InGaAs Solar Cells

6 InGaAs Solar Cells from 3 Manufacturers meet your specification.

InGaAs Solar Cells for space applications from multiple manufacturers are listed on SATNow. Use the filters to select products based on your requirement. View product details, download datasheets, compare products, get quotes and pricing for matching products. SATNow has compiled this list of products specifically for Space and Satellite Applications.

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  • Cell Material: InGaAs
Description:3rd Generation Triple Junction (ZTJ) InGaP/InGaAs/Ge Solar Cells
Orbit:
LEO, GEO
Cell Material:
InGaP, InGaAs, Silicon
Output Voltage:
2.41 V
Power Consumption:
4000000 W
Open Circuit Voltage:
2.726 V
Efficiency BOL:
0.295
Number of Junction:
Triple
Mass of Cell:
84 mg/cm sq (300 to 600 gms)
Thickness:
4 to 8 µm
Qualification Standard:
AIAA-S111-2005, AIAA-S112-2005
Space Heritage:
Yes
more info
Description:Ultra Triple Junction Qualified for Low Earth Orbit & Geostationary Orbit
Orbit:
LEO, GEO
Cell Material:
GaInP2, InGaAs, Ge, Silicon
Output Voltage:
2.300 to 2.350 V
Power Consumption:
2000000 W
Open Circuit Voltage:
2.66 V
Number of Junction:
Triple
Mass of Cell:
84 mg/cm sq
Area:
26.6 cm sq, 59.6 cm sq
Thickness:
140 µm
Space Heritage:
Yes
more info
Description:NeXt Triple Junction Qualified for Low Earth Orbit & Geostationary Orbit
Orbit:
LEO, GEO
Cell Material:
GaInP2, InGaAs, Ge, Silicon
Output Voltage:
2.323 to 2.348 V
Power Consumption:
1000000 W
Open Circuit Voltage:
2.633 V
Number of Junction:
Triple
Mass of Cell:
84 mg/cm sq
Area:
26.6 cm sq, 59.6 cm sq, 72 cm sq
Thickness:
140 µm
Qualification Standard:
AIAA-S111-2005 and AIAA-S112-2005
Space Heritage:
Yes
more info
Description:Metamorphic Fourth Generation CPV Technology
Cell Material:
GaInP2, InGaAs, Ge
Output Voltage:
2.762 V
Open Circuit Voltage:
3.125 V
Number of Junction:
Triple
Area:
30.74 mm sq, 76.05 mm sq, 86.47 mm sq, 99 mm sq
Thickness:
252 µm, 300 µm, 400 µm
Qualification Standard:
AIAA-S111 & AIAA-S112
Space Heritage:
Yes
more info
Description:Improved CPV Technology with Fifth Generation Wafer Processing
Cell Material:
GaInP2, InGaAs, Ge
Number of Junction:
Triple
Qualification Standard:
AIAA-S111 & AIAA-S112
Space Heritage:
Yes
more info
Description:32% End-of-Life Efficiency Quadruple Junction GaAs Solar Cell
Cell Material:
AlInGaP, AlInGaAs, InGaAs, Ge
Output Current:
320.9 to 433.5 mA
Output Voltage:
2581 to 3025 V
Open Circuit Voltage:
2955 to 3451 V
Short Circuit Current:
365.1 to 453.3 mA
Efficiency BOL:
0.32
Number of Junction:
Quadruple
Mass of Cell:
1.78 to 2.6 gms
Area:
30.18 cm sq
Thickness:
110 to 150 µm
Dimension:
40 x 80 mm
more info

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