Space Qualified Memory - QML-Q+

13 Space Qualified Memory from 1 Manufacturer meet your specification.
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  • Standard: QML-Q+
SKU:UT81NFR128M8
Memory Type:
NOR Flash, SRAM
Storage Capacity:
128 Mb
Volatility:
Non-Volatile, Volatile
Read Access Time:
60 ns
Write Access Time:
40 ns
Bit Size:
128M x 8-bits or 64M x 16 Bits
Output Waveform:
CMOS
Data Retention:
10 Years
Radiation Dose:
300 krad(Si)
Standard:
QML-Q, QML-Q+, QML-V
Voltage:
2.25 to 3.6 V
Current:
± 10 mA
Power Consumption:
22.5 W (Power Dissipation)
Programming Endurance:
100k Cycles
Operating Temperature:
-55 to 105 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
142 pin CCGA, CBGA, and CLGA
Application:
Space, Boot memory for microprocessors and FPGAs
more info
SKU:UT81NFR1G1
Memory Type:
NOR Flash, SRAM
Storage Capacity:
1 Gb
Volatility:
Non-Volatile, Volatile
Bit Size:
1G x 1-bits
Data Retention:
10 Years
Radiation Dose:
300 krad(Si)
Standard:
QML-Q, QML-Q+, QML-V
Voltage:
2.25 to 3.6 V
Current:
± 10 mA
Power Consumption:
22.5 W (Power Dissipation)
Programming Endurance:
100k Cycles
Operating Temperature:
-55 to 105 Degree C
Storage Temperature:
-55 to 150 Degree C
Package:
142 pin CCGA, CBGA, and CLGA
Application:
Space, Boot memory for microprocessors and FPGAs
more info
Description:32 Mb, radiation hardened by design, high performance CMOS static RAM multichip module (MCM)
Memory Type:
RAM
Storage Capacity:
32 Mb
Volatility:
Volatile
Read Access Time:
20 ns
Write Access Time:
10 ns
Bit Size:
32 Bits
Output Waveform:
CMOS
Radiation Dose:
100 krad(Si)
Standard:
QML-Q, QML-Q+, QML-V
Voltage:
1.7 to 3.6 V
Current:
± 10 mA
Power Consumption:
3.3 W
Operating Temperature:
-55 to 105 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
132-Pin Side-Brazed Dual Cavity Ceramic Quad Flatpack
Application:
Microprocessors, microcontrollers, FPGAs
more info
Description:64 Mb, radiation hardened by design, high performance CMOS static RAM multichip module (MCM)
Memory Type:
RAM
Storage Capacity:
32 Mb
Volatility:
Volatile
Read Access Time:
20 ns
Write Access Time:
10 ns
Bit Size:
32 Bits
Output Waveform:
CMOS
Radiation Dose:
100 krad(Si)
Standard:
QML-Q, QML-Q+, QML-V
Voltage:
1.7 to 3.6 V
Current:
± 10 mA
Power Consumption:
2 W
Operating Temperature:
-55 to 105 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
132-Pin Side-Brazed Dual Cavity Ceramic Quad Flatpack
Application:
Microprocessors, microcontrollers, FPGAs
more info
Description:128 Mb, radiation hardened by design, high performance CMOS static RAM multichip module (MCM)
Memory Type:
RAM
Storage Capacity:
32 Mb
Volatility:
Volatile
Read Access Time:
25 ns
Write Access Time:
10 ns
Bit Size:
32 Bits
Output Waveform:
CMOS
Radiation Dose:
100 krad(Si)
Standard:
QML-Q, QML-Q+, QML-V
Voltage:
1.7 to 3.6 V
Current:
± 10 mA
Power Consumption:
1.3 W
Operating Temperature:
-55 to 105 Degree C
Storage Temperature:
-65 to 150 Degree C
Package Type:
Ceramic
Package:
