Application:
Microprocessors, microcontrollers, FPGAs
more info
SKU:UT8R128K32
Memory Type:
RAM
Storage Capacity:
4 Mb
Volatility:
Volatile
Read Access Time:
20 ns
Write Access Time:
10 ns
Output Waveform:
TTL, CMOS
Radiation Dose:
100 krad(Si)
Standard:
QML-Q, QML-V
Voltage:
1.8 to 3.3 V
Power Consumption:
5 W (Power Dissipation)
Operating Temperature:
-55 to 125 Degree C
Package:
68-lead Ceramic quad flatpack
Application:
Buffer memory for calibration, configuration and lookup table data
more info
Description:40 Mb, radiation hardened by design, high performance CMOS static RAM multichip module (MCM) that is functionally compatible with traditional 1Mx39 SRAM devices.
Memory Type:
RAM
Storage Capacity:
40 Mb
Volatility:
Volatile
Read Access Time:
20 ns
Write Access Time:
10 ns
Bit Size:
39 Bits
Output Waveform:
CMOS
Radiation Dose:
100 krad(Si)
Standard:
QML-Q, QML-Q+, QML-V
Voltage:
1.7 to 3.6 V
Current:
± 10 mA
Power Consumption:
3.3 W
Operating Temperature:
-55 to 105 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
132-Pin Side-Brazed Dual Cavity Ceramic Quad Flatpack
Application:
Microprocessors, microcontrollers, FPGAs
more info
Description:80 Mb, radiation hardened by design, high performance CMOS static RAM multichip module (MCM)
Memory Type:
RAM
Storage Capacity:
80 Mb
Volatility:
Volatile
Read Access Time:
20 ns
Write Access Time:
10 ns
Bit Size:
39 Bits
Output Waveform:
CMOS
Radiation Dose:
100 krad(Si)
Standard:
QML-Q, QML-Q+, QML-V
Voltage:
1.7 to 3.6 V
Current:
± 10 mA
Power Consumption:
2 W
Operating Temperature:
-55 to 105 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
132-Pin Side-Brazed Dual Cavity Ceramic Quad Flatpack
Application:
Microprocessors, microcontrollers, FPGAs
more info
Description:160 Mb, radiation hardened by design, high performance CMOS static RAM multichip module (MCM)
Memory Type:
RAM
Storage Capacity:
160 Mb
Volatility:
Volatile
Read Access Time:
20 ns
Write Access Time:
10 ns
Bit Size:
39 Bits
Output Waveform:
CMOS
Radiation Dose:
100 krad(Si)
Standard:
QML-Q, QML-Q+, QML-V
Voltage:
1.7 to 3.6 V
Current:
± 10 mA
Power Consumption:
1.3 W
Operating Temperature:
-55 to 105 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
132-Pin Side-Brazed Dual Cavity Ceramic Quad Flatpack
Application:
Microprocessors, microcontrollers, FPGAs
more info

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