These products can be used in Satellites

Space Qualified MOSFETs

312 Space Qualified MOSFETs for Space Applications from 4 manufacturers listed on SatNow

MOSFETs for space applications from multiple manufacturers are listed on SATNow. Use the filters to select space qualified MOSFET products based on your requirement. View product details, download datasheets, compare products, get quotes and pricing for matching products. SATNow has compiled this list of products specifically for Space and Satellite Applications.

Description:100 V Combination 2N-2P Channel Radiation Hardened Power MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Quad
Continous Drain Current:
-0.96 to 1.6 A
Drain Source Breakdown Voltage:
-100 to 100 V
Drain Source Resistance:
290 to 690 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.4 W
Temperature operating range:
-55 to 150 Degree C
Package:
MO-036AB
more info
Description:250 V N-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
12.4 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
210 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD.5
more info
Description:50 V N-Channel MOSFET for Power Management Applications
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.2 A
Drain Source Breakdown Voltage:
50 V
Drain Source Resistance:
10000 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.225 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23-3
more info
Description:100 V Rad Hard N-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
48 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
63 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
170 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA
more info
Description:100 V, N-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Quad
Continous Drain Current:
1.8 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
290 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.4 W
Temperature operating range:
-55 to 150 Degree C
Package:
MO-036AB
more info
Description:AEC-Q101 Qualified P-Channel Enhancement MOSFET
Segment:
Satellite
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-0.13 A
Drain Source Breakdown Voltage:
-50 V
Drain Source Resistance:
10000 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.225 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23-3
more info
Description:60 V, N-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
40 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
24 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
176 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA
more info
Description:-100 V, P-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Quad
Continous Drain Current:
-0.96 A
Drain Source Breakdown Voltage:
-100 V
Drain Source Resistance:
960 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.4 W
Temperature operating range:
-55 to 150 Degree C
Package:
MO-036AB
more info
Description:2.5 V N-Channel MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.115 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
7500 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.3 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23-3
more info
Description:100 V, P-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
12 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
300 milliohm
Gate Source Voltage:
-18 to 18 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-257
more info


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