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Space Qualified MOSFETs - Page 23

355 Space Qualified MOSFETs from 6 Manufacturers meet your specification.
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355 Space Qualified MOSFETs from 6 Manufacturers
355 Products from 6 Manufacturers
Page 23 of 24
IRHMB7360SE Image
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Infineon Technologies - IRHMB7360SE

Space Qualified MOSFETs from Infineon Technologies
Description:400 V, 185 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Space Standard:
MIL-STD-750, MIL-PRF-19500
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
22 A
Drain Source Breakdown Voltage:
400 V
Drain Source Resistance:
210 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA Tabless
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IRHMS57260SE Image
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Infineon Technologies - IRHMS57260SE

Space Qualified MOSFETs from Infineon Technologies
Description:200 V, 165 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Space Standard:
MIL-PRF-19500/685, MIL-STD-750
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
45 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
44 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
208 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA
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IRHMS57160 Image
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Infineon Technologies - IRHMS57160

Space Qualified MOSFETs from Infineon Technologies
Description:100 V, 160 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Space Standard:
MIL-PRF-19500, MIL-STD-750
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
45 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
14 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
208 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA Low Ohmic
more info
IRHM7260 Image
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Infineon Technologies - IRHM7260

Space Qualified MOSFETs from Infineon Technologies
Description:200 V, 290 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Space Standard:
MIL-PRF-19500, MIL-STD-750
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
35 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
77 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA
more info
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IRHNA9260 Image
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Infineon Technologies - IRHNA9260

Space Qualified MOSFETs from Infineon Technologies
Description:-200 V, 300 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Space Standard:
MIL-PRF-19500, MIL-STD-750
Transistor Polarity:
P-Channel
Number of Channel:
Single
Continous Drain Current:
-29 A
Drain Source Breakdown Voltage:
-200 V
Drain Source Resistance:
159 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
300 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD-2
more info
IRHM7130 Image
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Infineon Technologies - IRHM7130

Space Qualified MOSFETs from Infineon Technologies
Description:100 V, 45 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
14 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
200 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA
more info
IRHM7150 Image
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Infineon Technologies - IRHM7150

Space Qualified MOSFETs from Infineon Technologies
Description:100 V, 160 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
34 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
76 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
150 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA
more info
IRHMB57064 Image
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Infineon Technologies - IRHMB57064

Space Qualified MOSFETs from Infineon Technologies
Description:60 V, 160 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Space Standard:
MIL-STD-750, MIL-PRF-19500
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
45 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
6 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
208 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA Tabless
more info
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IRHMB67260 Image
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Infineon Technologies - IRHMB67260

Space Qualified MOSFETs from Infineon Technologies
Description:200 V, 240 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Space Standard:
MIL-STD-750, MIL-PRF-19500
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
45 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
29 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
208 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA Tabless Low Ohmic
more info
IRHMB7260 Image
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Infineon Technologies - IRHMB7260

Space Qualified MOSFETs from Infineon Technologies
Description:200 V, 290 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Space Standard:
MIL-STD-750, MIL-PRF-19500
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
35 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
77 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA
more info
IRHNA57163SE Image
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Infineon Technologies - IRHNA57163SE

Space Qualified MOSFETs from Infineon Technologies
Description:130 V, 160 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Space Standard:
MIL-PRF-19500/684, MIL-STD-750
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
75 A
Drain Source Breakdown Voltage:
130 V
Drain Source Resistance:
13.5 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD-2
more info
IRHNJ9A7130 Image
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Infineon Technologies - IRHNJ9A7130

Space Qualified MOSFETs from Infineon Technologies
Description:100 V, 48 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Space Standard:
MIL-STD-750, MIL- PRF-19500/775
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
35 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
34 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD-0.5
more info
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IRHM57264SE Image
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Infineon Technologies - IRHM57264SE

Space Qualified MOSFETs from Infineon Technologies
Description:250 V, 45 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Space Standard:
MIL-STD-750
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
35 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
66 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA
more info
IRHM7064 Image
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Infineon Technologies - IRHM7064

Space Qualified MOSFETs from Infineon Technologies
Description:60 V, 270 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Space Standard:
MIL-STD-750, MIL-PRF-19500
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
35 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
21 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA
more info
IRHM7450SE Image
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Infineon Technologies - IRHM7450SE

Space Qualified MOSFETs from Infineon Technologies
Description:500 V, 140 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
12 A
Drain Source Breakdown Voltage:
500 V
Drain Source Resistance:
570 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
151 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA
more info
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