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Space Qualified Through Hole MOSFETs

150 Space Qualified Through Hole MOSFETs from 2 Manufacturers meet your specification.

Space Qualified Through Hole MOSFETs from multiple manufacturers are listed on SATNow. Use the filters to select products based on your requirement. View product details, download datasheets, compare products, get quotes and pricing for matching products. SATNow has compiled this list of products specifically for Space and Satellite Applications.

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  • Package Type: Through Hole
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60 V, N-Channel Enhancement Mode MOSFET

Space Qualified Through Hole MOSFET from Infineon Technologies
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SKU:BUY06CS23K-01(ES)
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
23 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
36 to 65 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-257AA
more info
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60 V, N-Channel Enhancement Mode MOSFET

Space Qualified Through Hole MOSFET from Infineon Technologies
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SKU:BUY06CS23K-01(P)
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
23 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
36 to 65 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-257AA
more info
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60 V, N-Channel Enhancement Mode MOSFET

Space Qualified Through Hole MOSFET from Infineon Technologies
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SKU:BUY06CS45B-01(ES)
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
45 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
13.5 to 24 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
208 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO254AA
more info
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60 V, N-Channel Enhancement Mode MOSFET

Space Qualified Through Hole MOSFET from Infineon Technologies
 Download Datasheet  Request Information
SKU:BUY06CS45B-01(P)
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
45 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
13.5 to 24 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
208 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO254AA
more info
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150 V, N-Channel Enhancement Mode MOSFET

Space Qualified Through Hole MOSFET from Infineon Technologies
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SKU:BUY15CS23K-01(ES)
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
23 A
Drain Source Breakdown Voltage:
150 V
Drain Source Resistance:
55 to 110 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-257AA
more info
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150 V, N-Channel Enhancement Mode MOSFET

Space Qualified Through Hole MOSFET from Infineon Technologies
 Download Datasheet  Request Information
SKU:BUY15CS23K-01(P)
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
23 A
Drain Source Breakdown Voltage:
150 V
Drain Source Resistance:
55 to 110 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-257AA
more info
 Download Datasheet  Request Information  Product Details

150 V, N-Channel Enhancement Mode MOSFET

Space Qualified Through Hole MOSFET from Infineon Technologies
 Download Datasheet  Request Information
SKU:BUY15CS45B-01(ES)
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
45 A
Drain Source Breakdown Voltage:
150 V
Drain Source Resistance:
23 to 53 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
208 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-257AA
more info
 Download Datasheet  Request Information  Product Details

150 V, N-Channel Enhancement Mode MOSFET

Space Qualified Through Hole MOSFET from Infineon Technologies
 Download Datasheet  Request Information
SKU:BUY15CS45B-01(P)
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
45 A
Drain Source Breakdown Voltage:
150 V
Drain Source Resistance:
23 to 53 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
208 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-257AA
more info
 Download Datasheet  Request Information  Product Details

250 V, N-Channel Enhancement Mode MOSFET

Space Qualified Through Hole MOSFET from Infineon Technologies
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SKU:BUY25CS12K-01 (ES)
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
12.4 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
115 to 300 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-257AA
more info
 Download Datasheet  Request Information  Product Details

250 V, N-Channel Enhancement Mode MOSFET

Space Qualified Through Hole MOSFET from Infineon Technologies
 Download Datasheet  Request Information
SKU:BUY25CS12K-01 (P)
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
12.4 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
115 to 300 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-257AA
more info
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