Germanium Solar Cells

12 Germanium Solar Cells from 2 Manufacturers meet your specification.

Germanium Solar Cells for space applications from multiple manufacturers are listed on SATNow. Use the filters to select products based on your requirement. View product details, download datasheets, compare products, get quotes and pricing for matching products. SATNow has compiled this list of products specifically for Space and Satellite Applications.

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  • Cell Material: Ge
Description:Ultra Triple Junction Qualified for Low Earth Orbit & Geostationary Orbit
Orbit:
LEO, GEO
Cell Material:
GaInP2, InGaAs, Ge, Silicon
Output Voltage:
2.300 to 2.350 V
Power Consumption:
2000000 W
Open Circuit Voltage:
2.66 V
Number of Junction:
Triple
Mass of Cell:
84 mg/cm sq
Area:
26.6 cm sq, 59.6 cm sq
Thickness:
140 µm
Space Heritage:
Yes
more info
Description:NeXt Triple Junction Qualified for Low Earth Orbit & Geostationary Orbit
Orbit:
LEO, GEO
Cell Material:
GaInP2, InGaAs, Ge, Silicon
Output Voltage:
2.323 to 2.348 V
Power Consumption:
1000000 W
Open Circuit Voltage:
2.633 V
Number of Junction:
Triple
Mass of Cell:
84 mg/cm sq
Area:
26.6 cm sq, 59.6 cm sq, 72 cm sq
Thickness:
140 µm
Qualification Standard:
AIAA-S111-2005 and AIAA-S112-2005
Space Heritage:
Yes
more info
SKU:C4MJ
Cell Material:
GaInP2, InGaAs, Ge
Output Voltage:
2.762 V
Open Circuit Voltage:
3.125 V
Number of Junction:
Triple
Area:
30.74 mm sq, 76.05 mm sq, 86.47 mm sq, 99 mm sq
Thickness:
252 µm, 300 µm, 400 µm
Qualification Standard:
AIAA-S111 & AIAA-S112
Space Heritage:
Yes
more info
SKU:C3MJ
Cell Material:
GaInP2, InGaAs, Ge
Number of Junction:
Triple
Qualification Standard:
AIAA-S111 & AIAA-S112
Space Heritage:
Yes
more info
SKU:HNR 0005979-01-01
Cell Material:
AlInGaP, AlInGaAs, InGaAs, Ge
Output Current:
320.9 to 433.5 mA
Output Voltage:
2581 to 3025 V
Open Circuit Voltage:
2955 to 3451 V
Short Circuit Current:
365.1 to 453.3 mA
Efficiency BOL:
0.32
Number of Junction:
Quadruple
Mass of Cell:
1.78 to 2.6 gms
Area:
30.18 cm sq
Thickness:
110 to 150 µm
Dimension:
40 x 80 mm
more info
SKU:HNR 0006050-01-00
Cell Material:
InGaP, GaAs, Ge
Output Current:
427.5 to 442.8 mA
Output Voltage:
2246 to 2411 V
Open Circuit Voltage:
2522 to 2700 V
Short Circuit Current:
440.9 to 457 mA
Efficiency BOL:
0.3
Number of Junction:
Triple
Mass of Cell:
2.35 gms
Area:
26.51 cm sq
Thickness:
150 µm
Dimension:
39.55 x 68.98 mm
more info
SKU:HNR 0003429-01-01
Cell Material:
GaInP, GaAs, Ge
Output Current:
486.6 to 504.4 mA
Output Voltage:
2246 to 2411 V
Open Circuit Voltage:
2522 to 2700 V
Short Circuit Current:
501.9 to 520.2 mA
Efficiency BOL:
0.3
Number of Junction:
Triple
Mass of Cell:
86 mg/cm sq
Area:
30.18 cm sq
Thickness:
150 µm
Dimension:
40 x 80 mm
more info
SKU:HNR 0004148-00-01
Cell Material:
GaInP, GaAs, Ge
Output Current:
486.6 to 504.4 mA
Output Voltage:
2246 to 2411 V
Open Circuit Voltage:
2522 to 2700 V
Short Circuit Current:
501.9 to 520.2 mA
Efficiency BOL:
0.3
Number of Junction:
Triple
Mass of Cell:
50 mg/cm sq
Area:
30.18 cm sq
Thickness:
80 µm
Dimension:
40 x 80 mm
more info
SKU:HNR 0003384-01-02
Cell Material:
InGaP, GaAs, Ge
Output Current:
486.6 to 504.4 mA
Output Voltage:
2246 to 2411 V
Open Circuit Voltage:
2522 to 2700 V
Short Circuit Current:
501.9 to 520.2 mA
Efficiency BOL:
0.3
Number of Junction:
Triple
Mass of Cell:
86 mg/cm sq
Area:
30.18 cm sq
Thickness:
150 µm
Dimension:
40 x 80 mm
more info
SKU:HNR 0003421-01-02
Cell Material:
InGaP, GaAs, Ge
Output Current:
972 to 1007 mA
Output Voltage:
2246 to 2411 V
Open Circuit Voltage:
2522 to 2700 V
Short Circuit Current:
1004 to 1041 mA
Efficiency BOL:
0.3
Number of Junction:
Triple
Mass of Cell:
86 mg/cm sq
Area:
60.36 cm sq
Thickness:
150 µm
Dimension:
80 x 80 mm sq
more info

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