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Space Qualified MOSFETs from Manufacturers in Germany - Page 20

302 Space Qualified MOSFETs from 1 Manufacturer meet your specification.
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302 Space Qualified MOSFETs from 1 Manufacturer
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Page 20 of 21
IRHMB67260 Image
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Infineon Technologies - IRHMB67260

Space Qualified MOSFETs from Infineon Technologies
Description:200 V, 240 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Space Standard:
MIL-STD-750, MIL-PRF-19500
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
45 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
29 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
208 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA Tabless Low Ohmic
more info
IRHMB7260 Image
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Infineon Technologies - IRHMB7260

Space Qualified MOSFETs from Infineon Technologies
Description:200 V, 290 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Space Standard:
MIL-STD-750, MIL-PRF-19500
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
35 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
77 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA
more info
IRHNA57163SE Image
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Infineon Technologies - IRHNA57163SE

Space Qualified MOSFETs from Infineon Technologies
Description:130 V, 160 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Space Standard:
MIL-PRF-19500/684, MIL-STD-750
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
75 A
Drain Source Breakdown Voltage:
130 V
Drain Source Resistance:
13.5 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD-2
more info
IRHNJ9A7130 Image
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Infineon Technologies - IRHNJ9A7130

Space Qualified MOSFETs from Infineon Technologies
Description:100 V, 48 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Space Standard:
MIL-STD-750, MIL- PRF-19500/775
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
35 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
34 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD-0.5
more info
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IRHM57264SE Image
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Infineon Technologies - IRHM57264SE

Space Qualified MOSFETs from Infineon Technologies
Description:250 V, 45 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Space Standard:
MIL-STD-750
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
35 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
66 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA
more info
IRHM7064 Image
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Infineon Technologies - IRHM7064

Space Qualified MOSFETs from Infineon Technologies
Description:60 V, 270 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Space Standard:
MIL-STD-750, MIL-PRF-19500
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
35 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
21 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA
more info
IRHM7450SE Image
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Infineon Technologies - IRHM7450SE

Space Qualified MOSFETs from Infineon Technologies
Description:500 V, 140 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
12 A
Drain Source Breakdown Voltage:
500 V
Drain Source Resistance:
570 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
151 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA
more info
IRHF597230 Image
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Infineon Technologies - IRHF597230

Space Qualified MOSFETs from Infineon Technologies
Description:20 V Radiation Hardened Power MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Space Standard:
MIL-STD-750
Transistor Polarity:
P-Channel
Number of Channel:
Single
Continous Drain Current:
-4.5 A
Drain Source Breakdown Voltage:
-200 V
Drain Source Resistance:
540 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
25 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-205AF
more info
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IRHY9230CM Image
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Infineon Technologies - IRHY9230CM

Space Qualified MOSFETs from Infineon Technologies
Description:-200 V, 45 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Space Standard:
MIL-PRF-19500, MIL-STD-750
Transistor Polarity:
P-Channel
Number of Channel:
Single
Continous Drain Current:
-6.5 A
Drain Source Breakdown Voltage:
-200 V
Drain Source Resistance:
800 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-257AA
more info
IRHF9230 Image
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Infineon Technologies - IRHF9230

Space Qualified MOSFETs from Infineon Technologies
Description:-200 V, 45 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Space Standard:
MIL-PRF-19500/630, MIL-STD-750
Transistor Polarity:
P-Channel
Number of Channel:
Single
Continous Drain Current:
-4 A
Drain Source Breakdown Voltage:
-200 V
Drain Source Resistance:
920 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
25 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-205AF
more info
IRHMS597064 Image
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Infineon Technologies - IRHMS597064

Space Qualified MOSFETs from Infineon Technologies
Description:-60 V, 160 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Space Standard:
MIL-PRF-19500/733, MIL-STD-750
Transistor Polarity:
P-Channel
Number of Channel:
Single
Continous Drain Current:
-45 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
18 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
208 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA Low Ohmic
more info
IRHML597160 Image
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Infineon Technologies - IRHML597160

Space Qualified MOSFETs from Infineon Technologies
Description:-100 V, 170 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Space Standard:
MIL-PRF-19500/713, MIL-STD-750
Transistor Polarity:
P-Channel
Number of Channel:
Single
Continous Drain Current:
-45 A
Drain Source Breakdown Voltage:
-100 V
Drain Source Resistance:
50 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
208 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA Tabless SMD
more info
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IRHNS57064 Image
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Infineon Technologies - IRHNS57064

Space Qualified MOSFETs from Infineon Technologies
Description:60 V Radiation Hardened N-channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Space Standard:
MIL-PRF-19500/673, MIL-STD-750
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
75 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
5.6 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
SupIR-SMD
more info
IRHNS57163SE Image
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Infineon Technologies - IRHNS57163SE

Space Qualified MOSFETs from Infineon Technologies
Description:130 V, 160 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Space Standard:
MIL-PRF-19500/684, MIL-STD-750
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
75 A
Drain Source Breakdown Voltage:
130 V
Drain Source Resistance:
13.5 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
SupIR-SMD
more info
IRHY7130CM Image
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Infineon Technologies - IRHY7130CM

Space Qualified MOSFETs from Infineon Technologies
Description:100 V, 40 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Space Standard:
MIL-STD-750, MIL-PRF-19500
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
14.4 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
200 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-257AA
more info
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