Space Qualified Memory - Page 5

52 Space Qualified Memory from 2 Manufacturers meet your specification.
Selected Filters Reset All
  • Manufacturers: Infineon Technologies, Honeywell Aerospace
Description:128K x 8 Radiation Hardened Static RAM is a high performance 131,072 word x 8-bit
Memory Type:
SRAM
Storage Capacity:
128 Mb
Volatility:
Volatile
Read Access Time:
16 ns
Write Access Time:
16 ns
Bit Size:
128K x 8 Bits
Output Waveform:
TTL, RICMOS, CMOS
Radiation Dose:
1x106 rad(Si)
Soft Error Rate:
1x10-10 upsets/bit-day
Dose Rate Upset:
1x1011rad(Si)/s
Dose Rate Survivability:
1x1012 rad(Si)/s
Voltage:
5 V
Current:
25 mA
Power Consumption:
5 to 1000 mW
Operating Temperature:
-55 to 125 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
32-Lead CFP, 40-Lead CFP
Application:
Space and military, Defense
more info
Description:32K x 8 Radiation Hardened Static RAM is a high performance 32,768 word x 8-bit static random access memory
Memory Type:
SRAM
Storage Capacity:
32 Mb
Volatility:
Volatile
Read Access Time:
17 ns
Write Access Time:
25 ns
Bit Size:
32K x 8 Bits
Output Waveform:
TTL, CMOS
Radiation Dose:
1x106 rad(Si)
Soft Error Rate:
1x10-10 upsets/bit-day
Dose Rate Upset:
1x109 rad(Si)/s
Dose Rate Survivability:
1x1011 rad(Si)/s
Voltage:
5 V
Current:
25 mA
Power Consumption:
600 mW (at 40 MHz)
Operating Temperature:
-55 to 125 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
28-Lead CFP, 28-Lead DIP, 36-Lead CFP—Bottom Braze, 36-Lead CFP –Top Braze
Application:
Space and military
more info
SKU:HX6356
Memory Type:
SRAM
Storage Capacity:
32 Mb
Volatility:
Volatile
Read Access Time:
14 ns
Write Access Time:
25 ns
Bit Size:
32K x 8 Bits
Output Waveform:
TTL, RICMOS, CMOS
Radiation Dose:
1x106 rad(Si)
Soft Error Rate:
1x10-10 upsets/bit-day
Dose Rate Upset:
1x109 rad(Si)/s
Dose Rate Survivability:
1x1011 rad(Si)/s
Voltage:
5 V
Current:
25 mA
Power Consumption:
5 to 800 mW
Operating Temperature:
-55 to 125 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
36-Lead CFP—Bottom Braze, 36-Lead CFP –Top Braze
Application:
Space and military, Defense
more info
Description:512K x 8 Radiation Hardened Static RAM is a high performance 524,288 word x 8-bit static random access memory.
Memory Type:
SRAM
Storage Capacity:
512 Mb
Volatility:
Volatile
Read Access Time:
20 ns
Write Access Time:
20 ns
Bit Size:
512K x 8 Bits
Output Waveform:
RICMOS, CMOS
Radiation Dose:
1x106 rad(Si)
Soft Error Rate:
1x10-10 upsets/bit-day
Dose Rate Upset:
1x10-10 upsets/bit-day
Dose Rate Survivability:
1x1012 rad(Si)/s
Voltage:
3.3 V
Current:
25 mA
Power Consumption:
5 to 710 mW
Operating Temperature:
-55 to 125 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
36-Lead Ceramic Flat Pack
Application:
Space and military
more info
Description:HX6409 is a 4096-word by 9-bit memory array; the HX6218 is a 2048-word by 18-bit memory array; and the HX6136 is a 1024-word by 36-bit memory array
Memory Type:
SRAM
Storage Capacity:
36 Mb
Volatility:
Volatile
Read Access Time:
36 ns
Write Access Time:
36 ns
Bit Size:
36 Bits
Output Waveform:
RICMOS, CMOS
Radiation Dose:
1x106 rad(Si)
Soft Error Rate:
1x10-10 upsets/bit-day
Dose Rate Upset:
1x109 rad(Si)/s
Dose Rate Survivability:
1x1011 rad(Si)/s
Voltage:
5 V
Operating Temperature:
-55 to 125 Degree C
Package:
32-Lead CFP, 68-Lead CQFP, 132-Lead CQFP
more info
SKU:HXNV0100
Memory Type:
MRAM
Storage Capacity:
64 Mb
Volatility:
Non-Volatile
Read Access Time:
80 ns
Write Access Time:
140 ns
