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Space Qualified MOSFETs from Manufacturers in Germany - Page 17

302 Space Qualified MOSFETs from 1 Manufacturer meet your specification.
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302 Space Qualified MOSFETs from 1 Manufacturer
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Page 17 of 21
IRHF57230SE Image
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Infineon Technologies - IRHF57230SE

Space Qualified MOSFETs from Infineon Technologies
Description:200 V, 47 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Space Standard:
MIL-PRF-19500/706, MIL-STD-750
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
6.7 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
240 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
25 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-205AF
more info
IRHN7230 Image
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Infineon Technologies - IRHN7230

Space Qualified MOSFETs from Infineon Technologies
Description:200 V, 50 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
9 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
490 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD-1
more info
IRHNJ9A7234 Image
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Infineon Technologies - IRHNJ9A7234

Space Qualified MOSFETs from Infineon Technologies
Description:250 V, 34 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Space Standard:
MIL-STD-750, MIL-PRF-19500
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
17 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
110 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD-0.5
more info
IRHYS9A7234CM Image
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Infineon Technologies - IRHYS9A7234CM

Space Qualified MOSFETs from Infineon Technologies
Description:250 V, 34 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Space Standard:
MIL-STD-750, MIL-PRF-19500
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
17 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
110 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-257AA
more info
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IRHYB67230CM Image
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Infineon Technologies - IRHYB67230CM

Space Qualified MOSFETs from Infineon Technologies
Description:200 V, 42 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Space Standard:
MIL-STD-750
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
16 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
130 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-257AA
more info
IRHE57133SE Image
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Infineon Technologies - IRHE57133SE

Space Qualified MOSFETs from Infineon Technologies
Description:130 V, 48 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
9 A
Drain Source Breakdown Voltage:
130 V
Drain Source Resistance:
130 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
25 W
Temperature operating range:
-55 to 150 Degree C
Package:
18-pin LCC
more info
IRHM7250 Image
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Infineon Technologies - IRHM7250

Space Qualified MOSFETs from Infineon Technologies
Description:200 V, 170 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Space Standard:
MIL-PRF-19500, MIL-STD-750
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
26 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
110 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
150 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA
more info
IRHY7230CM Image
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Infineon Technologies - IRHY7230CM

Space Qualified MOSFETs from Infineon Technologies
Description:200 V, 50 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
9.4 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
490 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-257AA
more info
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IRHMJ57160 Image
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Infineon Technologies - IRHMJ57160

Space Qualified MOSFETs from Infineon Technologies
Description:100 V, 160 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
35 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
18 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA Tabless SMD
more info
IRHMJ57260SE Image
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Infineon Technologies - IRHMJ57260SE

Space Qualified MOSFETs from Infineon Technologies
Description:200 V, 165 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
35 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
49 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
208 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA Tabless SMD
more info
IRHMJ7250 Image
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Infineon Technologies - IRHMJ7250

Space Qualified MOSFETs from Infineon Technologies
Description:200 V, 170 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
26 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
110 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
150 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA Tabless SMD
more info
IRHNJ5S97130 Image
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Infineon Technologies - IRHNJ5S97130

Space Qualified MOSFETs from Infineon Technologies
Description:-100 V, 45 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channel:
Single
Continous Drain Current:
-12.5 A
Drain Source Breakdown Voltage:
-100 V
Drain Source Resistance:
205 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD-0.5
more info
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IRHNA7260SE Image
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Infineon Technologies - IRHNA7260SE

Space Qualified MOSFETs from Infineon Technologies
Description:200 V, 290 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
43 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
77 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
300 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD-2
more info
IRHMS6S7264 Image
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Infineon Technologies - IRHMS6S7264

Space Qualified MOSFETs from Infineon Technologies
Description:250 V N-Channel Radiation Hardened Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Space Standard:
MIL-STD-750
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
45 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
41 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
208 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA
more info
IRHMS67164 Image
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Infineon Technologies - IRHMS67164

Space Qualified MOSFETs from Infineon Technologies
Description:150 V, 230 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Space Standard:
MIL-PRF-19500/753, MIL-STD-750
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
45 A
Drain Source Breakdown Voltage:
150 V
Drain Source Resistance:
19 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
208 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA Low Ohmic
more info
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