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Space Qualified P-Channel MOSFETs

81 Space Qualified P-Channel MOSFETs from 3 Manufacturers meet your specification.

Space Qualified P-Channel MOSFETs from multiple manufacturers are listed on SATNow. Use the filters to select products based on your requirement. View product details, download datasheets, compare products, get quotes and pricing for matching products. SATNow has compiled this list of products specifically for Space and Satellite Applications.

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  • Transistor Polarity: P-Channel
BSS84L Image
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AEC-Q101 Qualified P-Channel Enhancement MOSFET

Space Qualified P-Channel MOSFET from onsemi
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SKU:BSS84L
Segment:
Satellite
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-0.13 A
Drain Source Breakdown Voltage:
-50 V
Drain Source Resistance:
10000 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.225 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23-3
more info
IRH9130 Image
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-100 V, 45 nC, P-Channel Enhancement Mode MOSFET

Space Qualified P-Channel MOSFET from Infineon Technologies
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SKU:IRH9130
Segment:
Satellite
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-11 A
Drain Source Breakdown Voltage:
-100 V
Drain Source Resistance:
325 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-204AA
more info
IRH9150 Image
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-100 V, 85 nC, P-Channel Enhancement Mode MOSFET

Space Qualified P-Channel MOSFET from Infineon Technologies
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SKU:IRH9150
Segment:
Satellite
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-22 A
Drain Source Breakdown Voltage:
-100 V
Drain Source Resistance:
85 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
150 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-204AE
more info
IRH9230 Image
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-200 V, 35 nC, P-Channel Enhancement Mode MOSFET

Space Qualified P-Channel MOSFET from Infineon Technologies
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SKU:IRH9230
Segment:
Satellite
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-6 A
Drain Source Breakdown Voltage:
-200 V
Drain Source Resistance:
920 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-204AA
more info
IRH9250 Image
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200 V Rad-Hard P-Channel Power MOSFET

Space Qualified P-Channel MOSFET from Infineon Technologies
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SKU:IRH9250
Segment:
Satellite
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-14 A
Drain Source Breakdown Voltage:
-200 V
Drain Source Resistance:
330 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
150 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-204AE
more info
IRHE9110 Image
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-100 V, P-Channel Enhancement Mode MOSFET

Space Qualified P-Channel MOSFET from Infineon Technologies
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SKU:IRHE9110
Segment:
Satellite
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-2.3 A
Drain Source Breakdown Voltage:
-100 V
Drain Source Resistance:
1100 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
15 W
Temperature operating range:
-55 to 150 Degree C
Package:
18-pin LCC
more info
IRHE9130 Image
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-100 V, 45 nC, P-Channel Enhancement Mode MOSFET

Space Qualified P-Channel MOSFET from Infineon Technologies
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SKU:IRHE9130
Segment:
Satellite
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-6.5 A
Drain Source Breakdown Voltage:
-100 V
Drain Source Resistance:
350 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
25 W
Temperature operating range:
-55 to 150 Degree C
Package:
18-pin LCC
more info
IRHE9230 Image
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Single P-Channel Rad-Hard MOSFET

Space Qualified P-Channel MOSFET from Infineon Technologies
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SKU:IRHE9230
Segment:
Satellite
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-4 A
Drain Source Breakdown Voltage:
-200 V
Drain Source Resistance:
800 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
25 W
Temperature operating range:
-55 to 150 Degree C
Package:
18-pin LCC
more info
IRHF597110 Image
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-100 V, 11 nC, P-Channel Enhancement Mode MOSFET

Space Qualified P-Channel MOSFET from Infineon Technologies
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SKU:IRHF597110
Segment:
Satellite
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-2.6 A
Drain Source Breakdown Voltage:
-100 V
Drain Source Resistance:
1200 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
15 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-205AF
more info
IRHF597130 Image
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-100 V, P-Channel Enhancement Mode MOSFET

Space Qualified P-Channel MOSFET from Infineon Technologies
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SKU:IRHF597130
Segment:
Satellite
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-6.7 A
Drain Source Breakdown Voltage:
-100 V
Drain Source Resistance:
240 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
25 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-205AF
more info
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