Space Qualified Memory - Page 10

140 Space Qualified Memory from 8 Manufacturers meet your specification.
Description:512K x 8 Radiation Hardened Static RAM is a high performance 524,288 word x 8-bit static random access memory.
Memory Type:
SRAM
Storage Capacity:
512 Mb
Volatility:
Volatile
Write Access Time:
7 ns
Bit Size:
512K x 8 Bits
Output Waveform:
CMOS
Radiation Dose:
1x106 rad(Si)
Soft Error Rate:
1x10-12 upsets/bit-day, 2x10-12 upsets/bit-day
Dose Rate Upset:
1x10-10 upsets/bit-day
Dose Rate Survivability:
1x1012 rad(Si)/s
Voltage:
1.8 to 3.3 V
Current:
15 mA
Power Consumption:
80 mW
Operating Temperature:
-55 to 125 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
36-Lead Ceramic Flat Pack
Application:
Space and military
more info
Description:2M x 8 Radiation Hardened Static RAM is a high performance 2,097,152 word x 8-bit static random access memory
Memory Type:
SRAM
Storage Capacity:
16 Mb
Volatility:
Volatile
Write Access Time:
9 ns
Bit Size:
2M x 8 Bits
Output Waveform:
CMOS
Radiation Dose:
3x105 and 1x106 rad(Si)
Soft Error Rate:
1x10-12 upsets/bit-day, 2x10-12 upsets/bit-day
Dose Rate Upset:
1x10-10 upsets/bit-day
Dose Rate Survivability:
1x1012 rad(Si)/s
Voltage:
1.8 to 3.3 V
Current:
15 mA
Power Consumption:
150 mW
Operating Temperature:
-55 to 125 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
40-Lead Ceramic Flat Pack
Application:
Space and military
more info
Description:512k x 32 Radiation Hardened Static RAM is a high performance 524,288 word x 32-bit static random access memory
Memory Type:
SRAM
Storage Capacity:
512 Mb
Volatility:
Volatile
Write Access Time:
9 ns
Bit Size:
512K x 32 Bits
Output Waveform:
CMOS
Radiation Dose:
3x105 and 1x106 rad(Si)
Soft Error Rate:
1x10-12 upsets/bit-day, 2x10-12 upsets/bit-day
Dose Rate Upset:
1x10-10 upsets/bit-day
Dose Rate Survivability:
1x1012 rad(Si)/s
Mass:
7 gms
Voltage:
1.5 to 3.3 V
Current:
15 mA
Power Consumption:
300 mW
Operating Temperature:
-55 to 125 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
86-Lead Ceramic Flat Pack
Application:
Space and military
Dimension:
21.67 x 28.91 x 4.01 mm
more info
Description:Multi-Chip Module (MCM), 2M x 32 Radiation Hardened Static RAM is a high performance 2,097,152 word x 32-bit static random access memory MCM
Memory Type:
SRAM
Storage Capacity:
32 Mb
Volatility:
Volatile
Write Access Time:
9 ns
Bit Size:
32 Bits
Output Waveform:
CMOS
Radiation Dose:
3x105 and 1x106 rad(Si)
Mass:
11.3 gms
Voltage:
1.8 to 3.3 V
Current:
15 mA
Power Consumption:
375 mW
Operating Temperature:
-55 to 125 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
86-Lead Ceramic Flat Pack
Application:
Space and military
Dimension:
24.49 x 31.24 x 4.77 mm
more info
SKU:UT28F256LVQLE
Memory Type:
PROM
Storage Capacity:
32 Mb
Volatility:
Non-Volatile
Read Access Time:
65 ns
Bit Size:
256kb, 32k x 8 bit
Output Waveform:
TTL, CMOS
Radiation Dose:
100 krad to 1 Mkrad(Si)
Voltage:
3 to 3.6 V
Current:
50 mA
Power Consumption:
40 mW
Operating Temperature:
-55 to 125 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
28-lead
Application:
Boot Code Storage for Microcontrollers and Microprocessors
more info
SKU:UT28F256QLE
Memory Type:
PROM
Storage Capacity:
32 Mb
Volatility:
Non-Volatile
Read Access Time:
45 ns
Bit Size:
256kb, 32k x 8 bit
Output Waveform:
TTL, CMOS
Radiation Dose:
100 krad to 1 Mkrad(Si)
Standard:
JEDEC 132
Voltage:
5 V
Current:
80 mA
Power Consumption:
1.5 W (Power Dissipation)
Programming Endurance:
3 to 40 k Cycles
Operating Temperature:
-55 to 125 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
28-lead, BGA
Application:
Solid-State Drives, Solid-State Recorders, Reconfigurable Computing, Imaging and Communications Data Buffering, Space Computing
more info
SKU:UT81NDQ512G8T
Memory Type:
NAND Flash
Storage Capacity:
1 Gb
Volatility:
Non-Volatile
Read Access Time:
3 ns (Clock Rate)
Bit Size:
8 Bits
Radiation Dose:
30 to 50 krad (Si)
Mass:
0.534 gms
Standard:
JEDEC 132
Voltage:
2.7 to 3.6 V
Power Consumption:
300 mW
Programming Endurance:
3000 to 40000 Cycles
Package:
132-ball BGA
Application:
Space, Systems and imaging and Communications
more info
SKU:UT81NFR128M8
Memory Type:
NOR Flash, SRAM
Storage Capacity:
128 Mb
Volatility:
Non-Volatile, Volatile
Read Access Time:
60 ns
Write Access Time:
40 ns
Bit Size:
128M x 8-bits or 64M x 16 Bits
Output Waveform:
CMOS
Data Retention:
10 Years
Radiation Dose:
300 krad(Si)
Standard:
QML-Q, QML-Q+, QML-V
Voltage:
2.25 to 3.6 V
Current:
± 10 mA
Power Consumption:
22.5 W (Power Dissipation)
Programming Endurance:
100k Cycles
Operating Temperature:
-55 to 105 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
142 pin CCGA, CBGA, and CLGA
Application:
Space, Boot memory for microprocessors and FPGAs
more info
SKU:UT81NFR1G1
Memory Type:
NOR Flash, SRAM
Storage Capacity:
1 Gb
Volatility:
Non-Volatile, Volatile
Bit Size:
1G x 1-bits
Data Retention:
10 Years
Radiation Dose:
300 krad(Si)
Standard:
QML-Q, QML-Q+, QML-V
Voltage:
2.25 to 3.6 V
Current:
± 10 mA
Power Consumption:
22.5 W (Power Dissipation)
Programming Endurance:
100k Cycles
Operating Temperature:
-55 to 105 Degree C
Storage Temperature:
-55 to 150 Degree C
Package:
142 pin CCGA, CBGA, and CLGA
Application:
Space, Boot memory for microprocessors and FPGAs
more info
SKU:UT81NFR64M1
Memory Type:
NOR Flash
Storage Capacity:
64 Mb
Volatility:
Non-Volatile
Bit Size:
64M x 1-bits
Data Retention:
10 Years
Radiation Dose:
300 krad(Si)
Standard:
QML-Q, QML-V
Voltage:
1.7 to 3.6 V
Current:
± 10 mA
Programming Endurance:
100k Cycles
Operating Temperature:
-55 to 125 Degree C
Storage Temperature:
-55 to 150 Degree C
Package:
20 pin ceramic
Application:
Space, Boot memory for microprocessors and FPGAs
more info

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