Space Qualified Solid State Relays - GaN

11 Space Qualified Solid State Relays from 1 Manufacturer meet your specification.
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  • Technology: GaN
SKU:53814
Technology:
GaN, SiC
Relay Configuration:
Magnetic Latch Relay
Switch Configuration:
SPST
Mass:
18 g
Contact Voltage:
300 V
Bias Voltage:
4.7 to 5.3 V
Command Current:
0.1 to 2 mA
Contact Current:
3 A
Bias Current:
30 to 50 mA
Leakage Current:
60 to 100 uA
Radiation:
45 kRads, 100 kRads
Power Consumption:
2 W
Contact Resistance:
0.2 to 0.45 Ohms
Dynamic Energize Time:
5 to 20 uS
Delay Time:
12 to 40 uS
Operating Temperature:
-55 to 125 Degree C
Storage Temperature:
-65 to 150 Degree C
Application:
Military, Aerospace
more info
SKU:53815
Technology:
GaN, SiC
Relay Configuration:
Magnetic Latch Relay
Switch Configuration:
SPST
Mass:
18 g
Contact Voltage:
300 V
Bias Voltage:
4.7 to 5.3 V
Command Current:
0.1 to 2 mA
Contact Current:
3 A
Bias Current:
30 to 50 mA
Leakage Current:
60 to 100 uA
Radiation:
45 kRads, 100 kRads
Power Consumption:
2 W
Contact Resistance:
0.2 to 0.45 Ohms
Dynamic Energize Time:
5 to 20 uS
Delay Time:
12 to 40 uS
Operating Temperature:
-55 to 125 Degree C
Storage Temperature:
-65 to 150 Degree C
Application:
Military, Aerospace
more info
SKU:53807
Technology:
GaN, SiC
Relay Configuration:
Magnetic Latch Relay
Switch Configuration:
SPST
Mass:
30 g
Contact Voltage:
300 V
Bias Voltage:
4.7 to 5.3 V
Command Current:
0.1 to 2 mA
Contact Current:
5 A
Bias Current:
30 to 50 mA
Leakage Current:
60 to 100 uA
Radiation:
45 kRads, 100 kRads
Power Consumption:
4 W
Contact Resistance:
0.15 to 0.5 Ohms
Dynamic Energize Time:
5 to 30 uS
Delay Time:
12 to 40 uS
Operating Temperature:
-55 to 125 Degree C
Storage Temperature:
-65 to 150 Degree C
Application:
Military, Aerospace
more info
SKU:53808
Technology:
GaN, SiC
Relay Configuration:
Magnetic Latch Relay
Switch Configuration:
SPST
Mass:
30 g
Contact Voltage:
50 V
Bias Voltage:
4.7 to 5.3 V
Command Current:
0.1 to 2 mA
Contact Current:
10 A
Bias Current:
30 to 50 mA
Leakage Current:
60 to 100 uA
Radiation:
45 kRads, 100 kRads
Power Consumption:
4 W
Contact Resistance:
0.075 to 0.2 Ohms
Dynamic Energize Time:
5 to 30 uS
Delay Time:
12 to 40 uS
Operating Temperature:
-55 to 125 Degree C
Storage Temperature:
-65 to 150 Degree C
Application:
Military, Aerospace
more info
SKU:53819
Technology:
GaN
Relay Configuration:
Magnetic Latch Relay
Switch Configuration:
SPST
Mass:
32 g
Contact Voltage:
300 V
Bias Voltage:
4.7 to 5.3 V
Command Current:
1 to 3 mA
Contact Current:
5 A
Bias Current:
30 to 50 mA
Leakage Current:
30 to 50 uA
Radiation:
45 kRads, 100 kRads
Power Consumption:
8 W
Contact Resistance:
0.3 to 0.8 Ohms
Dynamic Energize Time:
10 to 20 uS
Delay Time:
5 to 20 uS
Operating Temperature:
-55 to 125 Degree C
