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GaN Power Transistors for Space Applications

17 GaN Power Transistors for Space Applications from 3 manufacturers listed on SatNow
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GaN Power Transistors for space applications from multiple manufacturers are listed on SATNow. Use the filters to select products based on your requirement. View product details, download datasheets, compare products, get quotes and pricing for matching products. SATNow has compiled this list of products specifically for Space and Satellite Applications.

FBG20N04A Image
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200 V Radiation Hard GaN HEMT for Deep Space Applications

GaN Power Transistor from EPC Space
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SKU:FBG20N04A
Segment:
Satellite
Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.8 V
Drain Source Voltage:
200 V
Drain Source Resistance:
68 to 130 milli-ohm
Continous Drain Current:
4 A
Pulsed Drain Current:
16 A
Total Charge:
1.6 to 3 nC
Input Capacitance:
106 to 150 pF
Output Capacitance:
72 to 90 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Surface Mount
Dimensions:
3.4 x 3.4 mm
more info
FBG30N04C Image
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EPC Space - FBG30N04C

GaN Power Transistor from EPC Space
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Description:Rad Hard eGaN HEMT for Commercial Satellite EPS & Avionics Applications
Segment:
Satellite
Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.8 V
Drain Source Voltage:
300 V
Drain Source Resistance:
210 to 400 milli-ohm
Continous Drain Current:
4 A
Pulsed Drain Current:
12 A
Total Charge:
1.6 to 2.6 nC
Input Capacitance:
380 to 450 pF
Output Capacitance:
48 to 60 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Surface Mount
Dimensions:
4.4 x 4.4 mm
more info
ISL70023SEH Image
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100 V Enhancement Mode GaN Power Transistor

GaN Power Transistor from Renesas
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SKU:ISL70023SEH
Segment:
Ground
Configuration:
Single
Gate Threshold Voltage:
0.7 to 3 V
Drain Source Voltage:
100 V
Drain Source Resistance:
5 to 12 milli-ohm
Continous Drain Current:
60 A
Total Charge:
14 to 25 nC
Input Capacitance:
1500 pF
Output Capacitance:
960 to 1250 pF
Temperature operating range:
-55 to 125 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Dimensions:
6050µm x 2300µm (238.19 mils x 90.55 mils) Thickness: 685µm (26.97 mils)
more info
EPC7014UB Image
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Rad Hard e-GaN HEMT for Commercial Satellite Space Environments

GaN Power Transistor from EPC Space
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SKU:EPC7014UB
Segment:
Satellite
Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
60 V
Drain Source Resistance:
340 to 580 milli-ohm
Continous Drain Current:
1 A
Pulsed Drain Current:
4 A
Total Charge:
0.142 to 0.184 nC
Input Capacitance:
16 to 22 pF
Output Capacitance:
0.1 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Surface Mount
Dimensions:
3.25 x 2.74 mm
more info
EPC7019 Image
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Rad Hard GaN Power Transistor for Deep Space Applications

GaN Power Transistor from Efficient Power Conversion
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SKU:EPC7019
Segment:
Satellite
Gate Threshold Voltage:
800 to 2500 mV
Drain Source Voltage:
40 V
Drain Source Resistance:
1.2 to 1.5 milli-ohm
Continous Drain Current:
95 A
Pulsed Drain Current:
530 A
Total Charge:
22 nC
Input Capacitance:
2830 pF
Output Capacitance:
1660 pF
Temperature operating range:
-55 to 150 degree C
Package Type:
Die
Dimensions:
6.05 x 2.3 mm
more info
FBG20N18B Image
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200 V Rad Hard e-GaN HEMT for Satellite and Avionics Applications

GaN Power Transistor from EPC Space
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SKU:FBG20N18B
Segment:
Satellite
Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
200 V
Drain Source Resistance:
21 to 28 milli-ohm
Continous Drain Current:
18 A
Pulsed Drain Current:
72 A
Total Charge:
5 to 7 nC
Input Capacitance:
637 to 900 pF
Output Capacitance:
300 to 359 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Surface Mount
Dimensions:
5.7 x 3.9 mm
more info
EPC7019G Image
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40 V eGaN HEMT for Commercial Satellite Applications

GaN Power Transistor from EPC Space
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SKU:EPC7019G
Segment:
Satellite
Configuration:
Dual
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
40 V
Drain Source Resistance:
3.7 milliohm
Continous Drain Current:
95 A
Pulsed Drain Current:
530 A
Total Charge:
22 nC
Input Capacitance:
2830 pF
Output Capacitance:
1660 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Surface Mount
Dimensions:
8.0 x 5.6 mm
more info
ISL70020SEH Image
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Renesas - ISL70020SEH

GaN Power Transistor from Renesas
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Description:65 A Enhancement Mode GaN Power Transistor for Commercial Aerospace Applications
Segment:
Ground
Configuration:
Single
Gate Threshold Voltage:
0.7 to 2.5 V
Drain Source Voltage:
40 V
Drain Source Resistance:
1.2 to 8 milli-ohm
Continous Drain Current:
65 A
Total Charge:
19 to 25 nC
Input Capacitance:
1920 pF
Output Capacitance:
1620 to 2430 pF
Temperature operating range:
-55 to 125 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Dimensions:
6050µm x 2300µm (238.19 mils x 90.55 mils) Thickness: 685µm (26.97 mils)
more info
ISL73020SEH Image
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40 V Enhancement Mode GaN Power Transistor

GaN Power Transistor from Renesas
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SKU:ISL73020SEH
Segment:
Ground
Configuration:
Single
Gate Threshold Voltage:
0.7 to 2.5 V
Drain Source Voltage:
40 V
Drain Source Resistance:
1.2 to 8 milli-ohm
Continous Drain Current:
65 A
Total Charge:
19 to 25 nC
Input Capacitance:
1920 pF
Output Capacitance:
1620 to 2430 pF
Temperature operating range:
-55 to 125 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Dimensions:
6050µm x 2300µm (238.19 mils x 90.55 mils) Thickness: 685µm (26.97 mils)
more info
FBG04N08A Image
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40 V Radiation Hardened GaN Transistor

GaN Power Transistor from EPC Space
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SKU:FBG04N08A
Segment:
Satellite
Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
40 V
Drain Source Resistance:
24 to 28 milli-ohm
Continous Drain Current:
8 A
Pulsed Drain Current:
32 A
Total Charge:
2.2 to 2.8 nC
Input Capacitance:
283 to 312 pF
Output Capacitance:
170 to 270 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Surface Mount
Dimensions:
3.42 x 3.42 mm
more info
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