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Home
Electrical / Electronic Components
Space Qualified MOSFETs

Space Qualified MOSFETs - Page 21

355 Space Qualified MOSFETs from 6 Manufacturers meet your specification.

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355 Space Qualified MOSFETs from 6 Manufacturers

355 Products from 6 Manufacturers

Page 21 of 24

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Infineon Technologies - IRHY7230CM

Space Qualified MOSFETs from Infineon Technologies

Description:200 V, 50 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode

Transistor Polarity:

N-Channel

Number of Channel:

Single

Continous Drain Current:

9.4 A

Drain Source Breakdown Voltage:

200 V

Drain Source Resistance:

490 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

75 W

Temperature operating range:

-55 to 150 Degree C

Package:

TO-257AA

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Infineon Technologies - IRHMJ57160

Space Qualified MOSFETs from Infineon Technologies

Description:100 V, 160 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode

Transistor Polarity:

N-Channel

Number of Channel:

Single

Continous Drain Current:

35 A

Drain Source Breakdown Voltage:

100 V

Drain Source Resistance:

18 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

250 W

Temperature operating range:

-55 to 150 Degree C

Package:

TO-254AA Tabless SMD

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Infineon Technologies - IRHMJ57260SE

Space Qualified MOSFETs from Infineon Technologies

Description:200 V, 165 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode

Transistor Polarity:

N-Channel

Number of Channel:

Single

Continous Drain Current:

35 A

Drain Source Breakdown Voltage:

200 V

Drain Source Resistance:

49 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

208 W

Temperature operating range:

-55 to 150 Degree C

Package:

TO-254AA Tabless SMD

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Infineon Technologies - IRHMJ7250

Space Qualified MOSFETs from Infineon Technologies

Description:200 V, 170 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode

Transistor Polarity:

N-Channel

Number of Channel:

Single

Continous Drain Current:

26 A

Drain Source Breakdown Voltage:

200 V

Drain Source Resistance:

110 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

150 W

Temperature operating range:

-55 to 150 Degree C

Package:

TO-254AA Tabless SMD

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Infineon Technologies - IRHNJ5S97130

Space Qualified MOSFETs from Infineon Technologies

Description:-100 V, 45 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:

P-Channel Enhancement Mode

Transistor Polarity:

P-Channel

Number of Channel:

Single

Continous Drain Current:

-12.5 A

Drain Source Breakdown Voltage:

-100 V

Drain Source Resistance:

205 milliohm

Gate Source Voltage:

-12 to 12 V

Power Dissipation:

75 W

Temperature operating range:

-55 to 150 Degree C

Package:

SMD-0.5

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Infineon Technologies - IRHNA7260SE

Space Qualified MOSFETs from Infineon Technologies

Description:200 V, 290 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode

Transistor Polarity:

N-Channel

Number of Channel:

Single

Continous Drain Current:

43 A

Drain Source Breakdown Voltage:

200 V

Drain Source Resistance:

77 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

300 W

Temperature operating range:

-55 to 150 Degree C

Package:

SMD-2

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Infineon Technologies - IRHMS6S7264

Space Qualified MOSFETs from Infineon Technologies

Description:250 V N-Channel Radiation Hardened Power MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode

Space Standard:

MIL-STD-750

Transistor Polarity:

N-Channel

Number of Channel:

Single

Continous Drain Current:

45 A

Drain Source Breakdown Voltage:

250 V

Drain Source Resistance:

41 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

208 W

Temperature operating range:

-55 to 150 Degree C

Package:

TO-254AA

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Infineon Technologies - IRHMS67164

Space Qualified MOSFETs from Infineon Technologies

Description:150 V, 230 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode

Space Standard:

MIL-PRF-19500/753, MIL-STD-750

Transistor Polarity:

N-Channel

Number of Channel:

Single

Continous Drain Current:

45 A

Drain Source Breakdown Voltage:

150 V

Drain Source Resistance:

19 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

208 W

Temperature operating range:

-55 to 150 Degree C

Package:

TO-254AA Low Ohmic

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Infineon Technologies - IRHYS67230CM

Space Qualified MOSFETs from Infineon Technologies

Description:200 V, 42 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode

Space Standard:

MIL-PRF-19500, MIL-STD-750

Transistor Polarity:

N-Channel

Number of Channel:

Single

Continous Drain Current:

16 A

Drain Source Breakdown Voltage:

200 V

Drain Source Resistance:

130 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

75 W

Temperature operating range:

-55 to 150 Degree C

Package:

TO-257AA

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Infineon Technologies - IRH9230

Space Qualified MOSFETs from Infineon Technologies

Description:-200 V, 35 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:

P-Channel Enhancement Mode

Transistor Polarity:

