Space Qualified Memory - Page 6

59 Space Qualified Memory from 2 Manufacturers meet your specification.
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  • Manufacturers: Infineon Technologies, CAES
SKU:UT8R128K32
Memory Type:
RAM
Storage Capacity:
4 Mb
Volatility:
Volatile
Read Access Time:
20 ns
Write Access Time:
10 ns
Output Waveform:
TTL, CMOS
Radiation Dose:
100 krad(Si)
Standard:
QML-Q, QML-V
Voltage:
1.8 to 3.3 V
Power Consumption:
5 W (Power Dissipation)
Operating Temperature:
-55 to 125 Degree C
Package:
68-lead Ceramic quad flatpack
Application:
Buffer memory for calibration, configuration and lookup table data
more info
Description:40 Mb, radiation hardened by design, high performance CMOS static RAM multichip module (MCM) that is functionally compatible with traditional 1Mx39 SRAM devices.
Memory Type:
RAM
Storage Capacity:
40 Mb
Volatility:
Volatile
Read Access Time:
20 ns
Write Access Time:
10 ns
Bit Size:
39 Bits
Output Waveform:
CMOS
Radiation Dose:
100 krad(Si)
Standard:
QML-Q, QML-Q+, QML-V
Voltage:
1.7 to 3.6 V
Current:
± 10 mA
Power Consumption:
3.3 W
Operating Temperature:
-55 to 105 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
132-Pin Side-Brazed Dual Cavity Ceramic Quad Flatpack
Application:
Microprocessors, microcontrollers, FPGAs
more info
Description:80 Mb, radiation hardened by design, high performance CMOS static RAM multichip module (MCM)
Memory Type:
RAM
Storage Capacity:
80 Mb
Volatility:
Volatile
Read Access Time:
20 ns
Write Access Time:
10 ns
Bit Size:
39 Bits
Output Waveform:
CMOS
Radiation Dose:
100 krad(Si)
Standard:
QML-Q, QML-Q+, QML-V
Voltage:
1.7 to 3.6 V
Current:
± 10 mA
Power Consumption:
2 W
Operating Temperature:
-55 to 105 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
132-Pin Side-Brazed Dual Cavity Ceramic Quad Flatpack
Application:
Microprocessors, microcontrollers, FPGAs
more info
Description:160 Mb, radiation hardened by design, high performance CMOS static RAM multichip module (MCM)
Memory Type:
RAM
Storage Capacity:
160 Mb
Volatility:
Volatile
Read Access Time:
20 ns
Write Access Time:
10 ns
Bit Size:
39 Bits
Output Waveform:
CMOS
Radiation Dose:
100 krad(Si)
Standard:
QML-Q, QML-Q+, QML-V
Voltage:
1.7 to 3.6 V
Current:
± 10 mA
Power Consumption:
1.3 W
Operating Temperature:
-55 to 105 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
132-Pin Side-Brazed Dual Cavity Ceramic Quad Flatpack
Application:
Microprocessors, microcontrollers, FPGAs
more info
SKU:UT8R512K8
Memory Type:
SRAM
Storage Capacity:
512 Mb
Volatility:
Volatile
Read Access Time:
15 ns
Write Access Time:
15 ns
Output Waveform:
TTL, CMOS
Radiation Dose:
100 krad(Si), 1.0E9 rad(Si)/sec (Upset), 1.0E11 rad(Si)/sec (Latchup)
Mass:
3.762 gms
Standard:
QML-Q, QML-V
Voltage:
1.8 to 3.3 V
Current:
±5 mA
Power Consumption:
1.2 W
Operating Temperature:
-55 to 125 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
36-Pin Ceramic
Application:
Ideal for fault tolerant designs for low earth orbits
more info
Description:SDRAM multi-chip module (MCM). The device is 2.5Gb in density and organized as 64Mx40 (16M x 40 x 4 banks)
Memory Type:
SDRAM
Storage Capacity:
2.5 Gb
Volatility:
Volatile
Output Waveform:
LVTTL
Radiation Dose:
100 krad(Si)
Standard:
QML-Q, QML-Q+
Voltage:
3.3 V
Power Consumption:
4 W
Operating Temperature:
-40 to 105 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
128-lead Ceramic Quad Flatpack, deep side-braze
Application:
Ideal for LEON Processors (UT700, GR712)
more info
Description:SDRAM multi-chip module (MCM). The device is 3.0Gb in density and organized as 64Mx48 (16M x 48 x 4 banks)
Memory Type:
SDRAM
Storage Capacity:
3 Gb
Volatility:
Volatile
Output Waveform:
LVTTL
Radiation Dose:
100 krad(Si)
Standard:
QML-Q, QML-Q+
Voltage:
3.3 V
Power Consumption:
2 W
Operating Temperature:
-40 to 105 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
128-lead Ceramic Quad Flatpack, shallow side-braze
Application:
Ideal for fault tolerant designs in harsh space environments
more info
Description:4 Mb, radiation tolerant, asynchronous SRAM, which is compatible with industry-standard 512K x 8 SRAMs, LEO
Memory Type:
SRAM
Storage Capacity:
4 Mb
Volatility:
Volatile
Read Access Time:
20 ns
Write Access Time:
20 ns
Bit Size:
8 Bits
Output Waveform:
TTL, CMOS
Radiation Dose:
100 krad(Si)
Mass:
3.831 gms
Standard:
QML-Q, QML-V
Voltage:
5 V
Current:
± 10 mA
Power Consumption:
1 W
Operating Temperature:
-55 to 125 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
36-Pin Ceramic Flatpack
Application:
Ideal for fault tolerant designs for low earth orbits
more info
SKU:UT9Q512K32E
Memory Type:
SRAM
Storage Capacity:
16 Mb
Volatility:
Volatile
Read Access Time:
25 ns
Output Waveform:
TTL, CMOS
Radiation Dose:
100 krad(Si)
Mass:
11 gms
Standard:
QML-Q, QML-V
Voltage:
5 V
Current:
± 10 mA
Power Consumption:
1 W
Operating Temperature:
-40 to 105 Degree C
Storage Temperature:
-65 to 150 Degree C
Package:
68-Pin Ceramic Quad Flatpack
Application:
Ideal for fault tolerant designs for low earth orbits
more info

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