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Space Qualified MOSFETs from Manufacturers in Germany - Page 2

302 Space Qualified MOSFETs from 1 Manufacturer meet your specification.
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302 Space Qualified MOSFETs from 1 Manufacturer
302 Products from 1 Manufacturer
Page 2 of 21
IRHLG7S7214 Image
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Infineon Technologies - IRHLG7S7214

Space Qualified MOSFETs from Infineon Technologies
Description:250 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Space Standard:
MIL-STD-750, MIL-PRF-19500
Transistor Polarity:
N-Channel
Number of Channel:
Quad
Continous Drain Current:
0.8 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
1100 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
1.4 W
Temperature operating range:
-55 to 150 Degree C
Package:
MO-036AB
more info
IRHQ7110 Image
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Infineon Technologies - IRHQ7110

Space Qualified MOSFETs from Infineon Technologies
Description:100 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Space Standard:
MIL-STD-750, MIL-PRF-19500
Transistor Polarity:
N-Channel
Number of Channel:
Quad
Continous Drain Current:
3 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
600 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
12 W
Temperature operating range:
-55 to 150 Degree C
Package:
28-pin LCC
more info
IRHLQ77214 Image
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Infineon Technologies - IRHLQ77214

Space Qualified MOSFETs from Infineon Technologies
Description:250 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channel:
Quad
Continous Drain Current:
2.6 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
1000 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
12 W
Temperature operating range:
-55 to 150 Degree C
Package:
28-pin LCC
more info
IRHSNA57Z60 Image
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Infineon Technologies - IRHSNA57Z60

Space Qualified MOSFETs from Infineon Technologies
Description:30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Space Standard:
MIL-STD-750
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
75 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
3.5 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD-2
more info
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IRHQ57110 Image
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Infineon Technologies - IRHQ57110

Space Qualified MOSFETs from Infineon Technologies
Description:100 V N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Space Standard:
MIL-STD-750, MIL-PRF-19500
Transistor Polarity:
N-Channel
Number of Channel:
Quad
Continous Drain Current:
4.6 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
310 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
12 W
Temperature operating range:
-55 to 150 Degree C
Package:
28-pin LCC
more info
IRHG7110 Image
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Infineon Technologies - IRHG7110

Space Qualified MOSFETs from Infineon Technologies
Description:100 V N-Channel Power MOSFET for Space Applications

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Space Standard:
MIL-STD-750
Transistor Polarity:
N-Channel
Number of Channel:
Quad
Continous Drain Current:
1 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
700 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.4 W
Temperature operating range:
-55 to 150 Degree C
Package:
MO-036AB
more info
IRHLG77110 Image
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Infineon Technologies - IRHLG77110

Space Qualified MOSFETs from Infineon Technologies
Description:100 V N-Channel Radiation Hardened Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Space Standard:
MIL-STD-750
Transistor Polarity:
N-Channel
Number of Channel:
Quad
Continous Drain Current:
1.8 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
285 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
1.4 W
Temperature operating range:
-55 to 150 Degree C
Package:
MO-036AB
more info
IRHQ597110 Image
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Infineon Technologies - IRHQ597110

Space Qualified MOSFETs from Infineon Technologies
Description:-100 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Space Standard:
MIL-STD-750
Transistor Polarity:
P-Channel
Number of Channel:
Quad
Continous Drain Current:
-2.8 A
Drain Source Breakdown Voltage:
-100 V
Drain Source Resistance:
1200 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
12 W
Temperature operating range:
-55 to 150 Degree C
Package:
28-pin LCC
more info
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IRHLG7S7110 Image
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Infineon Technologies - IRHLG7S7110

Space Qualified MOSFETs from Infineon Technologies
Description:100 V N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Space Standard:
MIL-STD-750
Transistor Polarity:
N-Channel
Number of Channel:
Quad
Continous Drain Current:
1.8 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
330 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
1.4 W
Temperature operating range:
-55 to 150 Degree C
Package:
MO-036AB
more info
IRHLUC770Z4 Image
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Infineon Technologies - IRHLUC770Z4

Space Qualified MOSFETs from Infineon Technologies
Description:Radiation Hardened N-Channel MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Space Standard:
MIL-STD-750, MIL-PRF-19500
Transistor Polarity:
N-Channel
Number of Channel:
Dual
Continous Drain Current:
0.89 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
750 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
1 W
Temperature operating range:
-55 to 150 Degree C
Package:
LCC-6
more info
IRHMB57260SE Image
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Infineon Technologies - IRHMB57260SE

Space Qualified MOSFETs from Infineon Technologies
Description:200 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Space Standard:
MIL-PRF-19500, MIL-STD-750
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
45 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
44 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
208 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA Tabless
more info
IRHLUBC7970Z4 Image
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Infineon Technologies - IRHLUBC7970Z4

Space Qualified MOSFETs from Infineon Technologies
Description:-60 V Radiation Hardened P-Channel MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Space Standard:
MIL-PRF-19500, MIL-STD-750
Transistor Polarity:
P-Channel
Number of Channel:
Single
Continous Drain Current:
-0.53 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
1400 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0 to 0.57 W
Temperature operating range:
-55 to 150 Degree C
Package:
UBC
more info
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IRHF597130 Image
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Infineon Technologies - IRHF597130

Space Qualified MOSFETs from Infineon Technologies
Description:-100 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Space Standard:
MIL-STD-750
Transistor Polarity:
P-Channel
Number of Channel:
Single
Continous Drain Current:
-6.7 A
Drain Source Breakdown Voltage:
-100 V
Drain Source Resistance:
240 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
25 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-205AF
more info
IRHYS597Z30CM Image
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Infineon Technologies - IRHYS597Z30CM

Space Qualified MOSFETs from Infineon Technologies
Description:-30 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Space Standard:
MIL-STD-750, MIL-PRF-19500/732
Transistor Polarity:
P-Channel
Number of Channel:
Single
Continous Drain Current:
-20 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
72 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-257AA Low Ohmic
more info
IRHNA9160 Image
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Infineon Technologies - IRHNA9160

Space Qualified MOSFETs from Infineon Technologies
Description:-100 V Space-Qualified P-Channel Power MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Space Standard:
MIL-PRF-19500, MIL-STD-750
Transistor Polarity:
P-Channel
Number of Channel:
Single
Continous Drain Current:
-38 A
Drain Source Breakdown Voltage:
-100 V
Drain Source Resistance:
71 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
300 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD-2
more info
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