Bit Size:
64K x 16 Bits
Output Waveform:
CMOS
Data Retention:
15 Years
Radiation Dose:
3x105 and 1x106 rad (Si)
Soft Error Rate:
1x10-10 upsets/bit-day
Dose Rate Upset:
1x109 rad(Si)/s
Dose Rate Survivability:
1x1012 rad(Si)/s
Standard:
MIL-PRF-38535, MIL-STD-883
Voltage:
1.8 to 3.3 V
Current:
90 mA
Power Consumption:
2.5 W
Programming Endurance:
1x1015 Cycles
Operating Temperature:
-40 to 105 Degree C
Storage Temperature:
-55 to 150 Degree C
Package:
64 Lead Shielded Ceramic Quad Flat Pack
Application:
Space and military
more info
SKU:HXNV01600
Memory Type:
MRAM
Storage Capacity:
16 Mb
Volatility:
Non-Volatile
Read Access Time:
95 ns
Write Access Time:
140 ns
Output Waveform:
CMOS
Data Retention:
15 Years
Radiation Dose:
1x106 rad (Si), 3x105 rad (Si)
Soft Error Rate:
1x10-10 upsets/bit-day
Dose Rate Upset:
1x1010 rad(Si)/s
Dose Rate Survivability:
1x1012 rad(Si)/s
Voltage:
2.5 to 3.3 V
Current:
90 mA
Power Consumption:
1.25 W (Power Dissipation)
Programming Endurance:
1x1015 Cycles
Operating Temperature:
-40 to 125 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
76 Lead Shielded Ceramic Quad Flat Pack
Application:
Space and military
more info
Description:64 Megabit Multi-chip Module (MCM) radiation hardened low power non-volatile MagnetoResistive Random Access Memory (MRAM)
Memory Type:
MRAM
Storage Capacity:
64 Mb
Volatility:
Non-Volatile
Read Access Time:
100 ns
Write Access Time:
150 ns
Bit Size:
8 and 16 Bits
Output Waveform:
CMOS
Data Retention:
15 Years
Radiation Dose:
3x105 and 1x106 rad(Si)
Soft Error Rate:
1x10-10 upsets/bit-day, 1x10-11 upsets/bit-day
Dose Rate Upset:
1x109 rad(Si)/s
Dose Rate Survivability:
1x1012 rad(Si)/s
Voltage:
2.5 to 3.3 V
Current:
90 mA
Power Consumption:
4.1 W (Power Dissipation)
Programming Endurance:
1x1015 Cycles
Operating Temperature:
-40 to 125 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
112-Lead Ceramic Flat Pack
Application:
Space and military
more info
Description:512K x 8 Radiation Hardened Static RAM is a high performance 524,288 word x 8-bit static random access memory.
Memory Type:
SRAM
Storage Capacity:
512 Mb
Volatility:
Volatile
Write Access Time:
7 ns
Bit Size:
512K x 8 Bits
Output Waveform:
CMOS
Radiation Dose:
1x106 rad(Si)
Soft Error Rate:
1x10-12 upsets/bit-day, 2x10-12 upsets/bit-day
Dose Rate Upset:
1x10-10 upsets/bit-day
Dose Rate Survivability:
1x1012 rad(Si)/s
Voltage:
1.8 to 3.3 V
Current:
15 mA
Power Consumption:
80 mW
Operating Temperature:
-55 to 125 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
36-Lead Ceramic Flat Pack
Application:
Space and military
more info
Description:2M x 8 Radiation Hardened Static RAM is a high performance 2,097,152 word x 8-bit static random access memory
Memory Type:
SRAM
Storage Capacity:
16 Mb
Volatility:
Volatile
Write Access Time:
9 ns
Bit Size:
2M x 8 Bits
Output Waveform:
CMOS
Radiation Dose:
3x105 and 1x106 rad(Si)
Soft Error Rate:
1x10-12 upsets/bit-day, 2x10-12 upsets/bit-day
Dose Rate Upset:
1x10-10 upsets/bit-day
Dose Rate Survivability:
1x1012 rad(Si)/s
Voltage:
1.8 to 3.3 V
Current:
15 mA
Power Consumption:
150 mW
Operating Temperature:
-55 to 125 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
40-Lead Ceramic Flat Pack
Application:
Space and military
more info

FiltersReset All

Mission

Space Heritage

Orbit

Memory Type

Storage Capacity (Mb)

Apply

Volatility

Read Access Time (ns)

Apply

Write Access Time (ns)

Apply

Mass (gms)

Apply

Standard

Package Type