Storage Temperature:
-65 to 150 Degree C
Application:
Military, Aerospace
more info
SKU:53817
Technology:
GaN, SiC
Relay Configuration:
Magnetic Latch Relay
Mass:
32 g
Contact Voltage:
300 V
Bias Voltage:
4.7 to 5.3 V
Contact Current:
5 A
DC Coil Current:
3 to 7 mA
Bias Current:
30 to 50 mA
Leakage Current:
60 to 100 uA
Radiation:
45 kRads, 100 kRads
Power Consumption:
10 W
Contact Resistance:
0.15 to 0.2 Ohms
Dynamic Energize Time:
5 to 20 uS
Delay Time:
12 to 40 uS
Operating Temperature:
-55 to 125 Degree C
Storage Temperature:
-65 to 150 Degree C
Application:
Military, Aerospace
more info
SKU:53818
Technology:
GaN, SiC
Relay Configuration:
Magnetic Latch Relay
Mass:
32 g
Contact Voltage:
600 V
Bias Voltage:
4.7 to 5.3 V
Contact Current:
10 A
DC Coil Current:
3 to 7 mA
Bias Current:
30 to 50 mA
Leakage Current:
60 to 100 uA
Radiation:
45 kRads, 100 kRads
Power Consumption:
10 W
Contact Resistance:
0.75 to 0.2 Ohms
Dynamic Energize Time:
5 to 20 uS
Delay Time:
12 to 40 uS
Operating Temperature:
-55 to 125 Degree C
Storage Temperature:
-65 to 150 Degree C
Application:
Military, Aerospace
more info
SKU:53821
Technology:
GaN, SiC
Relay Configuration:
Magnetic Latch Relay
Switch Configuration:
SPST
Mass:
50 g
Contact Voltage:
300 V
Bias Voltage:
4.7 to 5.3 V
Command Current:
1 to 3 mA
Contact Current:
15 A
Bias Current:
30 to 50 mA
Leakage Current:
60 to 100 uA
Radiation:
45 kRads, 100 kRads
Power Consumption:
20 W
Contact Resistance:
0.08 to 0.2 Ohms
Dynamic Energize Time:
10 to 20 uS
Delay Time:
5 to 20 uS
Operating Temperature:
-55 to 125 Degree C
Storage Temperature:
-65 to 150 Degree C
Application:
Military, Aerospace
more info
SKU:53822
Technology:
GaN, SiC
Relay Configuration:
Magnetic Latch Relay
Switch Configuration:
SPST
Mass:
60 g
Contact Voltage:
300 V
Bias Voltage:
4.7 to 5.3 V
Command Current:
1 to 3 mA
Contact Current:
25 A
Bias Current:
30 to 50 mA
Leakage Current:
60 to 100 uA
Radiation:
45 kRads, 100 kRads
Power Consumption:
30 W
Contact Resistance:
0.04 to 0.1 Ohms
Dynamic Energize Time:
10 to 20 uS
Delay Time:
5 to 20 uS
Operating Temperature:
-55 to 125 Degree C
Storage Temperature:
-65 to 150 Degree C
Application:
Military, Aerospace
more info
SKU:53802
Technology:
GaN, SiC
Relay Configuration:
Magnetic Latch Relay
Switch Configuration:
SPST
Mass:
32 g
Contact Voltage:
600 V
Bias Voltage:
4.7 to 5.3 V
Command Current:
0.1 to 2 mA
Contact Current:
20 A
Bias Current:
100 to 200 mA
Leakage Current:
60 to 100 uA
Radiation:
45 kRads, 100 kRads
Power Consumption:
10 W
Contact Resistance:
0.075 to 0.2 Ohms
Dynamic Energize Time:
5 to 30 uS
Delay Time:
20 to 75 uS
Operating Temperature:
-55 to 125 Degree C
Storage Temperature:
-65 to 150 Degree C
Application:
Military, Aerospace
more info

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