Space Qualified MOSFETs - SATNow

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Infineon Technologies - BUY15CS45B-01(ES)

Space Qualified MOSFETs from Infineon Technologies

Description:150 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode

Transistor Polarity:

N-Channel

Number of Channel:

Single

Continous Drain Current:

45 A

Drain Source Breakdown Voltage:

150 V

Drain Source Resistance:

23 to 53 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

208 W

Temperature operating range:

-55 to 150 Degree C

Package:

TO-257AA

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Infineon Technologies - BUY15CS45B-01(P)

Space Qualified MOSFETs from Infineon Technologies

Description:150 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode

Transistor Polarity:

N-Channel

Number of Channel:

Single

Continous Drain Current:

45 A

Drain Source Breakdown Voltage:

150 V

Drain Source Resistance:

23 to 53 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

208 W

Temperature operating range:

-55 to 150 Degree C

Package:

TO-257AA

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Infineon Technologies - IRHNA6S7264

Space Qualified MOSFETs from Infineon Technologies

Description:250 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode

Space Standard:

MIL-STD-750

Transistor Polarity:

N-Channel

Number of Channel:

Single

Continous Drain Current:

50 A

Drain Source Breakdown Voltage:

250 V

Drain Source Resistance:

40 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

250 W

Temperature operating range:

-55 to 150 Degree C

Package:

SMD-2

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Infineon Technologies - BUY06CS45B-01(ES)

Space Qualified MOSFETs from Infineon Technologies

Description:60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode

Transistor Polarity:

N-Channel

Number of Channel:

Single

Continous Drain Current:

45 A

Drain Source Breakdown Voltage:

60 V

Drain Source Resistance:

13.5 to 24 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

208 W

Temperature operating range:

-55 to 150 Degree C

Package:

TO254AA

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Infineon Technologies - IRHN9250

Space Qualified MOSFETs from Infineon Technologies

Description:-200 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:

P-Channel Enhancement Mode

Space Standard:

MIL-PRF-19500/662, MIL-STD-750

Transistor Polarity:

P-Channel

Number of Channel:

Single

Continous Drain Current:

-14 A

Drain Source Breakdown Voltage:

-200 V

Drain Source Resistance:

330 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

150 W

Temperature operating range:

-55 to 150 Degree C

Package:

SMD-1

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Infineon Technologies - BUY15CS57A-01(P)

Space Qualified MOSFETs from Infineon Technologies

Description:150 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode

Transistor Polarity:

N-Channel

Number of Channel:

Single

Continous Drain Current:

57 A

Drain Source Breakdown Voltage:

150 V

Drain Source Resistance:

9 to 20 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

250 W

Temperature operating range:

-55 to 150 Degree C

Package:

SMD2

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Infineon Technologies - BUY06CS35J-01(ES)

Space Qualified MOSFETs from Infineon Technologies

Description:60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode

Transistor Polarity:

N-Channel

Number of Channel:

Single

Continous Drain Current:

35 A

Drain Source Breakdown Voltage:

60 V

Drain Source Resistance:

28 to 52 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

75 W

Temperature operating range:

-55 to 150 Degree C

Package:

SMD05

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Infineon Technologies - BUY06CS35J-01(P)

Space Qualified MOSFETs from Infineon Technologies

Description:60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode

Transistor Polarity:

N-Channel

Number of Channel:

Single

Continous Drain Current:

35 A

Drain Source Breakdown Voltage:

60 V

Drain Source Resistance:

28 to 52 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

75 W

Temperature operating range:

-55 to 150 Degree C

Package:

SMD05

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Infineon Technologies - BUY06CS45B-01(P)

Space Qualified MOSFETs from Infineon Technologies

Description:60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode

Transistor Polarity:

N-Channel

Number of Channel:

Single

Continous Drain Current:

45 A

Drain Source Breakdown Voltage:

60 V

Drain Source Resistance:

13.5 to 24 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

208 W

Temperature operating range:

-55 to 150 Degree C

Package:

TO254AA

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Infineon Technologies - BUY15CS23J-01(P)

Space Qualified MOSFETs from Infineon Technologies

Description:150 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode

Transistor Polarity:

N-Channel

Number of Channel:

Single

Continous Drain Current:

23 A

Drain Source Breakdown Voltage:

150 V

Drain Source Resistance:

51 to 110 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

75 W

Temperature operating range:

-55 to 150 Degree C

Package:

SMD05

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Infineon Technologies - BUY15CS23K-01(ES)

Space Qualified MOSFETs from Infineon Technologies

Description:150 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode

Transistor Polarity:

N-Channel

Number of Channel:

Single

Continous Drain Current:

23 A

Drain Source Breakdown Voltage:

150 V

Drain Source Resistance:

55 to 110 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

75 W

Temperature operating range:

-55 to 150 Degree C

Package:

TO-257AA

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Infineon Technologies - BUY15CS23J-01(ES)

Space Qualified MOSFETs from Infineon Technologies

Description:150 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode

Transistor Polarity:

N-Channel

Number of Channel:

Single

Continous Drain Current:

23 A

Drain Source Breakdown Voltage:

150 V

Drain Source Resistance:

51 to 110 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

75 W

Temperature operating range:

-55 to 150 Degree C

Package:

SMD05

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Infineon Technologies - IRHNS597160

Space Qualified MOSFETs from Infineon Technologies

Description:-100 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:

P-Channel Enhancement Mode

Space Standard:

MIL-PRF-19500/713, MIL-STD-750

Transistor Polarity:

P-Channel

Number of Channel:

Single

Continous Drain Current:

-47 A

Drain Source Breakdown Voltage:

-100 V

Drain Source Resistance:

49 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

250 W

Temperature operating range:

-55 to 150 Degree C

Package:

SupIR-SMD

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Infineon Technologies - BUY06CS23K-01(ES)

Space Qualified MOSFETs from Infineon Technologies

Description:60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode

Transistor Polarity:

N-Channel

Number of Channel:

Single

Continous Drain Current:

23 A

Drain Source Breakdown Voltage:

60 V

Drain Source Resistance:

36 to 65 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

75 W

Temperature operating range:

-55 to 150 Degree C

Package:

TO-257AA

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Infineon Technologies - BUY06CS23K-01(P)

Space Qualified MOSFETs from Infineon Technologies

Description:60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode

Transistor Polarity:

N-Channel

Number of Channel:

Single

Continous Drain Current:

23 A

Drain Source Breakdown Voltage:

60 V

Drain Source Resistance:

36 to 65 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

75 W

Temperature operating range:

-55 to 150 Degree C

Package:

TO-257AA

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Space Qualified MOSFETs - Page 14

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