132-Pin Side-Brazed Dual Cavity Ceramic Quad Flatpack
Application:
Microprocessors, microcontrollers, FPGAs
more info
SKU:UT8MR2M8
Memory Type:
MRAM, SRAM
Storage Capacity:
16 Mb
Volatility:
Non-Volatile
Read Access Time:
45 ns
Write Access Time:
45 ns
Output Waveform:
TTL, CMOS
Data Retention:
20 Years
Radiation Dose:
1 Mrad(Si)
Standard:
QML-Q, QML-Q+, QML-V
Voltage:
-0.5 to 4.3 V
Current:
± 20 mA
Power Consumption:
9 W (Power Dissipation)
Operating Temperature:
-40 to 105 Degree C
Storage Temperature:
-65 to 125 Degree C
Package:
Two 40-Pin
Application:
Space Grade
more info
SKU:UT8MR8M8
Memory Type:
MRAM, SRAM
Storage Capacity:
64 Mb
Volatility:
Non-Volatile
Read Access Time:
50 ns
Write Access Time:
50 ns
Bit Size:
8 Bits
Output Waveform:
TTL, CMOS
Data Retention:
20 Years
Radiation Dose:
1 Mrad(Si)
Mass:
21.99 gms
Standard:
QML-Q, QML-Q+, QML-V
Voltage:
3.3 V
Current:
± 20 mA
Power Consumption:
9 W (Power Dissipation)
Operating Temperature:
-40 to 105 Degree C
Storage Temperature:
-65 to 125 Degree C
Package Type:
Ceramic
Package:
64-pin ceramic
Application:
Space Grade
more info
SKU:UT8QNF8M8
Memory Type:
NOR Flash, SRAM
Storage Capacity:
64 Mb
Volatility:
Non-Volatile, Volatile
Read Access Time:
60 ns
Write Access Time:
60 ns
Bit Size:
8M x 8-bits or 4M x16-bits
Output Waveform:
CMOS
Data Retention:
20 Years
Radiation Dose:
10 to 50 krad(Si)
Standard:
QML-Q, QML-Q+, QML-V
Voltage:
3.3 V
Current:
10 mA
Power Consumption:
100 W
Programming Endurance:
10k Cycles
Operating Temperature:
-40 to 105 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
48 pin ceramic
Application:
Boot Code Storage for Microcontrollers and Microprocessors, FPGA Configuration Storage
more info
Description:40 Mb, radiation hardened by design, high performance CMOS static RAM multichip module (MCM) that is functionally compatible with traditional 1Mx39 SRAM devices.
Memory Type:
RAM
Storage Capacity:
40 Mb
Volatility:
Volatile
Read Access Time:
20 ns
Write Access Time:
10 ns
Bit Size:
39 Bits
Output Waveform:
CMOS
Radiation Dose:
100 krad(Si)
Standard:
QML-Q, QML-Q+, QML-V
Voltage:
1.7 to 3.6 V
Current:
± 10 mA
Power Consumption:
3.3 W
Operating Temperature:
-55 to 105 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
132-Pin Side-Brazed Dual Cavity Ceramic Quad Flatpack
Application:
Microprocessors, microcontrollers, FPGAs
more info
Description:80 Mb, radiation hardened by design, high performance CMOS static RAM multichip module (MCM)
Memory Type:
RAM
Storage Capacity:
80 Mb
Volatility:
Volatile
Read Access Time:
20 ns
Write Access Time:
10 ns
Bit Size:
39 Bits
Output Waveform:
CMOS
Radiation Dose:
100 krad(Si)
Standard:
QML-Q, QML-Q+, QML-V
Voltage:
1.7 to 3.6 V
Current:
± 10 mA
Power Consumption:
2 W
Operating Temperature:
-55 to 105 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
132-Pin Side-Brazed Dual Cavity Ceramic Quad Flatpack
Application:
Microprocessors, microcontrollers, FPGAs
more info

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