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Space Qualified MOSFETs from Manufacturers in Germany - Page 14

302 Space Qualified MOSFETs from 1 Manufacturer meet your specification.
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302 Space Qualified MOSFETs from 1 Manufacturer
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Page 14 of 21
IRHLUBC770Z4 Image
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Infineon Technologies - IRHLUBC770Z4

Space Qualified MOSFETs from Infineon Technologies
Description:60 V Radiation Hardened N-CShannel MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Space Standard:
MIL-PRF-19500, MIL-STD-750
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
0.8 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
680 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.6 W
Temperature operating range:
-55 to 150 Degree C
Package:
UBC
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IRHF7130 Image
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Infineon Technologies - IRHF7130

Space Qualified MOSFETs from Infineon Technologies
Description:100 V, 50 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Space Standard:
MIL-PRF-19500, MIL-STD-750
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
8 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
185 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
25 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-205AF
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IRHNM57110 Image
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Infineon Technologies - IRHNM57110

Space Qualified MOSFETs from Infineon Technologies
Description:100 V, 15 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Space Standard:
MIL-STD-750, MIL-PRF-19500
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
6.9 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
15 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
23 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD-0.2
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IRHY67C30CM Image
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Infineon Technologies - IRHY67C30CM

Space Qualified MOSFETs from Infineon Technologies
Description:600 V, 52 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Space Standard:
MIL-STD-750, MIL-PRF-19500
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
3.4 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
3100 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-257AA
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IRHNJ67C30 Image
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Infineon Technologies - IRHNJ67C30

Space Qualified MOSFETs from Infineon Technologies
Description:600 V, 52 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Space Standard:
MIL-STD-750
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
3.4 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
3100 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD-0.5
more info
IRHF6S7230 Image
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Infineon Technologies - IRHF6S7230

Space Qualified MOSFETs from Infineon Technologies
Description:200 V, 45 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Space Standard:
MIL-STD-750
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
9.1 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
145 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
25 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-205AF
more info
IRHLNJ797034 Image
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Infineon Technologies - IRHLNJ797034

Space Qualified MOSFETs from Infineon Technologies
Description:Single P-channel Rad hard MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Space Standard:
MIL-PRF-19500/757, MIL-STD-750
Transistor Polarity:
P-Channel
Number of Channel:
Single
Continous Drain Current:
-22 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
72 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
57 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD-0.5
more info
IRHN9150 Image
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Infineon Technologies - IRHN9150

Space Qualified MOSFETs from Infineon Technologies
Description:-100 V, 200 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Space Standard:
MIL-PRF-19500/684, MIL-STD-750
Transistor Polarity:
P-Channel
Number of Channel:
Single
Continous Drain Current:
-22 A
Drain Source Breakdown Voltage:
-100 V
Drain Source Resistance:
85 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
150 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD-1
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IRH9150 Image
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Infineon Technologies - IRH9150

Space Qualified MOSFETs from Infineon Technologies
Description:-100 V, 85 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Space Standard:
MIL-STD-750
Transistor Polarity:
P-Channel
Number of Channel:
Single
Continous Drain Current:
-22 A
Drain Source Breakdown Voltage:
-100 V
Drain Source Resistance:
85 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
150 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-204AE
more info
IRHLUB7970Z4 Image
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Infineon Technologies - IRHLUB7970Z4

Space Qualified MOSFETs from Infineon Technologies
Description:Radiation Hardened Power MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Space Standard:
MIL-STD-750, MIL-PRF-19500
Transistor Polarity:
P-Channel
Number of Channel:
Single
Continous Drain Current:
-0.53 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
1400 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.57 W
Temperature operating range:
-55 to 150 Degree C
Package:
UB
more info
IRHM9150 Image
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Infineon Technologies - IRHM9150

Space Qualified MOSFETs from Infineon Technologies
Description:-100 V, 200 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Space Standard:
MIL-STD-750, MIL-PRF-19500/662
Transistor Polarity:
P-Channel
Number of Channel:
Single
Continous Drain Current:
-22 A
Drain Source Breakdown Voltage:
-100 V
Drain Source Resistance:
85 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
150 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA
more info
IRHLYS797034CM Image
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Infineon Technologies - IRHLYS797034CM

Space Qualified MOSFETs from Infineon Technologies
Description:-60 V, 36 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Space Standard:
MIL-PRF-19500/757, MIL-STD-750
Transistor Polarity:
P-Channel
Number of Channel:
Single
Continous Drain Current:
-20 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
74 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-257AA
more info
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IRHLYS77034CM Image
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Infineon Technologies - IRHLYS77034CM

Space Qualified MOSFETs from Infineon Technologies
Description:60 V, 34 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Space Standard:
MIL-PRF-19500, MIL-STD-750
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
20 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
45 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-257AA Low Ohmic
more info
IRHNJ7130 Image
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Infineon Technologies - IRHNJ7130

Space Qualified MOSFETs from Infineon Technologies
Description:100 V, 40 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Space Standard:
MIL-PRF-19500, MIL-STD-750
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
14.4 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
200 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD-0.5
more info
IRHNJ7230 Image
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Infineon Technologies - IRHNJ7230

Space Qualified MOSFETs from Infineon Technologies
Description:200 V, 50 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Space Standard:
MIL-PRF-19500, MIL-STD-750
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
9.4 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
490 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD-0.5
more info
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