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Space Qualified MOSFETs - Page 19

355 Space Qualified MOSFETs from 6 Manufacturers meet your specification.
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355 Space Qualified MOSFETs from 6 Manufacturers
355 Products from 6 Manufacturers
Page 19 of 24
IRHE9130 Image
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Infineon Technologies - IRHE9130

Space Qualified MOSFETs from Infineon Technologies
Description:Radiation Hardened P-Channel MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Space Standard:
MIL-PRF-19500/630, MIL-STD-750
Transistor Polarity:
P-Channel
Number of Channel:
Single
Continous Drain Current:
-6.5 A
Drain Source Breakdown Voltage:
-100 V
Drain Source Resistance:
350 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
25 W
Temperature operating range:
-55 to 150 Degree C
Package:
18-pin LCC
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IRHM7260SE Image
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Infineon Technologies - IRHM7260SE

Space Qualified MOSFETs from Infineon Technologies
Description:200 V, 260 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
35 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
77 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA
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IRHLMS77064 Image
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Infineon Technologies - IRHLMS77064

Space Qualified MOSFETs from Infineon Technologies
Description:60 V, 162 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
45 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
12 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
208 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA
more info
IRHF57234SE Image
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Infineon Technologies - IRHF57234SE

Space Qualified MOSFETs from Infineon Technologies
Description:250 V Radiation Hardened N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Space Standard:
MIL-PRF-19500/706, MIL-STD-750
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
5.2 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
420 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
25 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-205AF
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IRHNA7Z60 Image
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Infineon Technologies - IRHNA7Z60

Space Qualified MOSFETs from Infineon Technologies
Description:30 V, 421 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
75 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
9 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
300 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD-2
more info
IRHYB9A7130CM Image
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Infineon Technologies - IRHYB9A7130CM

Space Qualified MOSFETs from Infineon Technologies
Description:100 V, 44 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Space Standard:
MIL-STD-750, MIL- PRF-19500/775
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
30 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
35 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-257AA Tabless Low Ohmic
more info
IRHYS9A7034CM Image
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Infineon Technologies - IRHYS9A7034CM

Space Qualified MOSFETs from Infineon Technologies
Description:60 V, 45 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Space Standard:
MIL-STD-750, MIL-PRF-19500/775
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
30 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
19 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-257AA Low Ohmic
more info
IRHNA9064 Image
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Infineon Technologies - IRHNA9064

Space Qualified MOSFETs from Infineon Technologies
Description:-60 V, 300 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Space Standard:
MIL-PRF-19500, MIL-STD-750
Transistor Polarity:
P-Channel
Number of Channel:
Single
Continous Drain Current:
-48 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
48 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
300 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD-2
more info
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IRHNS597Z60 Image
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Infineon Technologies - IRHNS597Z60

Space Qualified MOSFETs from Infineon Technologies
Description:-30 V, 240 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Space Standard:
MIL-STD-750, MIL-PRF-19500/733
Transistor Polarity:
P-Channel
Number of Channel:
Single
Continous Drain Current:
-56 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
13 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
SupIR-SMD
more info
IRHN7250 Image
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Infineon Technologies - IRHN7250

Space Qualified MOSFETs from Infineon Technologies
Description:200 V, 170 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Space Standard:
MIL-PRF-19500, MIL-STD-750
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
26 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
110 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
150 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD-1
more info
IRHM7230 Image
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Infineon Technologies - IRHM7230

Space Qualified MOSFETs from Infineon Technologies
Description:200 V, 50 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
9 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
49 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA
more info
IRHM57Z60 Image
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Infineon Technologies - IRHM57Z60

Space Qualified MOSFETs from Infineon Technologies
Description:30 V, 200 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
35 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
9.5 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA
more info
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IRHM7054 Image
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Infineon Technologies - IRHM7054

Space Qualified MOSFETs from Infineon Technologies
Description:60 V, 200 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
35 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
300 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
150 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA
more info
IRHNS9A7160 Image
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Infineon Technologies - IRHNS9A7160

Space Qualified MOSFETs from Infineon Technologies
Description:100 V, 195 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Space Standard:
MIL-STD-750, MIL-PRF-19500
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
100 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
6.5 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
SupIR-SMD
more info
IRHM57260SE Image
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Infineon Technologies - IRHM57260SE

Space Qualified MOSFETs from Infineon Technologies
Description:200 V, 165 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
35 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
49 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
208 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA
more info
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