P-Channel

Number of Channel:

Single

Continous Drain Current:

-6 A

Drain Source Breakdown Voltage:

-200 V

Drain Source Resistance:

920 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

75 W

Temperature operating range:

-55 to 150 Degree C

Package:

TO-204AA

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Infineon Technologies - IRH9250

Space Qualified MOSFETs from Infineon Technologies

Description:200 V Rad-Hard P-Channel Power MOSFET

Product Specs

Types of MOSFET:

P-Channel Enhancement Mode

Transistor Polarity:

P-Channel

Number of Channel:

Single

Continous Drain Current:

-14 A

Drain Source Breakdown Voltage:

-200 V

Drain Source Resistance:

330 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

150 W

Temperature operating range:

-55 to 150 Degree C

Package:

TO-204AE

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Infineon Technologies - IRHYS6S7230CM

Space Qualified MOSFETs from Infineon Technologies

Description:200 V, 42 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode

Space Standard:

MIL-STD-750

Transistor Polarity:

N-Channel

Number of Channel:

Single

Continous Drain Current:

16 A

Drain Source Breakdown Voltage:

200 V

Drain Source Resistance:

130 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

75 W

Temperature operating range:

-55 to 150 Degree C

Package:

TO-257AA Low Ohmic

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Infineon Technologies - IRHF9130

Space Qualified MOSFETs from Infineon Technologies

Description:100 V Rad-Hard P-Channel Power MOSFET

Product Specs

Types of MOSFET:

P-Channel Enhancement Mode

Space Standard:

MIL-PRF-19500/630, MIL-STD-750

Transistor Polarity:

P-Channel

Number of Channel:

Single

Continous Drain Current:

-6.5 A

Drain Source Breakdown Voltage:

-100 V

Drain Source Resistance:

350 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

25 W

Temperature operating range:

-55 to 150 Degree C

Package:

TO-205AF

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Infineon Technologies - IRHYS67234CM

Space Qualified MOSFETs from Infineon Technologies

Description:250 V, 40 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode

Space Standard:

MIL-STD-750, MIL-PRF-19500

Transistor Polarity:

N-Channel

Number of Channel:

Single

Continous Drain Current:

12 A

Drain Source Breakdown Voltage:

250 V

Drain Source Resistance:

220 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

75 W

Temperature operating range:

-55 to 150 Degree C

Package:

TO-257AA

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Infineon Technologies - IRHM57064

Space Qualified MOSFETs from Infineon Technologies

Description:60 V, 160 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:

N-Channel Enhancement Mode

Transistor Polarity:

N-Channel

Number of Channel:

Single

Continous Drain Current:

35 A

Drain Source Breakdown Voltage:

60 V

Drain Source Resistance:

12 milliohm

Gate Source Voltage:

-20 to 20 V

Power Dissipation:

208 W

Temperature operating range:

-55 to 150 Degree C

Package:

TO-254AA

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mosfetsmosfetsMOSFETsSpace Qualified MOSFETsstypes:expand,sspace_standard:expand,stechnology:expand,spolarity:expand,schannels:expand,sconfiguration:expand,srohs_compliant:expand,squalification:expand,spackage_type:expandstypes:single,sspace_standard:single,stechnology:single,spolarity:single,schannels:single,sconfiguration:single,srohs_compliant:single,squalification:single,spackage_type:singlestypes:Types of MOSFET,sspace_standard:Space Standard,stechnology:Technology,spolarity:Transistor Polarity,schannels:Number of Channel,sconfiguration:Channel Configuration,srohs_compliant:RoHS Compliant,squalification:Qualification,spackage_type:Package Typescontinous_drain_current:expand,sdrain_source_breakdown_volt:expand,sdrain_source_resistance:expand,sgate_source_volt:expand,sgate_charge:expand,spower_dissipation:expandscontinous_drain_current:2132,sdrain_source_breakdown_volt:2126,sdrain_source_resistance:2129,sgate_source_volt:2117,sgate_charge:2123,spower_dissipation:2135{"stypes":"or","sspace_standard":"or","stechnology":"or","spolarity":"or","schannels":"or","scontinous_drain_current":"or","sdrain_source_breakdown_volt":"or","sconfiguration":"or","sdrain_source_resistance":"or","sgate_source_volt":"or","sgate_charge":"or","spower_dissipation":"or","srohs_compliant":"or","squalification":"or","spackage_type":"or"}scontinous_drain_current:A,sdrain_source_breakdown_volt:V,sdrain_source_resistance:milliohm,sgate_source_volt:V,sgate_charge:nC,spower_dissipation:Wyes 30 ../../ Search iserach

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Space Qualified MOSFETs - Page 21

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