Space Qualified MOSFETs - SATNow

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Infineon Technologies - IRHN7150

Space Qualified MOSFETs from Infineon Technologies

Description:100 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode

Space Standard:

MIL-STD-750, MIL-PRF-19500

Transistor Polarity:

N-Channel

Number of Channel:

Single

Continous Drain Current:

34 A

Drain Source Breakdown Voltage:

100 V

Drain Source Resistance:

76 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

150 W

Temperature operating range:

-55 to 150 Degree C

Package:

SMD-1

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Infineon Technologies - IRHY57034CM

Space Qualified MOSFETs from Infineon Technologies

Description:60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode

Space Standard:

MIL-PRF-19500, MIL-STD-750

Transistor Polarity:

N-Channel

Number of Channel:

Single

Continous Drain Current:

18 A

Drain Source Breakdown Voltage:

60 V

Drain Source Resistance:

40 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

75 W

Temperature operating range:

-55 to 150 Degree C

Package:

TO-257AA

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Infineon Technologies - IRHM9064

Space Qualified MOSFETs from Infineon Technologies

Description:-60 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:

P-Channel Enhancement Mode

Space Standard:

MIL-STD-750, MIL-PRF-19500/660

Transistor Polarity:

P-Channel

Number of Channel:

Single

Continous Drain Current:

-35 A

Drain Source Breakdown Voltage:

-60 V

Drain Source Resistance:

53 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

250 W

Temperature operating range:

-55 to 150 Degree C

Package:

TO-254AA

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Infineon Technologies - IRHNA5S97160

Space Qualified MOSFETs from Infineon Technologies

Description:-100 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:

P-Channel Enhancement Mode

Space Standard:

MIL-STD-750

Transistor Polarity:

P-Channel

Number of Channel:

Single

Continous Drain Current:

-47 A

Drain Source Breakdown Voltage:

-100 V

Drain Source Resistance:

49 milliohm

Gate Source Voltage:

-12 to 12 V

Power Dissipation:

250 W

Temperature operating range:

-55 to 150 Degree C

Package:

SMD-2

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Infineon Technologies - IRHNS597260

Space Qualified MOSFETs from Infineon Technologies

Description:-200 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:

P-Channel Enhancement Mode

Space Standard:

MIL-STD-750, MIL-PRF-19500/713

Transistor Polarity:

P-Channel

Number of Channel:

Single

Continous Drain Current:

-33.5 A

Drain Source Breakdown Voltage:

-200 V

Drain Source Resistance:

102 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

250 W

Temperature operating range:

-55 to 150 Degree C

Package:

SupIR-SMD

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Infineon Technologies - IRHYB597034CM

Space Qualified MOSFETs from Infineon Technologies

Description:-60 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:

P-Channel Enhancement Mode

Space Standard:

MIL-STD-750

Transistor Polarity:

P-Channel

Number of Channel:

Single

Continous Drain Current:

-20 A

Drain Source Breakdown Voltage:

-60 V

Drain Source Resistance:

87 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

75 W

Temperature operating range:

-55 to 150 Degree C

Package:

TO-257AA Tabless Low Ohmic

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Infineon Technologies - IRHN7250SE

Space Qualified MOSFETs from Infineon Technologies

Description:200 V N-Channel Radiation Hardened Power MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode

Space Standard:

MIL-STD-750, MIL-PRF-19500

Transistor Polarity:

N-Channel

Number of Channel:

Single

Continous Drain Current:

26 A

Drain Source Breakdown Voltage:

200 V

Drain Source Resistance:

105 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

150 W

Temperature operating range:

-55 to 150 Degree C

Package:

SMD-1

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Infineon Technologies - IRHF57Z30

Space Qualified MOSFETs from Infineon Technologies

Description:30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode

Space Standard:

MIL-PRF-19500, MIL-STD-750

Transistor Polarity:

N-Channel

Number of Channel:

Single

Continous Drain Current:

12 A

Drain Source Breakdown Voltage:

30 V

Drain Source Resistance:

45 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

25 W

Temperature operating range:

-55 to 150 Degree C

Package:

TO-205AF

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Infineon Technologies - IRHYB597Z30CM

Space Qualified MOSFETs from Infineon Technologies

Description:-30 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:

P-Channel Enhancement Mode

Space Standard:

MIL-STD-750

Transistor Polarity:

P-Channel

Number of Channel:

Single

Continous Drain Current:

-20 A

Drain Source Breakdown Voltage:

-30 V

Drain Source Resistance:

72 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

75 W

Temperature operating range:

-55 to 150 Degree C

Package:

TO-257AA Tabless Low Ohmic

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Infineon Technologies - IRHM7460SE

Space Qualified MOSFETs from Infineon Technologies

Description:500 V Radiation Hardened N-Channel Power MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode

Space Standard:

MIL-PRF-19500, MIL-STD-750

Transistor Polarity:

N-Channel

Number of Channel:

Single

Continous Drain Current:

18 A

Drain Source Breakdown Voltage:

500 V

Drain Source Resistance:

360 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

250 W

Temperature operating range:

-55 to 150 Degree C

Package:

TO-254AA

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Infineon Technologies - IRHNJ67234

Space Qualified MOSFETs from Infineon Technologies

Description:250 V N-channel Power MOSFET for Space Applications

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode

Space Standard:

MIL-PRF-19500, MIL-STD-750

Transistor Polarity:

N-Channel

Number of Channel:

Single

Continous Drain Current:

12.4 A

Drain Source Breakdown Voltage:

250 V

Drain Source Resistance:

210 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

75 W

Temperature operating range:

-55 to 150 Degree C

Package:

SMD-0.5

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Infineon Technologies - IRHNM597110

Space Qualified MOSFETs from Infineon Technologies

Description:-100 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:

P-Channel Enhancement Mode

Space Standard:

MIL-STD-750, MIL-PRF-19500

Transistor Polarity:

P-Channel

Number of Channel:

Single

Continous Drain Current:

-3.1 A

Drain Source Breakdown Voltage:

-100 V

Drain Source Resistance:

1200 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

23 W

Temperature operating range:

-55 to 150 Degree C

Package:

SMD-0.2

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Infineon Technologies - IRHE9230

Space Qualified MOSFETs from Infineon Technologies

Description:Single P-Channel Rad-Hard MOSFET

Product Specs

Types of MOSFET:

P-Channel Enhancement Mode

Space Standard:

MIL-PRF-19500/630, MIL-STD-750

Transistor Polarity:

P-Channel

Number of Channel:

Single

Continous Drain Current:

-4 A

Drain Source Breakdown Voltage:

-200 V

Drain Source Resistance:

800 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

25 W

Temperature operating range:

-55 to 150 Degree C

Package:

18-pin LCC

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Infineon Technologies - IRHE7110

Space Qualified MOSFETs from Infineon Technologies

Description:100 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode

Space Standard:

MIL-STD-750, MIL-PRF-19500

Transistor Polarity:

N-Channel

Number of Channel:

Single

Continous Drain Current:

3.5 A

Drain Source Breakdown Voltage:

100 V

Drain Source Resistance:

690 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

15 W

Temperature operating range:

-55 to 150 Degree C

Package:

18-pin LCC

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Infineon Technologies - IRHF7110

Space Qualified MOSFETs from Infineon Technologies

Description:100 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode

Space Standard:

MIL-PRF-19500, MIL-STD-750

Transistor Polarity:

N-Channel

Number of Channel:

Single

Continous Drain Current:

3.5 A

Drain Source Breakdown Voltage:

100 V

Drain Source Resistance:

690 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

15 W

Temperature operating range:

-55 to 150 Degree C

Package:

TO-205AF

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Space Qualified MOSFETs - Page 11

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