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GaN Power Transistors for Space Applications

17 GaN Power Transistors for Space Applications from 3 manufacturers listed on SatNow

GaN Transistors for space applications from multiple manufacturers are listed on SATNow. Use the filters to select products based on your requirement. View product details, download datasheets, compare products, get quotes and pricing for matching products. SATNow has compiled this list of products specifically for Space and Satellite Applications.

Description:200 V, 4 A, GaN Power Transistor
Segment:
Satellite
Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.8 V
Drain Source Voltage:
200 V
Drain Source Resistance:
68 to 130 milli-ohm
Continous Drain Current:
4 A
Pulsed Drain Current:
16 A
Total Charge:
1.6 to 3 nC
Input Capacitance:
106 to 150 pF
Output Capacitance:
72 to 90 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Surface Mount
Dimensions:
3.4 x 3.4 mm
more info
Description:300 V, 4 A, GaN Power Transistor
Segment:
Satellite
Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.8 V
Drain Source Voltage:
300 V
Drain Source Resistance:
210 to 400 milli-ohm
Continous Drain Current:
4 A
Pulsed Drain Current:
12 A
Total Charge:
1.6 to 2.6 nC
Input Capacitance:
380 to 450 pF
Output Capacitance:
48 to 60 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Surface Mount
Dimensions:
4.4 x 4.4 mm
more info
Description:100V, 60A Enhancement Mode GaN Power Transistor
Segment:
Ground
Configuration:
Single
Gate Threshold Voltage:
0.7 to 3 V
Drain Source Voltage:
100 V
Drain Source Resistance:
5 to 12 milli-ohm
Continous Drain Current:
60 A
Total Charge:
14 to 25 nC
Input Capacitance:
1500 pF
Output Capacitance:
960 to 1250 pF
Temperature operating range:
-55 to 125 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Dimensions:
6050µm x 2300µm (238.19 mils x 90.55 mils) Thickne...
more info
Description:60 V, 1 A, GaN Power Transistor
Segment:
Satellite
Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
60 V
Drain Source Resistance:
340 to 580 milli-ohm
Continous Drain Current:
1 A
Pulsed Drain Current:
4 A
Total Charge:
0.142 to 0.184 nC
Input Capacitance:
16 to 22 pF
Output Capacitance:
0.1 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Surface Mount
Dimensions:
3.25 x 2.74 mm
more info
Description:GaN Power Transistor for Deep Space Applications
Segment:
Satellite
Gate Threshold Voltage:
800 to 2500 mV
Drain Source Voltage:
40 V
Drain Source Resistance:
1.2 to 1.5 milli-ohm
Continous Drain Current:
95 A
Pulsed Drain Current:
530 A
Total Charge:
22 nC
Input Capacitance:
2830 pF
Output Capacitance:
1660 pF
Temperature operating range:
-55 to 150 degree C
Package Type:
Die
Dimensions:
6.05 x 2.3 mm
more info
Description:200 V, 18 A, GaN Power Transistor
Segment:
Satellite
Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
200 V
Drain Source Resistance:
21 to 28 milli-ohm
Continous Drain Current:
18 A
Pulsed Drain Current:
72 A
Total Charge:
5 to 7 nC
Input Capacitance:
637 to 900 pF
Output Capacitance:
300 to 359 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Surface Mount
Dimensions:
5.7 x 3.9 mm
more info
Description:40 V GaN Power Transistor for Space Applications
Segment:
Satellite
Configuration:
Dual
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
40 V
Drain Source Resistance:
3.7 milliohm
Continous Drain Current:
95 A
Pulsed Drain Current:
530 A
Total Charge:
22 nC
Input Capacitance:
2830 pF
Output Capacitance:
1660 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Surface Mount
Dimensions:
8.0 x 5.6 mm
more info
Description:65 A Enhancement Mode GaN Power Transistor
Segment:
Ground
Configuration:
Single
Gate Threshold Voltage:
0.7 to 2.5 V
Drain Source Voltage:
40 V
Drain Source Resistance:
1.2 to 8 milli-ohm
Continous Drain Current:
65 A
Total Charge:
19 to 25 nC
Input Capacitance:
1920 pF
Output Capacitance:
1620 to 2430 pF
Temperature operating range:
-55 to 125 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Dimensions:
6050µm x 2300µm (238.19 mils x 90.55 mils) Thickne...
more info
Description:40V, 65A Enhancement Mode GaN Power Transistors
Segment:
Ground
Configuration:
Single
Gate Threshold Voltage:
0.7 to 2.5 V
Drain Source Voltage:
40 V
Drain Source Resistance:
1.2 to 8 milli-ohm
Continous Drain Current:
65 A
Total Charge:
19 to 25 nC
Input Capacitance:
1920 pF
Output Capacitance:
1620 to 2430 pF
Temperature operating range:
-55 to 125 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Dimensions:
6050µm x 2300µm (238.19 mils x 90.55 mils) Thickne...
more info
Description:40 V, 8 A, GaN Power Transistor
Segment:
Satellite
Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
40 V
Drain Source Resistance:
24 to 28 milli-ohm
Continous Drain Current:
8 A
Pulsed Drain Current:
32 A
Total Charge:
2.2 to 2.8 nC
Input Capacitance:
283 to 312 pF
Output Capacitance:
170 to 270 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Surface Mount
Dimensions:
3.4 x 3.4 mm
more info


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Pulsed Drain Current (A)

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Total Charge (nC)

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RoHS Compliant

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