1. Home
  2. Electrical / Electronic Components
  3. Space Qualified MOSFETs

Space Qualified MOSFETs from Manufacturers in Germany - Page 4

302 Space Qualified MOSFETs from 1 Manufacturer meet your specification.
Filters (1)
Selected Filters:
302 Space Qualified MOSFETs from 1 Manufacturer
302 Products from 1 Manufacturer
Page 4 of 21
IRHMS57163SE Image
 Download Datasheet  Request Information  Product Details

Infineon Technologies - IRHMS57163SE

Space Qualified MOSFETs from Infineon Technologies
Description:130 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Space Standard:
MIL-PRF-19500/685, MIL-STD-750
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
45 A
Drain Source Breakdown Voltage:
130 V
Drain Source Resistance:
15.5 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
208 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA Low Ohmic
more info
IRHMS57Z60 Image
 Download Datasheet  Request Information  Product Details

Infineon Technologies - IRHMS57Z60

Space Qualified MOSFETs from Infineon Technologies
Description:30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Space Standard:
MIL-PRF-19500, MIL-STD-750
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
45 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
5.5 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
208 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA Low Ohmic
more info
IRHMS9A7064 Image
 Download Datasheet  Request Information  Product Details

Infineon Technologies - IRHMS9A7064

Space Qualified MOSFETs from Infineon Technologies
Description:60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Space Standard:
MIL-PRF-19500/777, MIL-STD-750
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
45 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
7 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
208 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA Low Ohmic
more info
IRHMS67264 Image
 Download Datasheet  Request Information  Product Details

Infineon Technologies - IRHMS67264

Space Qualified MOSFETs from Infineon Technologies
Description:250 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Space Standard:
MIL-PRF-19500, MIL-STD-750
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
45 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
41 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
208 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA Low Ohmic
more info
Advertisement
IRHMS6S7160 Image
 Download Datasheet  Request Information  Product Details

Infineon Technologies - IRHMS6S7160

Space Qualified MOSFETs from Infineon Technologies
Description:100 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Space Standard:
MIL-STD-750
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
45 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
11 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
208 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA Low Ohmic
more info
IRHMS6S7260 Image
 Download Datasheet  Request Information  Product Details

Infineon Technologies - IRHMS6S7260

Space Qualified MOSFETs from Infineon Technologies
Description:200 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Space Standard:
MIL-STD-750
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
45 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
29 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
208 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA Low Ohmic
more info
IRHMB6S7260 Image
 Download Datasheet  Request Information  Product Details

Infineon Technologies - IRHMB6S7260

Space Qualified MOSFETs from Infineon Technologies
Description:200 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Space Standard:
MIL-STD-750
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
45 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
29 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
208 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA Tabless Low Ohmic
more info
IRHMK57160 Image
 Download Datasheet  Request Information  Product Details

Infineon Technologies - IRHMK57160

Space Qualified MOSFETs from Infineon Technologies
Description:100V Radiation Hardened N-channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Space Standard:
MIL-STD-750, MIL-PRF-19500
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
45 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
14 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
208 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA Tabless SMD
more info
Advertisement
IRHMS67160 Image
 Download Datasheet  Request Information  Product Details

Infineon Technologies - IRHMS67160

Space Qualified MOSFETs from Infineon Technologies
Description:100 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Space Standard:
MIL-STD-750, MIL-PRF-19500/753
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
45 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
11 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
208 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA Low Ohmic
more info
IRHYB9A97034CM Image
 Download Datasheet  Request Information  Product Details

Infineon Technologies - IRHYB9A97034CM

Space Qualified MOSFETs from Infineon Technologies
Description:-60 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Space Standard:
MIL-STD-750, MIL-PRF-19500
Transistor Polarity:
P-Channel
Number of Channel:
Single
Continous Drain Current:
-30 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
46 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-257AA Tabless Low Ohmic
more info
IRHF67234 Image
 Download Datasheet  Request Information  Product Details

Infineon Technologies - IRHF67234

Space Qualified MOSFETs from Infineon Technologies
Description:250 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
9.5 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
250 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
44 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-205AF
more info
IRHM57160 Image
 Download Datasheet  Request Information  Product Details

Infineon Technologies - IRHM57160

Space Qualified MOSFETs from Infineon Technologies
Description:100 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
35 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
18 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA
more info
Advertisement
IRHNS57160 Image
 Download Datasheet  Request Information  Product Details

Infineon Technologies - IRHNS57160

Space Qualified MOSFETs from Infineon Technologies
Description:100 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Space Standard:
MIL-STD-750, MIL-PRF-19500
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
75 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
12 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
SupIR-SMD
more info
IRHNS67160 Image
 Download Datasheet  Request Information  Product Details

Infineon Technologies - IRHNS67160

Space Qualified MOSFETs from Infineon Technologies
Description:100 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Space Standard:
MIL-STD-750, MIL-PRF-19500/760
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
56 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
10 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
SupIR-SMD
more info
IRHN7054 Image
 Download Datasheet  Request Information  Product Details

Infineon Technologies - IRHN7054

Space Qualified MOSFETs from Infineon Technologies
Description:60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Space Standard:
MIL-PRF-19500, MIL-STD-750
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
35 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
30 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
150 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD-1
more info
Advertisement
Have a Custom Requirement?
Parametric Search Select multiple parameters and narrow results

Filters

Selected Filters:

Types of MOSFET

Manufacturers

Space Standard

Technology

Transistor Polarity

Number of Channel

Continous Drain Current (A)

Apply

Drain Source Breakdown Voltage (V)

Apply

Channel Configuration

Drain Source Resistance (milliohm)

Apply

Gate Source Voltage (V)

Apply

Gate Charge (nC)

Apply

Power Dissipation (W)

Apply

RoHS Compliant

Qualification

Package Type

Advertisement