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Infineon Technologies - BUY15CS23K-01(P)

Space Qualified MOSFETs from Infineon Technologies

Description:150 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode

Transistor Polarity:

N-Channel

Number of Channel:

Single

Continous Drain Current:

23 A

Drain Source Breakdown Voltage:

150 V

Drain Source Resistance:

55 to 110 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

75 W

Temperature operating range:

-55 to 150 Degree C

Package:

TO-257AA

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Infineon Technologies - IRHY9130CM

Space Qualified MOSFETs from Infineon Technologies

Description:-100 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:

P-Channel Enhancement Mode

Space Standard:

MIL-STD-750, MIL-PRF-19500/615

Transistor Polarity:

P-Channel

Number of Channel:

Single

Continous Drain Current:

-11 A

Drain Source Breakdown Voltage:

-100 V

Drain Source Resistance:

350 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

75 W

Temperature operating range:

-55 to 150 Degree C

Package:

TO-257AA

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Infineon Technologies - BUY25CS54A-01 (P)

Space Qualified MOSFETs from Infineon Technologies

Description:250 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode

Transistor Polarity:

N-Channel

Number of Channel:

Single

Continous Drain Current:

54 A

Drain Source Breakdown Voltage:

250 V

Drain Source Resistance:

18 to 70 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

250 W

Temperature operating range:

-55 to 150 Degree C

Package:

SMD2

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Infineon Technologies - BUY15CS57A-01(ES)

Space Qualified MOSFETs from Infineon Technologies

Description:150 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode

Transistor Polarity:

N-Channel

Number of Channel:

Single

Continous Drain Current:

57 A

Drain Source Breakdown Voltage:

150 V

Drain Source Resistance:

9 to 20 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

250 W

Temperature operating range:

-55 to 150 Degree C

Package:

SMD2

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Infineon Technologies - BUY06CS80A-01(P)

Space Qualified MOSFETs from Infineon Technologies

Description:60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode

Transistor Polarity:

N-Channel

Number of Channel:

Single

Continous Drain Current:

80 A

Drain Source Breakdown Voltage:

60 V

Drain Source Resistance:

5.6 to 10 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

250 W

Temperature operating range:

-55 to 150 Degree C

Package:

SMD2

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Infineon Technologies - IRHNJ7330SE

Space Qualified MOSFETs from Infineon Technologies

Description:400 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode

Space Standard:

MIL-STD-750, MIL-PRF-19500

Transistor Polarity:

N-Channel

Number of Channel:

Single

Continous Drain Current:

5 A

Drain Source Breakdown Voltage:

400 V

Drain Source Resistance:

1390 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

75 W

Temperature operating range:

-55 to 150 Degree C

Package:

SMD-0.5

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Infineon Technologies - IRHNM57214SE

Space Qualified MOSFETs from Infineon Technologies

Description:250 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode

Space Standard:

MIL-PRF-19500, MIL-STD-750

Transistor Polarity:

N-Channel

Number of Channel:

Single

Continous Drain Current:

3.7 A

Drain Source Breakdown Voltage:

250 V

Drain Source Resistance:

1700 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

40 W

Temperature operating range:

-55 to 150 Degree C

Package:

SMD-0.2

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Infineon Technologies - BUY25CS12K-01 (ES)

Space Qualified MOSFETs from Infineon Technologies

Description:250 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode

Transistor Polarity:

N-Channel

Number of Channel:

Single

Continous Drain Current:

12.4 A

Drain Source Breakdown Voltage:

250 V

Drain Source Resistance:

115 to 300 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

75 W

Temperature operating range:

-55 to 150 Degree C

Package:

TO-257AA

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Infineon Technologies - BUY25CS12K-01 (P)

Space Qualified MOSFETs from Infineon Technologies

Description:250 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode

Transistor Polarity:

N-Channel

Number of Channel:

Single

Continous Drain Current:

12.4 A

Drain Source Breakdown Voltage:

250 V

Drain Source Resistance:

115 to 300 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

75 W

Temperature operating range:

-55 to 150 Degree C

Package:

TO-257AA

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Infineon Technologies - BUY25CS12K-11 (ES)

Space Qualified MOSFETs from Infineon Technologies

Description:250 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode

Transistor Polarity:

N-Channel

Number of Channel:

Single

Continous Drain Current:

12.4 A

Drain Source Breakdown Voltage:

250 V

Drain Source Resistance:

115 to 300 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

75 W

Temperature operating range:

-55 to 150 Degree C

Package:

TO-257AA

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Infineon Technologies - BUY25CS12K-11 (P)

Space Qualified MOSFETs from Infineon Technologies

Description:250 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode

Transistor Polarity:

N-Channel

Number of Channel:

Single

Continous Drain Current:

12.4 A

Drain Source Breakdown Voltage:

250 V

Drain Source Resistance:

115 to 300 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

75 W

Temperature operating range:

-55 to 150 Degree C

Package:

TO-257AA

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Infineon Technologies - BUY25CS12J-01 (ES)

Space Qualified MOSFETs from Infineon Technologies

Description:250 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode

Transistor Polarity:

N-Channel

Number of Channel:

Single

Continous Drain Current:

12.4 A

Drain Source Breakdown Voltage:

250 V

Drain Source Resistance:

115 to 300 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

75 W

Temperature operating range:

-55 to 150 Degree C

Package:

SMD05

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Infineon Technologies - BUY25CS12J-01 (P)

Space Qualified MOSFETs from Infineon Technologies

Description:250 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode

Transistor Polarity:

N-Channel

Number of Channel:

Single

Continous Drain Current:

12.4 A

Drain Source Breakdown Voltage:

250 V

Drain Source Resistance:

115 to 300 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

75 W

Temperature operating range:

-55 to 150 Degree C

Package:

SMD05

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Infineon Technologies - IRHLNJ77034

Space Qualified MOSFETs from Infineon Technologies

Description:60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode

Space Standard:

MIL-STD-750

Transistor Polarity:

N-Channel

Number of Channel:

Single

Continous Drain Current:

22 A

Drain Source Breakdown Voltage:

60 V

Drain Source Resistance:

39 milliohm

Gate Source Voltage:

-10 to 10 V

Power Dissipation:

57 W

Temperature operating range:

-55 to 150 Degree C

Package:

SMD-0.5

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Infineon Technologies - BUY65CS08J-01(ES)

Space Qualified MOSFETs from Infineon Technologies

Description:650 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode

Transistor Polarity:

N-Channel

Number of Channel:

Single

Continous Drain Current:

8 A

Drain Source Breakdown Voltage:

650 V

Drain Source Resistance:

370 to 900 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

75 W

Temperature operating range:

-55 to 150 Degree C

Package:

SMD05

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Space Qualified MOSFETs - Page 15

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