Space Qualified Ceramic Diodes

130 Space Qualified Ceramic Diodes from 3 Manufacturers meet your specification.

Space Qualified Ceramic Diodes from multiple manufacturers are listed on SATNow. Use the filters to select space qualified products based on your requirement. View product details, download datasheets, compare products, get quotes and pricing for matching products. SATNow has compiled this list of products specifically for Space and Satellite Applications.

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  • Package Type: Ceramic
SKU:CDC7630
Section:
Power Diode
Types of Diode:
Schottky Barrier Diode
Forward Current:
100 mA
Forward Voltage:
135 to 240 mV
Reverse Voltage:
2 V
Temperature operating range:
-55 to 150 Degree C
Applications:
Microwave integrated circuits, Detectors
more info
SKU:CDC7631
Section:
Power Diode
Types of Diode:
Schottky Barrier Diode
Forward Current:
100 mA
Forward Voltage:
150 to 300 mV
Reverse Voltage:
2 V
Temperature operating range:
-55 to 150 Degree C
Applications:
Microwave integrated circuits, Detectors
more info
SKU:DDC2353
Section:
Power Diode
Types of Diode:
Schottky Barrier Diode
Forward Current:
100 mA
Reverse Voltage:
2 V
Temperature operating range:
-55 to 150 Degree C
Applications:
Microwave integrated circuits, Detectors
more info
SKU:DDC2354
Section:
Power Diode
Types of Diode:
Schottky Barrier Diode
Forward Current:
100 mA
Reverse Voltage:
2 V
Temperature operating range:
-55 to 150 Degree C
Applications:
Microwave integrated circuits, Detectors
more info
Description:Silicon Beam-Lead Schottky Mixer Diode, Singles, Pairs And Quads Bondable And Packaged Chips
Section:
RF Diode
Types of Diode:
Schottky Diode
Forward Voltage:
300 to 400 mV
Temperature operating range:
-65 to 175 Degree C
Applications:
Microwave integrated circuits, Mixers, Detectors
more info
Description:Silicon Beam-Lead Schottky Mixer Diode, Singles, Pairs And Quads Bondable And Packaged Chips
Section:
RF Diode
Types of Diode:
Schottky Diode
Forward Voltage:
350 to 450 mV
Temperature operating range:
-65 to 175 Degree C
Applications:
Microwave integrated circuits, Mixers, Detectors
more info
Description:Silicon Beam-Lead Schottky Mixer Diode, Singles, Pairs And Quads Bondable And Packaged Chips
Section:
RF Diode
Types of Diode:
Schottky Diode
Forward Voltage:
300 to 400 mV
Temperature operating range:
-65 to 175 Degree C
Applications:
Microwave integrated circuits, Mixers, Detectors
more info
Description:Silicon Beam-Lead Schottky Mixer Diode, Singles, Pairs And Quads Bondable And Packaged Chips
Section:
RF Diode
Types of Diode:
Schottky Diode
Forward Voltage:
300 to 400 mV
Temperature operating range:
-65 to 175 Degree C
Applications:
Microwave integrated circuits, Mixers, Detectors
more info
Description:Silicon Beam-Lead Schottky Mixer Diode, Singles, Pairs And Quads Bondable And Packaged Chips
Section:
RF Diode
Types of Diode:
Schottky Diode
Forward Voltage:
300 to 400 mV
Temperature operating range:
-65 to 175 Degree C
Applications:
Microwave integrated circuits, Mixers, Detectors
more info
SKU:DME2206
Section:
RF Diode
Types of Diode:
Schottky Diode
Forward Voltage:
325 to 425 mV
Temperature operating range:
-65 to 175 Degree C
Applications:
Microwave integrated circuits, Mixers and Detectors
more info

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Forward Current (A)

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Reverse Current (µA)

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Reverse Voltage (V)

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Repetitive Peak Reverse Voltage (V)

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Non-Repetitive Peak Forward Current (A)

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RoHS Compliant

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